Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor

Zhu, Ping; Zhao, Ziming; Nie, Jiaheng; Hu, Gongwei; Li, Lijie; Zhang, Yan

doi:10.1016/j.nanoen.2018.06.035

Cited by 28 publications

(15 citation statements)

References 29 publications

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“…When combined with FET, piezoelectric material which converts the external mechanical signals into electrical signals can realize the control performance of devices by external stress. [ 97–100 ] For example, Wang and co‐workers used piezoelectret MoS 2 FET to achieve static/dynamic modulation. [ 101 ] They used a piezoelectret material poly‐(vinylidenefluoride‐co‐trifluoroethylene) (P(VDF‐TrFE)) as the gate to realize the control of the single‐layer MoS 2 FET under different polarization voltage and strain conditions, and obtained the stress sensor with high sensitivity, faster response time, and high stability.…”

Section: Tactile Sensors Based On Piezophototronic Effectmentioning

confidence: 99%

Piezophototronic Effect in Nanosensors

et al. 2021

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The piezophototronic effect is the coupling of piezoelectricity, semiconductor behavior and photon excitation in wurtzite materials, which can enhance the performance of optoelectronic nano‐devices by regulating a series of processes of carrier injection, transport, and recombination. In recent years, many research results have been reported on the improvement of nanophotoelectric nano‐device efficiency by piezophototronic effect, such as photovoltaic devices, light‐emitting devices, transistors, etc. Herein, the research results of piezophototronic effect in the field of nanosensors, including enhancing the performance of traditional nanosensors and new types of pressure/deformation/tactile sensors based on piezophototronic effect are comprehensively summarized. Finally, the future development of piezophototronic effect in the field of nanosensors is discussed.

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Section: Tactile Sensors Based On Piezophototronic Effectmentioning

confidence: 99%

Piezophototronic Effect in Nanosensors

et al. 2021

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“…This explanation is supported by our finding that devices with higher initial currents exhibited lower sensitivities (see the comparison between devices A and B in Figure 4). Interestingly, in a recent theoretical work, a piezotronic bipolar transistor was examined [40],…”

Section: Resultsmentioning

confidence: 99%

Highly sensitive piezotronic pressure sensors based on undoped GaAs nanowire ensembles

Calahorra

Husmann

Bourdelain

et al. 2019

J. Phys. D: Appl. Phys.

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Semiconducting piezoelectric materials have attracted considerable interest due to their central role in the emerging field of piezotronics, where the development of a piezo-potential in response to stress or strain can be used to tune the band structure of the semiconductor, and hence its electronic properties.This coupling between piezoelectricity and semiconducting properties can be readily exploited for force or pressure sensing using nanowires, where the geometry and unclamped nature of nanowires render them particularly sensitive to small forces. At the same time, piezoelectricity is known to manifest more strongly in nanowires of certain semiconductors. Here, we report the design and fabrication of highly sensitive piezotronic pressure sensors based on GaAs nanowire ensemble sandwiched between two electrodes in a back-to-back diode configuration. We analyse the current-voltage characteristics of these nanowire-based devices in response to mechanical loading in light of the corresponding changes to the device band structure. We observe a high piezotronic sensitivity to pressure, of ~7800 meV/MPa. We attribute this high sensitivity to the nanowires being fully depleted due to the lack of doping, as well as due to geometrical pressure focusing and current funnelling through polar interfaces.

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“…However, owing to the strong chemical bonding force between the molecular structures, piezoelectric and piezoresistive sensors exhibit a high Young's modulus and very narrow strain range (<10%). [ 3,4 ] Nevertheless, human skin at the joints allows a strain of over 30%, [ 5 ] which is several orders of magnitude lower than that of piezoelectric and piezoresistive materials. Additionally, considering biological signaling is mediated by ions, the intimate communication between piezoelectric or piezoresistive electronic sensors and biological systems is a technological challenge.…”

Section: Introductionmentioning

confidence: 99%

Ionic Flexible Sensors: Mechanisms, Materials, Structures, and Applications

Zhao

Wang

Tang

et al. 2022

Adv Funct Materials

Self Cite

109

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Over the past few decades, flexible sensors have been developed from the "electronic" level to the "iontronic" level, and gradually to the "ionic" level. Ionic flexible sensors (IFS) are one kind of advanced sensors that are based on the concept of ion migration. Compared to conventional electronic sensors, IFS can not only replicate the topological structures of human skin, but also are capable of achieving tactile perception functions similar to that of human skin, which provide effective tools and methods for narrowing the gap between conventional electronics and biological interfaces. In this review, the latest research and developments on several typical sensing mechanisms, compositions, structural design, and applications of IFS are comprehensively reviewed. Particularly, the development of novel ionic materials, structural designs, and biomimetic approaches has resulted in the development of a wide range of novel and exciting IFS, which can effectively sense pressure, strain, and humidity with high sensitivity and reliability, and exhibit self-powered, self-healing, biodegradability, and other properties of the human skin. Furthermore, the typical applications of IFS in artificial skin, human-interactive technologies, wearable health monitors, and other related fields are reviewed. Finally, the perspectives on the current challenges and future directions of IFS are presented.

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Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor

Abstract: 2018). Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor. Nano Energy, 50,[744][745][746][747][748][749] http://dx.

Cited by 28 publications

References 29 publications

Piezophototronic Effect in Nanosensors

Piezophototronic Effect in Nanosensors

Highly sensitive piezotronic pressure sensors based on undoped GaAs nanowire ensembles

Ionic Flexible Sensors: Mechanisms, Materials, Structures, and Applications

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