Ultra-high capacity for three-dimensional optical data storage inside transparent fluorescent tape

Yuan, Xupeng; Zhao, Miao; Guo, Xia; Li, Yao; Yu, Yang; Gan, Zongsong; Ruan, Hao

doi:10.1364/ol.387278

Cited by 26 publications

(20 citation statements)

References 26 publications

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“…A femtosecond laser with a wavelength of 515 nm and beam spot size of ≈500 nm, at a repetition of 40 MHz with a 500-fs pulse width, was used to record information points on analog optical disc surface. [41,42] Computational Method: All first principles calculations were performed on the basis of the density functional theory, as carried out via the Vienna ab initio simulation package (VASP) code. [43,44] In addition, the generalized gradient approximation (GGA) by the Perdew-Burke-Ernzerhof (PBE) formulation was selected.…”

Section: Methodsmentioning

confidence: 99%

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Novel Co‐Doped Y₂GeO₅:Pr³⁺,Tb³⁺: Deep Trap Level Formation and Analog Binary Optical Storage with Submicron Information Points

Deng

Liu

Zhang

et al. 2021

Advanced Optical Materials

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Due to the limitation of 2D spatial resolution, traditional optical information storage technologies, such as optical discs, digital video discs, or Blu-ray discs, are facing increasing challenges. Recently, the fourth generation of ultracapacity optical data storage systems, like far-field super-resolution recording technology [4,5] and multiplexing technology, [6] has come into being. However, owing to the lack of suitable optical storage media, practical applications are still not possible. Herein, the study of new advanced optical materials is of great significance for application of optical information storage.As a potential optical information storage media, electron-trapping materials have attracted considerable attention, since Lindmayer disclosed a 3D optical memory system by utilizing electron-trapping materials in 1986. [7][8][9] When exposed to X-rays, ultraviolet (UV), or visible light, the data can be recorded by arresting the charge carriers in traps. Meanwhile, when stimulated by high-temperature or low-energy laser, data can be read out by releasing the captured charge carriers. Obviously, trap levels play an important role in electron-trapping materials toward optical information storage application. However, most materials with data stored in shallow traps are susceptible to thermal disturbance at room temperature, which greatly hinders its Optical information storage (OIS) is considered as one of the most promising data storage methods due to unique advantages of high security, long life, and low-energy consumption. Combination of optically stimulated luminescence of electron-trapping materials (ETMs) and advanced optical technology has been proved to be a feasible approach to break through physical limitations of traditional storage technology. However, inorganic ETMs are limited to laboratory research, and have not realized the submicron recording point of "microscopic" analog optical storage so far. In this work, an exemplary application of OIS employing inorganic ETMs by a custom-built optical system has been realized for the first time. Multidimensional triple traps are tailored through co-doping of selective rare-earth ions Tb 3+ into Pr 3+ -activated Y 2 GeO 5 . Furthermore, first principles calculations, combined with X-ray photoelectron spectroscopy and low-temperature electron spin resonance spectra, reveal the nature of trap levels. Remarkably, a {10 × 10} array of information points is automatically recorded in a bit-by-bit mode by a 515 nm femtosecond laser, then decoded by linear continuous scanning, and the emission spectrum between each two information points is detected to realize "0" and "1" in binary information. Hopefully, the present work can push forward practical application of inorganic ETMs in high-density and super-speed OIS.

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Section: Methodsmentioning

confidence: 99%

“…A femtosecond laser with a wavelength of 515 nm and beam spot size of ≈500 nm, at a repetition of 40 MHz with a 500‐fs pulse width, was used to record information points on analog optical disc surface. [ 41,42 ]…”

Section: Methodsmentioning

confidence: 99%

Novel Co‐Doped Y₂GeO₅:Pr³⁺,Tb³⁺: Deep Trap Level Formation and Analog Binary Optical Storage with Submicron Information Points

Deng

Liu

Zhang

et al. 2021

Advanced Optical Materials

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“…Recently, the luminescence industry is taken by solid state lighting, a lighting solution that applies non-polluting materials, better than conventional method in terms of efficiency and durability [1]. Out of many solid-state lighting options from organic light-emitting diode (OLED), quantum-dot light-emitting diode (QLED) to carbon-dot light-emitting diode (CLED), the light-emitting diode (LED) is always the optimal solution owing to better optical properties and therefore being applied in many different lighting applications [2]. Much like every other lighting solution, LED is constantly making changes to adapt to higher application demands of the industry, although the process is stagnant due to obstacles in color quality and light output enhancement [3].…”

Section: Introductionmentioning

confidence: 99%

Using flat phosphor layer in dual-layer remote phosphor configuration to improve luminous efficacy

Thi

That

2021

TELKOMNIKA

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The phosphor layer shape and components distances are the subjects proposed to advance the quality of WLEDs in this article. The two distances, between phosphor layers (d1) and between the phosphor layer and the LED chip (d2) in Flat dual-remote phosphor (FDRP) and Concave dual-remote phosphor (CDRP) were examined by experiments to determine their impacts on WLEDs lighting performances. The results suggest that FDRP is a better option than CDRP for lighting performance. In each respective structure, the distances influence the lighting capacity and color output whenever they fluctuate. Therefore, to effectively control and study this phenomenon, the correlated color temperature is maintained at 8500 K, and the concentration of phosphor material is altered while the distances are changing. When d1 and d2 are at the starting value of 0, the recorded lumen output and chromatic performance of lighting devices are the lowest and begin to increase as d1 and d2 expand. Bigger d1 and d2 mean bigger scattering area and better chromatic light integration, which leads to higher color quality. Detailed results present that optimal values of d1 or d2 for the highest lumen output of 1020 lm are 0.08 mm or 0.63 mm, respectively. Meanwhile the lowest color deviation is accomplished with d1=0.64 mm or d2=1.35 mm.

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“…The conformal coating method is proposed to supports color uniformity and leads to the uniformity of angular-dependent correlated color temperature (CCT) [6], but the light loss from backscattering effect prevents it from becoming the optimal solution. In attempts to achieve the higher luminescence for WLEDs to meet the lighting standard of solid- [7][8][9][10][11][12], a reflection structure that has an interior phosphor coating on polymer hemispherical shell lens to boost extraction efficiency, an air-gap embedded structure to boost luminous efficacy by reflecting downward light. In addition, limiting the loss of light from backscattering and enhance the dispersal of blue and yellow lights are crucial objectives in making greater quality WLEDs.…”

Section: Introductionmentioning

confidence: 99%

MgCeAl11O19:Tb3+ and Mg8Ge2O11F2:Mn4+ in enhancing the color quality of remote phosphor LED

Thi

That

2021

TELKOMNIKA

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As the name infers, the triple-layer remote phosphor (TRP) has 3 phosphor layers includes the red Mg8Ge2O11F2:Mn 4+ phosphor layer on the top, the green MgCeAl11O19:Tb 3+ phosphor layer in the middle, and the yellow YAG:Ce 3+ layer at the bottom and is mentioned as a solution to increase the chromaticity and luminescence adequacy of the white LEDs (WLEDs) in this article. As to control the red light for higher value achieve in the color rendering index (CRI), using red Mg8Ge2O11F2:Mn 4+ phosphor in the TRP structure is recommended. All the outcomes indicate that when red phosphor Mg8Ge2O11F2:Mn 4+ concentration grows the CRI gets higher values, and drastically declines when the concentration of green phosphor MgCeAl11O19:Tb 3+ increases. As the same time, applying the green MgCeAl11O19:Tb 3+ phosphor layer to manage the green light as it can make the luminous efficacy (LE) of WLEDs increase. In particular, the index of LE can also be improved over 40% by limiting the scatter of light and putting in green light. Moreover, to preserve the average correlated color temperature (ACCT) stable at 8500K, the yellow YAG:Ce 3+ concentration must be cut down as the concentration of red and green phosphor rise.

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Ultra-high capacity for three-dimensional optical data storage inside transparent fluorescent tape

Cited by 26 publications

References 26 publications

Novel Co‐Doped Y₂GeO₅:Pr³⁺,Tb³⁺: Deep Trap Level Formation and Analog Binary Optical Storage with Submicron Information Points

Novel Co‐Doped Y₂GeO₅:Pr³⁺,Tb³⁺: Deep Trap Level Formation and Analog Binary Optical Storage with Submicron Information Points

Using flat phosphor layer in dual-layer remote phosphor configuration to improve luminous efficacy

MgCeAl11O19:Tb3+ and Mg8Ge2O11F2:Mn4+ in enhancing the color quality of remote phosphor LED

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Ultra-high capacity for three-dimensional optical data storage inside transparent fluorescent tape

Cited by 26 publications

References 26 publications

Novel Co‐Doped Y2GeO5:Pr3+,Tb3+: Deep Trap Level Formation and Analog Binary Optical Storage with Submicron Information Points

Novel Co‐Doped Y2GeO5:Pr3+,Tb3+: Deep Trap Level Formation and Analog Binary Optical Storage with Submicron Information Points

Using flat phosphor layer in dual-layer remote phosphor configuration to improve luminous efficacy

MgCeAl11O19:Tb3+ and Mg8Ge2O11F2:Mn4+ in enhancing the color quality of remote phosphor LED

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Novel Co‐Doped Y₂GeO₅:Pr³⁺,Tb³⁺: Deep Trap Level Formation and Analog Binary Optical Storage with Submicron Information Points

Novel Co‐Doped Y₂GeO₅:Pr³⁺,Tb³⁺: Deep Trap Level Formation and Analog Binary Optical Storage with Submicron Information Points