2017
DOI: 10.1364/optica.4.000619
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Ultra-low-loss on-chip resonators with sub-milliwatt parametric oscillation threshold

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Cited by 470 publications
(331 citation statements)
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“…All listed applications benefit from small V eff and most benefit from high Q. Moreover, because Q factors are often practically limited (by material losses, scattering [29], or application-specific bandwidth constraints), reducing V eff is particularly beneficial for many applications.…”
Section: Prl 118 223605 (2017) P H Y S I C a L R E V I E W L E T T Ementioning
confidence: 99%
“…All listed applications benefit from small V eff and most benefit from high Q. Moreover, because Q factors are often practically limited (by material losses, scattering [29], or application-specific bandwidth constraints), reducing V eff is particularly beneficial for many applications.…”
Section: Prl 118 223605 (2017) P H Y S I C a L R E V I E W L E T T Ementioning
confidence: 99%
“…The possible contributing factors are ionimplantation damage introduced during the LN thin-film production process, top-surface roughness due to LN polishing, and finite PECVD SiO 2 cladding absorption. Importantly, these loss mechanisms could be mitigated by a combination of defects annealing and finer top-surface polishing [8]. We expected that the these loss contributions of the monolithic LN platform could be further reduced towards its material intrinsic loss limit of < 0.1 dB/m [1].…”
mentioning
confidence: 99%
“…For instance, figures 7(b) and 8(c) show that 99% conversion efficiency and spectral purity is possible for Q L /Q i ∼400. If, for instance, the pump, idler, and output modes have coupling Qs of 10 4 the corresponding intrinsic Q must be 4×10 6 , which is well below what has been demonstrated [35]. Electronic feedback control at these short timescales remains to be demonstrated, but since many quantum information processing tasks rely on it, we are optimistic that the field will progress sufficiently.…”
Section: Discussionmentioning
confidence: 90%