Ultra‐Low Voltage and Ultra‐Low Power Consumption Nonvolatile Operation of a Three‐Terminal Atomic Switch

Abstract

Nonvolatile three-terminal operation, with a very small range of bias sweeping (-80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (<1 pA), is demonstrated using an Ag (gate)/Ta2 O5 (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure.

Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications

“…This is due to the time-dependent reset dynamics, where a higher local T inj , hence a higher V reset , is needed to trigger ionic migration within a shorter time according to the Arrhenius law in Eqs. (9) and (10). The analytical simulations in Fig.…”

“…7, namely, set transition evolves via the growth of CF diameter φ within the depleted gap region (a), whereas reset transition occurs by the gradual increase of the depleted gap length (b). Formally, the rate equations for φ and resemble the drift/diffusion equations governing the continuous FEM modeling of RRAM [30], namely: (9) for set transition, where A is a pre-exponential constant, E A is a voltage dependent energy barrier for migration, and T inj is the local temperature at the injecting CF tip, namely the one with positive potential. A similar rate equation was assumed for reset transition, namely:…”

“…RRAM offers a simple structure, CMOS compatibility, back-end of the line (BEOL) process, high speed and low power consumption. Given the large number of switching materials and their possible combination in MIM stacks [3], multilayers [8], and multi-terminal structures [9], RRAM offers an unprecedented flexibility to serve different demands of memory, storage and computing.…”

Structurally Engineered Nanoporous Ta2O5–x Selector-Less Memristor for High Uniformity and Low Power Consumption

“…The design and fabrication of electronic memory devices for ultralow power consumption have become a key issue in modern electronic device applications because of the enormous demand for big data storage, Internet of Things applications, and the perpetual power-consuming nature of organized information in communication networks. ,,− Figure c,d shows the statistical analysis of the ON power ( P ON ) with a logarithmic scale for the NP Ta 2 O 5– x memristor devices fabricated under different anodization conditions (∼25 individual devices for each condition). When the anodization time and the applied dc voltage were increased, the P ON ( V set × I ) changed from ∼5.43 × 10 –4 to ∼0.96 × 10 –5 W due to the porosity dependence of the switching current; this change is much lower than that of other nonporous metal-oxide memories by a factor of up to ∼10 4 , which indicates its potential use in ultralow power memory applications (Figure e, Tables S1 and S2, Supporting information) .…”

Atomic Insight into the Origin of Various Operation Voltages of Cation-Based Resistance Switches

“…Among all the cation-based resistance switches, the devices with Ta 2 O 5 as the insulator layer (such as Ag/Ta 2 O 5 /Pt and Cu/Ta 2 O 5 /Pt) have been widely studied due to their excellent performances. , According to the recent experimental studies, − the most accepted rate-limiting steps during the switching processes of cation-based resistance switches could be simply described as follows: (i) the ionization of metal atoms (such as Ag or Cu) at the interface region between oxidizable electrode and insulator layer; (ii) the diffusion of the as-generated metal ions toward the inert electrode under the applied bias voltage; (iii) the nucleation of the metal ions on the inert electrode and finally formation of the metal filament between two electrodes. Although the switching processes of cation-based resistance switches are similar to each other, their operation voltages ( V SET values) are quite different, which are closely related to their different performances.…”