Ultra-low-reflectivity semiconductor optical amplifiers without antireflection coatings

Rideout, W.; Holmstrom, R.; LaCourse, J.; Meland, E.; Powazinik, W.

doi:10.1049/el:19900024

Cited by 28 publications

(4 citation statements)

References 6 publications

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“…The reflectivity of the rear-facet of this SOA is enhanced to R = 90% while the front facet is anti-reflection (AR) coated. The waveguide is tilted relative to the AR facet to suppress any residual reflection and hence, its actual reflectivity is reduced to ~10 −5 [17]. Most of the inherent feedback, attributed to any resonant cavity formed between the chip facets and the front end of the fiber lens, is therefore weakened and axial mode instabilities are removed [18].…”

Section: Device Set-upmentioning

confidence: 99%

Purity of the single frequency mode of a hybrid semiconductor-fiber laser

Wahbeh¹,

Kashyap²

2015

Opt. Express

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The penalty of extending the cavity length of a laser diode when seeking a linewidth reduction is normally revealed by poor side mode suppression, which prevents the laser from operating purely in a single mode of the external cavity. A hybrid laser, based on a C-band semiconductor optical amplifier combined with a long erbium doped fiber external cavity, is carefully engineered to operate with high spectral purity and outstanding stability. For the first time, a side-mode suppression ratio of ≥42 dB, measured at a resolution of 1.16 pm (149 MHz) at all intra-cavity powers above the lasing threshold, is reported. The output power at the peak lasing wavelength is 13.3 dBm. Also, the ability to lock such a hybrid laser to a particular external-cavity mode is realized for the first time. Excluding the effect of mechanical and thermal drifts on the cavity length, the long-term frequency stability is demonstrated to be within ± 11 Hz while the long-term linewidth is 2.26 kHz, measured using the self-beating technique under free running conditions.

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Section: Device Set-upmentioning

confidence: 99%

Purity of the single frequency mode of a hybrid semiconductor-fiber laser

Wahbeh¹,

Kashyap²

2015

Opt. Express

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“…This makes it difficult to realize low facet reflectivity reproducibly and, thus, requires a complex in-situ monitoring procedure of the refractive index and film thickness. To easily obtain sufficiently low modal facet reflectivity for a wide wavelength range, various techniques have been reported, such as tilting the waveguide [7], introducing the window region [8], and combining AR coating with others [9]- [13].…”

Section: Introductionmentioning

confidence: 99%

Facet reflectivity of a spot-size-converter integrated semiconductor optical amplifier

Shim

Kim²,

Jang³

et al. 2002

IEEE J. Quantum Electron.

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Traveling-wave type semiconductor optical amplifiers (SOAs) integrated with a spot-size-converter (SSC) are extensively studied for the improvement of coupling efficiency with single-mode fiber and for cost reduction in packaging. In this paper, the structural dependence of the SSC on the effective facet reflectivity e is investigated theoretically as well as experimentally. It is shown that not only a sufficient mode-conversion in a SSC region, but also an introduction of angled facets, are essential for reducing e. A small gain ripple (less than 0.1 dB) in an amplified spontaneous emission (ASE) spectrum, fiber-to-fiber gain of 26 dB, and saturation output power of 7 dBm are observed at the fabricated SOA, which consists of a window length of 20 m, facet angle of 7 , and anti-reflection coated facet of less than 1% reflectivity.

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“…3. The gain medium is a tilted-stripe SLD with the stripe tilted at to the facet normal in order to eliminate the facet reflectivity [11]. The device is 540 m long.…”

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confidence: 99%

Novel self-hybrid mode-locking of semiconductor lasers in an external cavity

Lee¹,

Lin

2000

IEEE Photon. Technol. Lett.

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A new mode-locking method called self-hybrid modelocking is explored. This method uses RF modulation at the subharmonic of pulse repetition frequency so that both active and passive mode-locking mechanisms operate in the same gain region without the necessity of additional integrated absorbers. With the same cavity configuration, self-hybrid mode-locking can generate pulses about 2 shorter than the traditional active mode-locking.

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Ultra-low-reflectivity semiconductor optical amplifiers without antireflection coatings

Cited by 28 publications

References 6 publications

Purity of the single frequency mode of a hybrid semiconductor-fiber laser

Purity of the single frequency mode of a hybrid semiconductor-fiber laser

Facet reflectivity of a spot-size-converter integrated semiconductor optical amplifier

Novel self-hybrid mode-locking of semiconductor lasers in an external cavity

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