Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process

Colinet, Éric; Durand, C.; Duraffourg, Laurent; Audebert, P.; Dumas, Guillaume; Casset, F.; Ollier, E.; Ancey, P.; Carpentier, J.F.; Buchaillot, L.; Ionescu, A. M.

doi:10.1109/jssc.2008.2007448

Cited by 31 publications

(17 citation statements)

References 14 publications

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“…Top-down SiNWs have also been explored, because the device can be fabricated with 8 inch wafer-scale silicon-on-insulator (SOI) technology with high yield and uniformity, facilitating very-large-scale integration (VLSI) of SiNW NEMS and co-integration with CMOS, toward a number of on-chip SiNW switching and sensing applications. SiNW NEMS resonators have shown high performance for sensing, using either the piezoresistive effect or field effect [13,14]. SiNW also has great potential for NEMS switch applications, and we have previously demonstrated initial characterization of SiNW NEMS switches [15].…”

Section: Journal Of Micromechanics and Microengineeringmentioning

confidence: 99%

Probing contact-mode characteristics of silicon nanowire electromechanical systems with embedded piezoresistive transducers

Yang

Tupta³

et al. 2015

J. Micromech. Microeng.

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This article reports on a new method of monitoring nanoscale contacts in switches based on nanoelectromechanical systems, where the contact-mode switching characteristics can be recorded with the sensitive embedded piezoresistive (PZR) strain transducers. The devices are manufactured using state-of-the-art wafer-scale silicon-on-insulator technology featuring suspended silicon cantilevers and beams as switching elements and sub-100 nm thin silicon nanowires (SiNWs) as PZR transducers. Several different device configurations are studied, including mechanically 'cross'-shaped ('+'), coupled cantilever-SiNW structures, with and without local drain electrodes, and doubly clamped SiNW beams. Through detailed measurement and analysis, we demonstrate that the PZR transducers can enable detection of both mechanical and tunneling switching with multiple repeatable cycles. With the strong PZR effects in thin SiNWs, this type of device could be valuable especially for monitoring cold switching events, and when conventional direct readout of the switching events from the local gate or drain electrodes would not be efficient or sensitive, as nanoscale contacts may not be highly conductive, or may be degrading over time.

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Section: Journal Of Micromechanics and Microengineeringmentioning

confidence: 99%

Probing contact-mode characteristics of silicon nanowire electromechanical systems with embedded piezoresistive transducers

Yang

Tupta³

et al. 2015

J. Micromech. Microeng.

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“…Therefore, the intrinsic frequency of the resonator can be characterized in accordance to the current signal. Compared with the conventional capacitive MEMS resonators, SGFETRs present many merits in terms of operating voltage, process compatibility and signal manipulation [12].…”

Section: Mems Resonatormentioning

confidence: 99%

Micro-Raman spectroscopy analysis of residual stress in polysilicon MEMS resonators

Zhao

Liu

2013

The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems

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This paper presents the recent results of utilization of micro-Raman spectroscopy to measure and characterize residual stress in polysilicon doubly-clamped MEMS resonators with small lateral size. Due to imprecise prediction of the magnitude of intrinsic residual stress, detrimental effect of the residual stress severely shifts the resonant frequency of MEMS resonator from the analytical pre-designed value. The stress is not only determined by the fabrication process but also related to the structural dimensions of resonators. In this work, micro-Raman spectroscopy was used to measure the residual stress of resonators with widths down to 2µm. The results show that the optimized resonator with length shorter than 50µm and width between 3.2µm and 4.1µm exhibits minimum residual stress.

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“…The transmission line and contact pads between the structure and the control electronics give rise to a parasitic capacitance p C , typically on the order of several pF, which is much larger than the nominal capacitance of the structure (on the order of 1fF) and leads to poor SNR [13]. At the output of the charge amplifier, the voltage out V can be written:…”

Section: Description Of the Accelerometer Sensing Cellmentioning

confidence: 99%

Large amplitude dynamics of micro-/nanomechanical resonators actuated with electrostatic pulses

Jerome

Bonnoit

Avignon

et al. 2010

Journal of Applied Physics

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Abstract. In the field of resonant NEMS design, it is a common misconception that large-amplitude motion, and thus large signal-to-noise ratio, can only be achieved at the risk of oscillator instability. In the present paper, we show that very simple closed-loop control schemes can be used to achieve stable largeamplitude motion of a resonant structure, even when jump resonance (caused by electrostatic softening or Duffing hardening) is present in its frequency response. We focus on the case of a resonant accelerometer sensing cell, consisting in a nonlinear clamped-clamped beam with electrostatic actuation and detection, maintained in an oscillation state with pulses of electrostatic force that are delivered whenever the detected signal (the position of the beam) crosses zero. We show that the proposed feedback scheme ensures the stability of the motion of the beam much beyond the critical Duffing amplitude and that, if the parameters of the beam are correctly chosen, one can achieve almost full-gap travel range without incurring electrostatic pull-in. These results are illustrated and validated with transient simulations of the nonlinear closed-loop system. 2 1. Introduction Resonant sensing consists in measuring the frequency shift of a system subject to the variation of a given physical quantity. Because of its moderate complexity, this measurement technique is becoming commonplace in the context of MEMS and NEMS devices [1][2][3]. This paper focuses on closed-loop resonant sensors, where the micromechanical structure is brought to oscillate by being placed inside a feedback loop [4][5][6]. In the present work, the structure is a clamped-clamped beam, the motion of which is sensed capacitively. It is maintained in an oscillation state with pulses of electrostatic force that are delivered whenever the detected signal (the position of the beam) crosses zero [7][8]. In order to maximize the signal-to-noise ratio (SNR) and, thus, to relax the constraints on the electronic design, the detected signal must be as large as possible, which means that, for a given set of structural parameters and a given bias voltage, the oscillation amplitude of the resonant beam must also be as large as possible. This raises questions concerning what oscillation amplitude can be sustained without incurring mechanical [9-10] or electrostatic [11][12] instability. We show in this paper that, in spite of the nonlinearities, the proposed feedback scheme ensures the stability of the motion of the beam much beyond the critical Duffing amplitude. We also show that, if the parameters of the beam are correctly chosen, one can realistically achieve almost full-gap travel range without incurring electrostatic pull-in. In section 2, the sensing cell of the resonant accelerometer that is the basis of our work is briefly described. The focus is brought on the capacitive detection and actuation schemes. In section 3, a simplified one-degree-offreedom (1-DOF) model of the beam is derived. In particular, an approximate expression of the first modal ...

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Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process

Cited by 31 publications

References 14 publications

Probing contact-mode characteristics of silicon nanowire electromechanical systems with embedded piezoresistive transducers

Probing contact-mode characteristics of silicon nanowire electromechanical systems with embedded piezoresistive transducers

Micro-Raman spectroscopy analysis of residual stress in polysilicon MEMS resonators

Large amplitude dynamics of micro-/nanomechanical resonators actuated with electrostatic pulses

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