Ultra-high resistive switching current ratio and improved ferroelectricity and dielectric tunability performance in a BaTiO3/La0.7Sr0.3MnO3 heterostructure by inserting a SrCoO2.5 layer

Zhang, Xi; Chen, Xin; Cao, J. P.; Wang, H. W.; Deng, W. Y.; Yang, L. H.; Lin, K.; Li, Q.; Li, Q. H.; Cao, Y. L.; Deng, J. X.; Miao, Jun

doi:10.1039/d3nr04591a

Nanoscale

2024

DOI: 10.1039/d3nr04591a

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Ultra-high resistive switching current ratio and improved ferroelectricity and dielectric tunability performance in a BaTiO₃/La_0.7Sr_0.3MnO₃ heterostructure by inserting a SrCoO_2.5 layer

Xi Zhang,

Xin Chen,

J. P. Cao

et al.

Abstract: BaTiO3/SrCoO2.5 (BTO/SCO) bilayer and BTO single film were prepared by radio frequency magnetron sputtering on La0.7Sr0.3MnO3 (LSMO) buffered SrTiO3 (001) substrates. Interestingly, compared with reported BTO-based film, the BTO/SCO/LSMO heterostructure...

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Cited by 2 publications

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The electronic structure and magnetic properties of stable Sr2BB′O5 (B = Fe, Co, Ni and B′ = Co, Ni, Mn) with the brownmillerite structure

Huang,

Chen,

et al. 2024

AIP Advances

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First-principles calculations have been performed to investigate the structural, electronic, and magnetic properties of Sr2BB′O5 (B = Fe, Co, Ni; B′ = Co, Ni, Mn) brownmillerite materials. By considering the atomic arrangements and the tetrahedral rotated modes, including typical magnetic configurations, the ground states are found by comparing their total energy. The thermodynamic and dynamic stability studies revealed that two compounds, Sr2FeCoO5 and Sr2NiMnO5, could be stable in the brownmillerite structure. Further electronic structure calculations show that the ground state of Sr2FeCoO5 is a G-AFM insulator, while the ground state of Sr2NiMnO5 is an A-AFM half-metal with a half-metallic bandgap of about 1 eV, exhibiting excellent half-metallic properties. In addition, the magnetic interactions are analyzed, which suggest that Sr2FeCoO5 could suffer from the influence of the B-site atomic disorder to maintain the G-AFM state, while Sr2NiMnO5 is more sensitive to atomic disorder, so its A-AFM state would be easily destroyed by the B-site disorder. These results would be helpful for further research.

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The electronic structure and magnetic properties of stable Sr2BB′O5 (B = Fe, Co, Ni and B′ = Co, Ni, Mn) with the brownmillerite structure

Huang,

Chen,

et al. 2024

AIP Advances

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Study of the Characteristics of Ba0.6Sr0.4Ti1-xMnxO3-Film Resistance Random Access Memory Devices

Chen,

Cheng,

Kao

et al. 2024

Micromachines

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In this study, Ba0.6Sr0.4Ti1-xMnxO3 ceramics were fabricated by a novel ball milling technique followed by spin-coating to produce thin-film resistive memories. Measurements were made using field emission scanning electron microscopes, atomic force microscopes, X-ray diffractometers, and precision power meters to observe, analyze, and calculate surface microstructures, roughness, crystalline phases, half-height widths, and memory characteristics. Firstly, the effect of different sintering methods with different substitution ratios of Mn4+ for Ti4+ was studied. The surface microstructural changes of the films prepared by the one-time sintering method were compared with those of the solid-state reaction method, and the effects of substituting a small amount of Ti4+ with Mn4+ on the physical properties were analyzed. Finally, the optimal parameters obtained in the first part of the experiment were used for the fabrication of the thin-film resistive memory devices. The voltage and current characteristics, continuous operation times, conduction mechanisms, activation energies, and hopping distances of two types of thin-film resistive memory devices, BST and BSTM, were measured and studied under different compliance currents.

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Ultra-high resistive switching current ratio and improved ferroelectricity and dielectric tunability performance in a BaTiO₃/La_0.7Sr_0.3MnO₃ heterostructure by inserting a SrCoO_2.5 layer

Abstract: BaTiO3/SrCoO2.5 (BTO/SCO) bilayer and BTO single film were prepared by radio frequency magnetron sputtering on La0.7Sr0.3MnO3 (LSMO) buffered SrTiO3 (001) substrates. Interestingly, compared with reported BTO-based film, the BTO/SCO/LSMO heterostructure...

Cited by 2 publications

References 60 publications

The electronic structure and magnetic properties of stable Sr2BB′O5 (B = Fe, Co, Ni and B′ = Co, Ni, Mn) with the brownmillerite structure

The electronic structure and magnetic properties of stable Sr2BB′O5 (B = Fe, Co, Ni and B′ = Co, Ni, Mn) with the brownmillerite structure

Study of the Characteristics of Ba0.6Sr0.4Ti1-xMnxO3-Film Resistance Random Access Memory Devices

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