2011
DOI: 10.1117/12.876404
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Ultra-low-power multiplexed electronic driver for high resolution deformable mirror systems

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Cited by 5 publications
(3 citation statements)
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“…The set-and-forget nature and the application of low voltage input signals greatly reduce the power dissipation of the DM, because no constant HV-input or high update frequency is required to avoid pixel drift as a result of charge leakage of the holding capacitor 14 when high pixel number DMs are considered. This is not only advantageous from an operational point of view but it also limits thermoelastic deformations in the imaging system and eliminates pixel instability as a result of noise in the driver electronics.…”
Section: Principle Of Operationmentioning
confidence: 99%
“…The set-and-forget nature and the application of low voltage input signals greatly reduce the power dissipation of the DM, because no constant HV-input or high update frequency is required to avoid pixel drift as a result of charge leakage of the holding capacitor 14 when high pixel number DMs are considered. This is not only advantageous from an operational point of view but it also limits thermoelastic deformations in the imaging system and eliminates pixel instability as a result of noise in the driver electronics.…”
Section: Principle Of Operationmentioning
confidence: 99%
“…The set-and-forget nature and the application of low voltage input signals, greatly reduces the power dissipation of the DM, because no constant HV-input or high update frequency is required to avoid pixel drift as a result of charge leakage of the holding capacitor [14] when high pixel number DMs are considered. This is not only advantageous from an operational point of view, but it also limits thermoelastic deformations in the imaging system and eliminates pixel instability as a result of noise in the driver electronics.…”
Section: Principle Of Operationmentioning
confidence: 99%
“…This imposes a serious limitation on the desired integrated density and leads to poor performance in the thin-film transistor-based NVMDs [19]. In order to fulfill the particularly required performance such as retention time, endurance, response time, and/or power consumption, plenty of nanomaterials and alternative technologies have been utilized to enhance the integrated density and performance, which open a route to overcome the scaling limitations and economic challenges encountered in the current silicon industry [20-24]. In this survey, we summarize the current researches on fabricating a promising nano-FeFET.…”
Section: Introductionmentioning
confidence: 99%