Ultra-low density InAs quantum dots

Dubrovskiı̆, V. G.; Cirlin, G. É.; Brunkov, P. N.; Perimetti, U.; Akopyan, N.

doi:10.1134/s1063782613100096

Semiconductors

2013

DOI: 10.1134/s1063782613100096

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Ultra-low density InAs quantum dots

V. G. Dubrovskiı̆

G. É. Cirlin

P. N. Brunkov

et al.

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2017

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“…Offcut substrate can also be used to achieve nucleation of low density QDs in the range 10 7 -10 8 cm −2 without any growth interruption or post-growth annealing. 13 As a result, a QD density gradient is found along the same direction of thermal gradient and QDs with density as low as ∼8 × 10 6 cm −2 are observed in the high temperature region. 14 Recently, very low-density QDs (∼4 × 10 6 cm −2 ) is reported by using a low InAs growth rate and a high growth temperature.…”

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confidence: 66%

Fabrication of ultralow-density quantum dots by droplet etching epitaxy

Wang

et al. 2017

J. Mater. Res.

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Isolated single quantum dots enable the investigation of quantum-optics phenomena for the application of quantum information technologies. In this work, ultralow density InAs quantum dots are grown by combining Droplet Etching Epitaxy and the conventional epitaxy growth mode. The extremely low density of quantum dots (~10 6 cm -2 ) are realized by creating low density self-assembled nanoholes with the high temperature Droplet Etching Epitaxy technique and then nanohole-filling. The preferred nucleation of quantum dots in nanoholes has been explained by a theoretical model. Atomic force microscopy and photoluminescence technique are used to investigate the morphological and optical properties the quantum dot samples. By varying In coverages, the size of InAs quantum dots can be controlled. Moreover, with a thin GaAs cap layer, the position of quantum dots remains visible on the sample surface. Such a low density and surface signature of quantum dots make this growth method promising for single quantum dot investigation and single dot device fabrication.

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confidence: 66%

Fabrication of ultralow-density quantum dots by droplet etching epitaxy

Wang

et al. 2017

J. Mater. Res.

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Ultra-low density InAs quantum dots

Cited by 1 publication

References 22 publications

Fabrication of ultralow-density quantum dots by droplet etching epitaxy

Fabrication of ultralow-density quantum dots by droplet etching epitaxy

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