Ultra-high throughput of GaAs and (AlGa)As layers grown by MBE with a specially designed MBE system

Sonoda, T.; Ito, Minami; Kobiki, M.; Hayashi, Kazuhiro; Takamiya, S.; Mitsui, S.

doi:10.1016/0022-0248(89)90409-0

Cited by 29 publications

(1 citation statement)

References 4 publications

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“…Although epitaxial integration of SrTiO 3 on Si has been successfully demonstrated 15 and has been scaled up to 200 mm Si wafers using an industry-scale molecular beam epitaxy (MBE) system 16 , typical film growth rates of about 50 nm h −1 or lower 16–19 impede high-throughput required for profitability. MBE systems have been operated on an industrial scale since the 1980s 20 primarily for the growth of high-quality binary semiconductor structures with controlled stoichiometry and desired composition at growth rates in excess of 1000 nm h −1 21,22 . Metamorphic buffers have been developed for nonoxide materials using this growth technology 23,24 .…”

Section: Introductionmentioning

confidence: 99%

Scaling growth rates for perovskite oxide virtual substrates on silicon

et al. 2019

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The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO 3 exceeding 600 nm hr −1 . This tenfold increase in growth rate compared to SrTiO 3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.

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Section: Introductionmentioning

confidence: 99%

Scaling growth rates for perovskite oxide virtual substrates on silicon

et al. 2019

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Frontiers in the Growth of Complex Oxide Thin Films: Past, Present, and Future of Hybrid MBE

Brahlek

Gupta

Lapano

et al. 2017

Adv Funct Materials

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Driven by an ever-expanding interest in new material systems with new functionality, the growth of atomic-scale electronic materials by molecular beam epitaxy (MBE) has evolved continuously since the 1950s. Here, a new MBE technique called hybrid-MBE (hMBE) is reviewed that has been proven a powerful approach for tackling the challenge of growing high-quality, multicomponent complex oxides, specifically the ABO 3 perovskites. The goal of this work is to (1) discuss the development of hMBE in a historical context, (2) review the advantageous surface kinetics and chemistry that enable the self-regulated growth of ABO 3 perovskites, (3) layout the key components and technical challenges associated with hMBE, (4) review the status of the field and the materials that have been successfully grown by hMBE which demonstrate its general applicability, and (5) discuss the future of hMBE in regards to technical innovations and expansion into new material classes, which are aimed at expanding into industrial realm and at tackling new scientific endeavors.

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HEMT Materials

Kondo¹,

Komeno²

1993

Compound and Josephson High-Speed Devices

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Ultra-high throughput of GaAs and (AlGa)As layers grown by MBE with a specially designed MBE system

Cited by 29 publications

References 4 publications

Scaling growth rates for perovskite oxide virtual substrates on silicon

Scaling growth rates for perovskite oxide virtual substrates on silicon

Frontiers in the Growth of Complex Oxide Thin Films: Past, Present, and Future of Hybrid MBE

HEMT Materials

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