2011
DOI: 10.1364/oe.19.013551
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Ultra-high quality factor planar Si_3N_4 ring resonators on Si substrates

Abstract: Abstract:We demonstrate planar Si 3 N 4 ring resonators with ultra-high quality factors (Q) of 19 million, 28 million, and 7 million at 1060 nm, 1310 nm, and 1550 nm, respectively. By integrating the ultra-low-loss Si 3 N 4 ring resonators with laterally offset planar waveguide directional couplers, optical add-drop and notch filters are demonstrated to have ultra-narrow bandwidths of 16 MHz, 38 MHz, and 300 MHz at 1060 nm, 1310 nm, and 1550 nm, respectively. These are the highest Qs reported for ring resonato… Show more

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Cited by 129 publications
(76 citation statements)
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“…Upon further coupler optimization and full exploitation of the low-loss TriPleX platform (i.e., α ch < 0.0005 dB/cm) Q-factors as high as 6 × 10 8 are predicted. A range of ring resonators suited for application over a wide wavelength range (1060, 1310 and 1550 nm) was studied in [67]. Based on single-mode TE propagation in two different TriPleX single stripe geometries (50 nm × 5.3 μm and 80 nm × 2.8 μm with bending radii of 5 and 2 mm, respectively), Q-factors of 19, 28, 7 × 10 6 were demonstrated at 1060, 1310, and 1550 nm wavelength, respectively.…”
Section: Communicationsmentioning
confidence: 99%
“…Upon further coupler optimization and full exploitation of the low-loss TriPleX platform (i.e., α ch < 0.0005 dB/cm) Q-factors as high as 6 × 10 8 are predicted. A range of ring resonators suited for application over a wide wavelength range (1060, 1310 and 1550 nm) was studied in [67]. Based on single-mode TE propagation in two different TriPleX single stripe geometries (50 nm × 5.3 μm and 80 nm × 2.8 μm with bending radii of 5 and 2 mm, respectively), Q-factors of 19, 28, 7 × 10 6 were demonstrated at 1060, 1310, and 1550 nm wavelength, respectively.…”
Section: Communicationsmentioning
confidence: 99%
“…In the C-band at a wavelength of 1550 nm Si 3 N 4 waveguides with a propagation loss of 3 dB/m at 2 mm bend radius and 8 dB/m at 0.5 mm bend radius have been previously demonstrated [37]. In [38] ring resonators with quality factors of 7 × 10 6 at a much larger bend radius of 2 mm have been presented, corresponding to propagation losses of 2.9 dB/m. However, in both cases the waveguide core had been completely surrounded by a SiO 2 cladding, which would lead to weaker graphene-waveguide interaction because of a larger separation between the optical mode and the graphene layer.…”
Section: High Quality / Phase Sensitive Devicesmentioning
confidence: 99%
“…For wider band applications covering visible wavelengths, photonic devices have to be realized in different material systems that are compatible with silicon fabrication processes. Within the group of wide bandgap semiconductors, silicon nitride (Si 3 N 4 ) has attracted particular interest for the realization of CMOS compatible nanophotonic devices [5][6][7][8][9].…”
Section: Introductionmentioning
confidence: 99%