2020
DOI: 10.1016/j.mee.2020.111253
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Ultra miniaturized InterDigitated electrodes platform for sensing applications

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Cited by 15 publications
(11 citation statements)
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“…, Δ C / C 0 per unit of concentration change in the atmosphere) is proportional to the change in capacitance due to adsorption (Δ C ) normalized to the initial capacitance ( C 0 ), IDE sensors exhibit a lower sensitivity than MIM sensors. For example, finite element modeling revealed that even in the best-case scenario (a very small 200 nm electrode gap and a thick 5 μm sensing layer), IDE-type sensors reach only 25% of the sensitivity of MIM capacitors …”
Section: Resultsmentioning
confidence: 99%
“…, Δ C / C 0 per unit of concentration change in the atmosphere) is proportional to the change in capacitance due to adsorption (Δ C ) normalized to the initial capacitance ( C 0 ), IDE sensors exhibit a lower sensitivity than MIM sensors. For example, finite element modeling revealed that even in the best-case scenario (a very small 200 nm electrode gap and a thick 5 μm sensing layer), IDE-type sensors reach only 25% of the sensitivity of MIM capacitors …”
Section: Resultsmentioning
confidence: 99%
“…By embedding the electrodes in the MOF, rather than growing the MOF over surface‐anchored electrodes, the parasitic contribution of the substrate to the measured capacitance was eliminated, enabling a low C 0 value (Figure S13, Supporting Information). [ 40 ] As a result, changes induced by analyte adsorption in the MOF crystal can be detected with a higher sensitivity (vide infra). Figure 4b shows optical microscopy images of the resulting sensor, demonstrating a non‐defective HKUST‐1 single crystal from the bottom view and the surface‐embedded interdigitated electrode on the single crystal from the top view.…”
Section: Resultsmentioning
confidence: 99%
“…The design of electrodes is chosen as interdigitated [50] to have a sensitivity gain for gas sensing applications. [51] Parylene-C was deposited using the chemical vapor deposition process for the passivation of IGZO TFT to use it as an n-type TFT. Parylene-C is chemically compatible with the IGZO TFT and provided conformal deposition.…”
Section: Igzo Thin-film Transistor Devicesmentioning
confidence: 99%