Ultra-Low Program Current and Multilevel Phase Change Memory for High-Density Storage Achieved by a Low-Current SET Pre-Operation

He, Mingze; He, Dajiang; Qian, Hang; Lin, Qi; Wan, D.F.; Cheng, Xiaomin; Xu, Ming; Tong, Hao; Miao, Xiangshui

doi:10.1109/led.2019.2935890

Cited by 14 publications

(13 citation statements)

References 22 publications

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“…As presented in Figure 3F , all cells show consistently low power consumption at a few tens of fJ, always below that of CNT‐GST devices (80–100 fJ). [ 34 , 35 ] Note that if GST is used in the same D 250 device setup, the average E RESET value would be of nJ level, [ 64 ] which is 4–5 orders of magnitude higher than the GSO‐ D 250 devices.…”

Section: Resultsmentioning

confidence: 99%

“…RESET is accomplished at ≈1.5 µA, which is a current more than 3 orders of magnitude lower than that in GST‐ D 250 pore‐like devices, for which the current needed is as large as ≈3.0–11.4 mA. [ 64 ] Notably, our I RESET is comparable to that realized in nanowire devices, that is, the CNT‐GST devices (≈5 and ≈1.6 µA for CNT diameters of ≈3 [ 34 ] and ≈1.7 nm [ 35 ] ). This is an indication that the effective switching volume for RESET operations in our device is indeed on nanoscale dimensions and the bridges being open and shut must be very few.…”

Section: Resultsmentioning

confidence: 99%

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Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Yang

Wang

et al. 2022

Advanced Science

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Phase‐change material (PCM) devices are one of the most mature nonvolatile memories. However, their high power consumption remains a bottleneck problem limiting the data storage density. One may drastically reduce the programming power by patterning the PCM volume down to nanometer scale, but that route incurs a stiff penalty from the tremendous cost associated with the complex nanofabrication protocols required. Instead, here a materials solution to resolve this dilemma is offered. The authors work with memory cells of conventional dimensions, but design/exploit a PCM alloy that decomposes into a heterogeneous network of nanoscale crystalline domains intermixed with amorphous ones. The idea is to confine the subsequent phase‐change switching in the interface region of the crystalline nanodomain with its amorphous surrounding, forming/breaking “nano‐bridges” that link up the crystalline domains into a conductive path. This conductive‐bridge switching mechanism thus only involves nanometer‐scale volume in programming, despite of the large areas in contact with the electrodes. The pore‐like devices based on spontaneously phase‐separated Ge13Sb71O16 alloy enable a record‐low programming energy, down to a few tens of femtojoule. The new PCM/fabrication is fully compatible with the current 3D integration technology, adding no expenses or difficulty in processing.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Yang

Wang

et al. 2022

Advanced Science

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“…Moreover, recent advances have demonstrated the use of NVM toward on-chip neuromorphic computing [27] and artificial intelligent (AI) accelerators [29]. In particular, the spin-transfer torque magnetic random access memory (STT-MRAM) [18], resistive random access memory (ReRAM) [7], phase change memory (PCM) [12] and ferroelectric memory [22] have been most widely explored technologies for these IoT and AI applications.…”

Section: Introductionmentioning

confidence: 99%

Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories

Jao

Xiao

Saha

et al. 2021

IEEE J. Explor. Solid-State Comput. Devices Circuits

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We perform a simulation-based analysis on the potential of emerging ferroelectric tunnel junctions (FTJ) as a memory device for crossbar arrays. Though FTJs are promising due to their low power switching characteristics compared to other emerging technologies, the greatest challenge for FTJs is the trade-off between integration density and read performance. Our analysis highlights the need to co-optimize the ferroelectric thickness of the FTJ and read/write voltages to achieve proper functionality at large array sizes. Our analysis shows that FTJbased crossbar achieves 93% higher sense margin at iso-read power of 116nW (per bit) but this FTJ design comes at cost of 9.28× higher write power at iso-write time of 250 ns. In response, we study the potential trade-offs of design points outside the feasible region to understand what device characteristics are desired overcome such challenges.

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“…In this array, phase change random access memory (PCRAM) is used as a memory component because it can meet overall requirements such as rapid switching speed, good data retention, high endurance, high scalability, and low cost 4–6 . For decades, many studies have attempted to improve the performance of PCRAM, namely, by reducing operation energy and enhancing endurance 7,8 . To achieve higher storage density, 3D crossbar technology was exploited to deliver multiple terabytes of storage on a single chip 9 .…”

Section: Introductionmentioning

confidence: 99%

Bidirectional Selector Utilizing Hybrid Diodes for PCRAM Applications

Hatayama

et al. 2019

Sci Rep

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Three-dimensional crossbar technology has been of great significance for realizing high density and multiple terabytes of data storage in memory devices. However, to further scale down the size of memory devices, a selector exhibiting nonlinear electrical properties should be in series with a memory layer in case of unwanted sneak current disturbance. Conventional selectors usually utilize a complicated multilayer structure to realize the high nonlinearity of current, which might be incompatible with certain manufacturing processes or limit the scalability of memory. Herein, we propose a simple heterojunction diode using an n-type oxide semiconductor, specifically, InGaZnO4 (IGZO), and a p-type phase change material (PCM), specifically, N-doped Cr2Ge2Te6 (NCrGT), to realize self-selective performance. The electrode/IGZO/NCrGT/plug-electrode structure with an IGZO/NCrGT pn diode and NCrGT/plug-electrode Schottky diode can realize bidirectional, self-selective phase change random access memory (PCRAM) for either amorphous or crystalline NCrGT. The approximate equilibrium energy band diagrams for the IGZO/NCrGT pn junction and the IGZO/NCrGT/W hybrid junction were proposed to explain the possible conduction mechanism. We demonstrated that hybrid diode-type PCM memory exhibits both selectivity and resistive switching characteristics. The present findings offer new insight into selector technology for PCM.

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Ultra-Low Program Current and Multilevel Phase Change Memory for High-Density Storage Achieved by a Low-Current SET Pre-Operation

Cited by 14 publications

References 22 publications

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Design Space Exploration of Ferroelectric Tunnel Junction Toward Crossbar Memories

Bidirectional Selector Utilizing Hybrid Diodes for PCRAM Applications

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