Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference

Abstract

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of −40–200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage VREF depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of VREF and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

Thermally Stable and Radiation Hard Ferroelectric Hf0.5Zr0.5O2 Thin Films on Muscovite Mica for Flexible Nonvolatile Memory Applications

“…To take full advantage of FeRAMs, commercial vendors are putting great effort on developing new markets, where FeRAMs have found much broader applications in automotive systems, robotic systems, medical devices, contactless smart cards, and food industry. As FeRAMs are becoming more widely used, the demand for them is expected to increase; especially their performance under harsh conditions (such as high temperature and high total ionized dose (TID) radiation) desired for applications is gaining interest.…”

Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad

“…Furthermore, radiation influences for unit circuits, for instance, bandgap reference circuit and bipolar CMOS (BiCMOS) amplifier, were analyzed in terms of output direct current (DC) voltage balance, spurious-free dynamic range (SFDR), etc. [ 11 , 12 , 13 , 14 , 15 ]. Similar to the developed circuits for space environments, suitable radiation hardened readout circuits for NPP conditions have become more highly required in these days.…”