Ultra-Low-Noise Sinusoidally Gated Avalanche Photodiode for High-Speed Single-Photon Detection at Telecommunication Wavelengths

Namekata, Naoto; Adachi, S.; Inoue, Shuichiro

doi:10.1109/lpt.2010.2042054

Cited by 78 publications

(55 citation statements)

References 15 publications

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“…Previous research on single-photon ranging and depth imaging systems at similar wavelengths has relied on semiconductor based detectors, mainly electrically-gated InGaAs/InP SPADs [17,18]. Ren et al [19] used a relatively noisy InGaAs-based SPAD in their 1550 nm wavelength laser ranging system which limited the range measurement to 10's of meters despite milliwatt average laser powers.…”

Section: Introductionmentioning

confidence: 99%

Kilometer-range, high resolution depth imaging via 1560 nm wavelength single-photon detection

McCarthy¹,

Krichel²,

Gemmell³

et al. 2013

Opt. Express

250

145

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This paper highlights a significant advance in time-of-flight depth imaging: by using a scanning transceiver which incorporated a freerunning, low noise superconducting nanowire single-photon detector, we were able to obtain centimeter resolution depth images of low-signature objects in daylight at stand-off distances of the order of one kilometer at the relatively eye-safe wavelength of 1560 nm. The detector used had an efficiency of 18% at 1 kHz dark count rate, and the overall system jitter was ~100 ps. The depth images were acquired by illuminating the scene with an optical output power level of less than 250 µW average, and using per-pixel dwell times in the millisecond regime.

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Section: Introductionmentioning

confidence: 99%

Kilometer-range, high resolution depth imaging via 1560 nm wavelength single-photon detection

McCarthy¹,

Krichel²,

Gemmell³

et al. 2013

Opt. Express

250

145

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show abstract

“…The most successful implementation of this afterpulsing reduction strategy has been the use of gated quenching with very short ($100-200 ps) gate durations. Using either sine-wave gating [5][6][7] or self-differencing techniques [8,9] to eliminate the transient effects inherent in high-frequency gate modulation, this approach has been used to achieve impressive GHz-rate gated operation of InGaAs/InP SPADs.…”

Section: Introductionmentioning

confidence: 99%

Power law temporal dependence of InGaAs/InP SPAD afterpulsing

Itzler

Jiang

Entwistle

2012

Journal of Modern Optics

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The characterization and analysis of afterpulsing behavior in InGaAs/InP single photon avalanche diodes (SPADs) is reported for gating frequencies between 10 and 50 MHz. Gating in this frequency range was accomplished using a matched delay line technique to achieve parasitic transient cancellation, and FPGA-based data acquisition firmware was implemented to provide an efficient, flexible multiple-gate sequencing methodology for obtaining the dependence of afterpulse probability P ap on hold-off time T ho . We show that the detrapping times extracted from the canonical exponential fitting of P ap (T ho ) have no physical significance, and we propose an alternative description of the measured data, which is accurately fit with the simple power law behavior P ap / T À ho with $ 1.2 AE 0.2. We discuss the physical implications of this functional form, including what it may indicate about trap defect distributions and other possible origins of this power law behavior.

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“…The scheme suppressed the spike noise robustly and conveniently. By this means, the detection efficiency of the SPAD reached 10.5% with a dark count rate of 6.1×10 −7 per gate and afterpulse probability of 3.4% at 2 GHz [39]. However, due to the distortion of the avalanche signal caused by the notch filters, the timing jitter of this SPAD was as large as 180 ps, limiting its applications in high-speed QKD systems or ultra-sensitive long-distance laser ranging.…”

Section: Low-pass Filtering Techniquementioning

confidence: 99%

“…Recently, some artful techniques, such as sinusoidal gating, self-differencing, and the combination of both, have been demonstrated to suppress the spike noise efficiently while increase the gating repetition rate over 1 GHz [38][39][40][41][42]. In a sinusoidal gating circuit, the spike noise produced by the applied sinusoidal gates was well cancelled by the specific electric bandelimination filters, considering that the APD's capacitive response exhibits a relatively simple frequency spectrum.…”

Section: Introductionmentioning

confidence: 99%

High-Speed Single-Photon Detection with Avalanche Photodiodes in the Near Infrared

Liang¹,

Zeng²

2015

Optoelectronics - Materials and Devices

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As the requisite optical components in quantum information processing, single-photon detectors of high performance at the near-infrared wavelengths are in urgent need. In this paper, we review our recent development in high-speed single-photon detection with avalanche photodiodes, increasing the working repetition frequency up to GHz. Ingenious techniques, such as capacitance-balancing, self-differencing, low-pass filtering, and frequency up-conversion, were employed to achieve highspeed single-photon detection with high detection efficiency and low error counts, offering facility for many important applications, such as laser ranging and imaging, quantum key distribution at GHz clock rate.

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Ultra-Low-Noise Sinusoidally Gated Avalanche Photodiode for High-Speed Single-Photon Detection at Telecommunication Wavelengths

Cited by 78 publications

References 15 publications

Kilometer-range, high resolution depth imaging via 1560 nm wavelength single-photon detection

Kilometer-range, high resolution depth imaging via 1560 nm wavelength single-photon detection

Power law temporal dependence of InGaAs/InP SPAD afterpulsing

High-Speed Single-Photon Detection with Avalanche Photodiodes in the Near Infrared

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