Ultra low 1/<i>f</i> noise in suspended bilayer graphene

Kumar, Manohar; Laitinen, Antti; Cox, Daniel J.; Hakonen, Pertti

doi:10.1063/1.4923190

Cited by 29 publications

(32 citation statements)

References 26 publications

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“…Even for the widely studied graphene FET it is still unclear what the dominant contribution is to the 1/f noise. Conflicting claims exist, where some studies attribute the 1/f -noise in graphene transistors primarily to noise generated within the channel region [7][8][9], whereas other investigations indicate a strong contribution from the contacts [10][11][12]. This distinction has remained elu-sive to existing studies [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] due to the lack of a microscopic understanding of how processes characteristic to the metal-graphene junctions, in particular the current crowding effect [22][23][24][25][26][27], impact the nature and magnitude of 1/f noise.…”

Section: Introductionmentioning

confidence: 99%

Current crowding mediated large contact noise in graphene field-effect transistors

et al. 2016

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The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene–metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm2 V−1 s−1. Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal–channel interface, which could be generic to two-dimensional material-based electronic devices.

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Section: Introductionmentioning

confidence: 99%

Current crowding mediated large contact noise in graphene field-effect transistors

et al. 2016

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“…To date, most of the studies on graphene noise have been conducted on mechanically exfoliated single layer and bilayer devices [15,16,17,18,19]. It has been observed that the noise is usually smaller in bilayer structures compared to single layer devices.…”

Section: Introductionmentioning

confidence: 99%

“…The noise is dependent on the gate-induced carrier density and hence is expected to vary with the charge concentration at the surface [15]. Further, the noise magnitude has also been reported to depend on the disorder level, thickness of the grain boundaries [16] and also on the substrate on which it has been deposited [18,19]. Tan et al report that nanoribbons show lower flicker noise levels than planar graphene but the shot noise increases in graphene nanoribbons due to increased scattering in the presence of disordered edges [20,21,22].…”

Section: Introductionmentioning

confidence: 99%

Graphene Nanogrids FET Immunosensor: Signal to Noise Ratio Enhancement

Basu

RoyChaudhuri

2016

Sensors

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Recently, a reproducible and scalable chemical method for fabrication of smooth graphene nanogrids has been reported which addresses the challenges of graphene nanoribbons (GNR). These nanogrids have been found to be capable of attomolar detection of biomolecules in field effect transistor (FET) mode. However, for detection of sub-femtomolar concentrations of target molecule in complex mixtures with reasonable accuracy, it is not sufficient to only explore the steady state sensitivities, but is also necessary to investigate the flicker noise which dominates at frequencies below 100 kHz. This low frequency noise is dependent on the exposure time of the graphene layer in the buffer solution and concentration of charged impurities at the surface. In this paper, the functionalization strategy of graphene nanogrids has been optimized with respect to concentration and incubation time of the cross linker for an enhancement in signal to noise ratio (SNR). It has been interestingly observed that as the sensitivity and noise power change at different rates with the functionalization parameters, SNR does not vary monotonically but is maximum corresponding to a particular parameter. The optimized parameter has improved the SNR by 50% which has enabled a detection of 0.05 fM Hep-B virus molecules with a sensitivity of around 30% and a standard deviation within 3%. Further, the SNR enhancement has resulted in improvement of quantification accuracy by five times and selectivity by two orders of magnitude.

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“…The ten-fold increase in the upwards transition rate brings the value of τ 0 close to the value of τ s (see below), which means gradual overlapping of individual avalanche pulses. The second increase in low-f noise is assigned to the contacts, which are known to have low-frequency resistance fluctuations even in the case of the best suspended samples [39].…”

Section: Low Frequency Switching Noisementioning

confidence: 99%

Breakdown of Zero-Energy Quantum Hall State in Graphene in the Light of Current Fluctuations and Shot Noise

et al. 2018

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We have investigated the cross-over from Zener tunneling of single charge carriers to avalanche type of bunched electron transport in a suspended graphene Corbino disk in the zeroth Landau level. At low bias, we find a tunneling current that follows the gyrotropic Zener tunneling behavior. At larger bias, we find avalanche type of transport that sets in at a smaller current the larger the magnetic field is. The low-frequency noise indicates strong bunching of the electrons in the avalanches. On the basis of the measured low-frequency switching noise power, we deduce the characteristic switching rates of the avalanche sequence. The simultaneous microwave shot noise measurement also reveals intrinsic correlations within the avalanche pulses and indicate decrease of correlations with increasing bias.

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Ultra low 1/f noise in suspended bilayer graphene

Cited by 29 publications

References 26 publications

Current crowding mediated large contact noise in graphene field-effect transistors

Current crowding mediated large contact noise in graphene field-effect transistors

Graphene Nanogrids FET Immunosensor: Signal to Noise Ratio Enhancement

Breakdown of Zero-Energy Quantum Hall State in Graphene in the Light of Current Fluctuations and Shot Noise

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