Ultra-low density and high performance InAs quantum dot single photon emitters

Abstract

We report the development of high quality InAs quantum dots with an ultra-low density of 2 × 107 cm−2 on (001) GaAs substrates. A significant reduction in the emission wavelength inhomogeneity has been observed. A representative dot has been characterized under cryogenic temperatures, demonstrating a close-to-ideal antibunching of both the exciton and biexciton emissions with a fitted g(2)(0) = 0.008 and 0.059, respectively.