Ultra-High Total Ionizing Dose Effects in a Highly Integrated and RF-Agile Transceiver

Budroweit, Jan; Jaksch, Mattis Paul; Borghello, Giulio

doi:10.1109/redw51883.2020.9325832

Cited by 4 publications

(2 citation statements)

References 7 publications

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“…In 2021, J. Feng studied the TID effect on an 8-transistor global-shutter-exposure complementary metal–oxide–semiconductor image sensor (CIS) within a star sensor [ 5 ]. The effects of the TID Effect on CMOS-ICs are well studied [ 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 ]. Regarding the research on TSVs, Li Yanruoyue and his team used the finite element method to determine the effect of the thickness of the SiO 2 layer on the distribution of thermal stress [ 14 ].…”

Section: Introductionmentioning

confidence: 99%

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Modeling and Validation of Total Ionizing Dose Effect on the TSVs in RF Microsystem

Yang

Shan

et al. 2023

Micromachines

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Radio frequency (RF) systems utilizing through-silicon vias (TSVs) have been widely used in the aerospace and nuclear industry, which means that studying the total ionizing dose (TID) effect on TSV structures has become necessary. To investigate the TID effect on TSV structures, a 1D TSV capacitance model was established in COMSOL Multiphysics (COMSOL), and the impact of irradiation was simulated. Then, three types of TSV components were designed, and an irradiation experiment based on them was conducted, to validate the simulation results. After irradiation, the S21 degraded for 0.2 dB, 0.6 dB, and 0.8 dB, at the irradiation dose of 30 krad (Si), 90 krad (Si), 150 krad (Si), respectively. The variation trend was consistent with the simulation in the high-frequency structure simulator (HFSS), and the effect of irradiation on the TSV component was nonlinear. With the increase in the irradiation dose, the S21 of TSV components deteriorated, while the variation of S21 decreased. The simulation and irradiation experiment validated a relatively accurate method for assessing the RF systems’ performance under an irradiation environment, and the TID effect on structures similar to TSVs in RF systems, such as through-silicon capacitors.

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Section: Introductionmentioning

confidence: 99%

“…In 2021, J. Feng studied the TID effect on an 8-transistor global-shutter-exposure complementary metal-oxide-semiconductor image sensor (CIS) within a star sensor [5]. The effects of the TID Effect on CMOS-ICs are well studied [6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%