Ultra-narrow-linewidth, single-frequency distributed feedback waveguide laser in Al_2O_3:Er^3+ on silicon

Bernhardi, E.H.; Wolferen, H.A.G.M. van; Agazzi, L.; Khan, M. R. H.; Roeloffzen, C.G.H.; Wörhoff, Kerstin; Pollnau, Markus; Ridder, R.M. de

doi:10.1364/ol.35.002394

Cited by 131 publications

(94 citation statements)

References 16 publications

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“…The detail process of fabricating the waveguide is explained in [14]. In order to realize the two required quarter-wavelength phase shifts, two sections with 2 mm long adiabatic sinusoidal widening of the waveguide width are fabricated [20]. The two quarterwavelength phase shifts are centered at 4.5 mm and 6.5 mm respectively (as measured from the pumped end facet of the 1 cm long cavity).…”

Section: Dual Frequency Laser Characteristicmentioning

confidence: 99%

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Carrier generation using a dual-frequency distributed feedback waveguide laser for phased array antenna (PAA)

Khan

Islam

Sarowar

et al. 2017

J. Eur. Opt. Soc.-Rapid Publ.

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Background: Carrier generation based on optical heterodyning techniques where a beat signal is generated from the mixing of two light sources can be interesting solution due to ease on tunability. The free running heterodyning scheme benefits with a very wide tuning capability and the generated carrier can be freely adjusted. However, the drawbacks come in the form of frequency stability. Heterodyning of two optical frequencies coming from a single laser cavity has shown its potential on improvement of frequency stability. Methods: The impact of the laser parameters (i.e., optical power and linewidth) on the quality of the generated carrier (i.e., phase/frequency stability and carrier-to-noise ratio) is analyzed for a 25 × 64 elements PAA system. An optically generated carrier signal using a dual-frequency distributed feedback waveguide laser in ytterbium doped aluminum oxide (Al 2 O 3 :Yb 3+ ) is analyzed and experimentally demonstrated in this paper. The carrier signal is used for downconversion of the signal received from a phased array antenna (PAA) of a DVB-S (Digital Video Broadcasting-Satellite) system. Results: An optical frequency locked loop (OFLL) to stabilize the generated carrier is implemented which results in a microwave frequency at ∼14 GHz with a phase noise of -75 dBc/Hz at 1 MHz offset from the center frequency and gives a loop settling time of 12 μs. By using the proposed OFLL, the long term and the short term frequency stability of the generated carrier has an Allan deviation of more than 1 × 10 −10 for an averaging time of 1000 s and a standard deviation of 39.4 kHz, respectively. The lasers linewidth should be in the order of tens of Hz, with a maximum relative intensity noise (RIN) of -107 dB/Hz and a minimum optical power of 0.94 mW. Conclusions: The optical carrier generation by OFLL using a DFL to comply with the requirements of the standard carrier used in commercial LNBs has been investigated. The detailed analysis of the OFLL scheme is presented. Specifications requirement on carrier power, linewidth and relative intensity noise of the optically generated carrier have been addressed. The optical carrier generation is experimentally demonstrated and the requirements on CNR have been determined by measuring the noise floor and the optical carrier power. The measured values are compared with the calculated values and found to be very close.

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Section: Dual Frequency Laser Characteristicmentioning

confidence: 99%

“…4a. The operating wavelength of the DFL could be shifted to 1550 nm or 1330 nm by using different doping material as demonstrated in [20].…”

Section: Dual Frequency Laser Characteristicmentioning

confidence: 99%

Carrier generation using a dual-frequency distributed feedback waveguide laser for phased array antenna (PAA)

Khan

Islam

Sarowar

et al. 2017

J. Eur. Opt. Soc.-Rapid Publ.

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“…Several methods have been developed to realize on-chip lasers, including germanium-on-silicon lasers [1], III-V hybrid lasers [2,3], and erbium-doped glass lasers [4,5]. Of these approaches, only erbium-doped glass lasers have been shown to achieve both ultra-narrow linewidth [4] and CMOScompatibility [3].…”

Section: Introductionmentioning

confidence: 99%

“…In particular, silicon nitride based waveguides provide robust, low-loss and compact devices for a wide range of optical wavelengths [6,7]. Erbium laser resonators have been demonstrated by patterning silicon nitride structures beneath the erbium host material (Al 2 O 3 ) to form an inverted ridge waveguide [4,5]. In a traditional waveguide design, the relatively high index contrast of these materials ( Al O n = 1.65) requires that the silicon nitride layer be very thin so that the mode overlaps strongly with the gain medium.…”

Section: Introductionmentioning

confidence: 99%

Erbium-Doped Laser with Multi-segmented Silicon Nitride Structure

Purnawirman

Hosseini

Baldycheva

et al. 2014

Optical Fiber Communication Conference

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“…In contrast, when operating SOAs in a saturated or quasi-saturated gain regime, eye closure occurs, because their carrier lifetime of typically 100 ps causes transient gain suppression and recovery depending on bit rate and sequence [16]. Furthermore, laser linewidths of free-running single-longitudinal-mode distributed-feedback (DFB) lasers as narrow as 1.7 kHz have been demonstrated in RE-doped materials [17,18], while the typical linewidth of commercially available III-V DFB lasers ranges from 1 to 10 MHz [19,20]. Last but not least, operation of SOAs is more strongly influenced by temperature than their dielectric counterparts [13].…”

Section: Introductionmentioning

confidence: 99%

Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides

Agazzi¹,

Bradley²,

Dijkstra³

et al. 2010

Opt. Express

100

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Monolithic integration of Al 2 O 3 :Er 3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive cosputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.

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Ultra-narrow-linewidth, single-frequency distributed feedback waveguide laser in Al_2O_3:Er^3+ on silicon

Cited by 131 publications

References 16 publications

Carrier generation using a dual-frequency distributed feedback waveguide laser for phased array antenna (PAA)

Carrier generation using a dual-frequency distributed feedback waveguide laser for phased array antenna (PAA)

Erbium-Doped Laser with Multi-segmented Silicon Nitride Structure

Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides

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