Ultra high temperature latent heat energy storage and thermophotovoltaic energy conversion

Datas, Alejandro; Ramos, Antonio Callejo; Martı́, Antonio; Cañizo, Carlos del; Ĺuque, A.

doi:10.1016/j.energy.2016.04.048

Cited by 110 publications

(67 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Furthermore, few very fine particles were distributed along the interface. However, we found that the formed product is not Si 3 was hard to analyze composition of these small particles by the EDS technique, the obtained results revealed a very small content of nitrogen (that was probably the erroneous effect coming from the close vicinity of h-BN substrate), and Si and C content corresponding to silicon carbide phase. The presence of SiC phase at the interface of the Si/h-BN couple was additionally confirmed by the SEM/EDS examinations and Vickers instrumental indentation of three relatively large crystals found at the interface (Fig.…”

Section: Reactivity Inmentioning

confidence: 99%

Wetting Behavior and Reactivity of Molten Silicon with h-BN Substrate at Ultrahigh Temperatures up to 1750 °C

Polkowski

Sobczak

Nowak

et al. 2017

J. of Materi Eng and Perform

Self Cite

View full text Add to dashboard Cite

For a successful implementation of newly proposed silicon-based latent heat thermal energy storage systems, proper ceramic materials that could withstand a contact heating with molten silicon at temperatures much higher than its melting point need to be developed. In this regard, a non-wetting behavior and low reactivity are the main criteria determining the applicability of ceramic as a potential crucible material for long-term ultrahigh temperature contact with molten silicon. In this work, the wetting of hexagonal boron nitride (h-BN) by molten silicon was examined for the first time at temperatures up to 1750°C. For this purpose, the sessile drop technique combined with contact heating procedure under static argon was used. The reactivity in Si/h-BN system under proposed conditions was evaluated by SEM/EDS examinations of the solidified couple. It was demonstrated that increase in temperature improves wetting, and consequently, non-wetting-to-wetting transition takes place at around 1650°C. The contact angle of 90°± 5°is maintained at temperatures up to 1750°C. The results of structural characterization supported by a thermodynamic modeling indicate that the wetting behavior of the Si/h-BN couple during heating to and cooling from ultrahigh temperature of 1750°C is mainly controlled by the substrate dissolution/reprecipitation mechanism.

show abstract

Section: Reactivity Inmentioning

confidence: 99%

Wetting Behavior and Reactivity of Molten Silicon with h-BN Substrate at Ultrahigh Temperatures up to 1750 °C

Polkowski

Sobczak

Nowak

et al. 2017

J. of Materi Eng and Perform

Self Cite

View full text Add to dashboard Cite

show abstract

“…Much effort has been done in the theoretical analysis and experimental design of TPVCs. Datas et al proposed a new TPVC to optimize the band gap energy of the material [13,14] and reported some ultra-high temperature phase change materials used in a TPVC [15]. Pan et al discussed the effect of distance between the emitter and the PV cell on the performance of a TPVC [12].…”

Section: Introductionmentioning

confidence: 99%

“…Pan et al discussed the effect of distance between the emitter and the PV cell on the performance of a TPVC [12]. Datas et al proposed a new TPVC to optimize the band gap energy of the material [13,14] and reported some ultra-high temperature phase change materials used in a TPVC [15]. Celanovic et al analyzed the optical performance of a TPVC and optimized dielectric stack design [16].…”

Section: Introductionmentioning

confidence: 99%

Parametric optimum design criteria of a thermophotovoltaic cell

Yang

Wang

Chen

et al. 2017

Env Prog and Sustain Energy

View full text Add to dashboard Cite

A new model of the thermophotovoltaic cell (TPVC) including internal and external irreversible losses is proposed. Expressions for the efficiency and power output of the TPVC are analytically derived. The curves of the temperatures of the emitter and the photovoltaic (PV) cell, two heat flows of the TPVC, and current density of the PV cell varying with the voltage output are presented through numerical calculation. The effects of the voltage output of the PV cell and the band gap energy of the semiconductor material in the PV cell on the efficiency and power output are discussed in detail. The maximum efficiency and power output density are calculated. The choice criteria of some key parameters are supplied. The influence of the temperature of the heat source on the performance of the TPVC is revealed. The lower and upper bounds of the optimized parameters are determined. The results obtained here may provide some theoretical guidance for the optimal design of practical TPVCs. © 2017 American Institute of Chemical Engineers Environ Prog, 37: 513–517, 2018

show abstract

“…Thermionic conversion was also recently revisited for concentrated solar-power applications. In the most direct incarnation, solar radiation is simply used as the heat source for the cathode, driven by the development of low-workfunction emitters that can operate under moderate temperatures ( ∼ 700°C), 20 and formulation of new concepts such as thermionic-photovoltaic 21 and thermionic-thermoelectric 22 , 23 combined hybrid devices. However, the availability of highenergy photons enables new combinations of photon and thermal mechanisms.…”

Section: Thermionic Emissionmentioning

confidence: 99%

Electron-emission materials: Advances, applications, and models

Trucchi

Melosh

2017

MRS Bull.

View full text Add to dashboard Cite

Electron emission represents the key mechanism enabling the development of devices that have revolutionized modern science and technology. Today, science still relies on advanced electron-emission devices for imaging, electronics, sensing, and high-energy physics. New generations of emission devices are continuously being improved based on innovative materials and the introduction of novel physical concepts. Recent advances are highlighted by emerging low-work-function and low-dimensional materials with unusual electronic and thermal properties. Nanotubes, nanowires, graphene, and electron-emission models are discussed in this issue, as well as original mechanisms, such as the thermoelectronic effect, thermionic emission, and heat trap processes. Advances in electron-emission materials and physics are driving a renaissance in the fi eld, both opening up new applications, such as energy conversion and ultrafast electronics, as well as improving traditional applications in electron imaging and high-energy science. ELECTRON-EMISSION MATERIALS: ADVANCES, APPLICATIONS, AND MODELS 489MRS BULLETIN • VOLUME 42 • JULY 2017 • www.mrs.org/bulletin thermionic, and fi eld electron emission, or combinations of one or more of these. Each particular physical stimulus necessitates cathode materials with physical properties specifi cally engineered for optimal performance. This section will present an overview of the latest results on the development of advanced materials and related applications, categorized by the specifi c type of electron emission. Photoemission and secondary electron emissionPhotomultipliers remain the lowest noise, highest sensitivity, and fastest imaging systems. Used, for instance, in fl uorescence and laser scanning confocal microcopy, they exploit electron emission from a photocathode and, successively, secondary emissions from electron multiplying stages. Photons to be detected induce the emission of electrons from a material, usually a thin layer in transmission mode. The emitted electron can be accelerated in a vacuum tube by an electric fi eld toward an electron multiplier stage composed of a set of dynodes, which are basic components that emit several low-energy electrons (secondary electrons) when one high-energy electron (primary electron) impinges on their surfaces. Figure 2 shows two common photomultiplier confi gurations. The sensitivity of photocathodes depends on the energy of impinging photons. Consequently, it is not possible to defi ne the best possible photoemission material for a wide range of optical wavelengths.III-V semiconductors with a bandgap engineered according to the corresponding photon energy band are the preferred solution for detecting visible and infrared (IR) radiation; these are also characterized by ultrafast response.4 Cesium-coated GaAs operates at wavelengths up to 930 nm, whereas InGaAs extends the IR range up to 1700 nm. Ag-O-Cs materials are also used for visible-IR detection, with a preferred use in the near-IR region due to a higher sensitivity.5 Multi-alkali-b...

show abstract

Ultra high temperature latent heat energy storage and thermophotovoltaic energy conversion

Cited by 110 publications

References 24 publications

Wetting Behavior and Reactivity of Molten Silicon with h-BN Substrate at Ultrahigh Temperatures up to 1750 °C

Wetting Behavior and Reactivity of Molten Silicon with h-BN Substrate at Ultrahigh Temperatures up to 1750 °C

Parametric optimum design criteria of a thermophotovoltaic cell

Electron-emission materials: Advances, applications, and models

Contact Info

Product

Resources

About