Ultra-efficient generation of time-energy entangled photon pairs in a InGaP Photonic Crystal Cavity

Chopin, Alexandre; Barone, Andrea; Ghorbel, Inès; Combrié, Sylvain; Bajoni, Daniele; Raineri, Fabrice; Galli, Mattéo; Rossi, Alfredo De

doi:10.21203/rs.3.rs-2239044/v1

Cited by 4 publications

(4 citation statements)

References 37 publications

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“…Our results, including a maximum CAR > 600 for an onchip photon pair rate of (9 ± 1) × 10 3 pairs/s and pump power of 0.17 mW, a heralded g (2) (0) on the order of 10 −3 , and a visibility of two-photon interference fringe exceeding 99%, unequivocally prove that the entangled photon source based on the SiC integrated platform could be a key resource for chip-scale quantum information processing. In addition, these results are comparable to those obtained from more mature nonlinear integrated photonic platforms such as silicon 2,32 , silicon nitride (Si 3 N 4 ) [33][34][35] , aluminium gallium arsenide (AlGaAs) 36 , indium gallium phosphide (InGaP) 37 , and even lithium niobate 5,38,39 . In Table 1, we provide a selective comparison of SFWM-based entangled photon pair generation in various third-order nonlinear integrated photonic platforms.…”

Section: Discussionsupporting

confidence: 76%

Entangled photon pair generation in an integrated SiC platform

Rahmouni,

Wang,

et al. 2024

Light Sci Appl

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Entanglement plays a vital role in quantum information processing. Owing to its unique material properties, silicon carbide recently emerged as a promising candidate for the scalable implementation of advanced quantum information processing capabilities. To date, however, only entanglement of nuclear spins has been reported in silicon carbide, while an entangled photon source, whether it is based on bulk or chip-scale technologies, has remained elusive. Here, we report the demonstration of an entangled photon source in an integrated silicon carbide platform for the first time. Specifically, strongly correlated photon pairs are efficiently generated at the telecom C-band wavelength through implementing spontaneous four-wave mixing in a compact microring resonator in the 4H-silicon-carbide-on-insulator platform. The maximum coincidence-to-accidental ratio exceeds 600 at a pump power of 0.17 mW, corresponding to a pair generation rate of (9 ± 1) × 103 pairs/s. Energy-time entanglement is created and verified for such signal-idler photon pairs, with the two-photon interference fringes exhibiting a visibility larger than 99%. The heralded single-photon properties are also measured, with the heralded g(2)(0) on the order of 10−3, demonstrating the SiC platform as a prospective fully integrated, complementary metal-oxide-semiconductor compatible single-photon source for quantum applications.

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Section: Discussionsupporting

confidence: 76%

Entangled photon pair generation in an integrated SiC platform

Rahmouni,

Wang,

et al. 2024

Light Sci Appl

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“…Our results, including a maximum coincidence-to-accidental ratio > 600 at on-chip photon pair rate of (9 ± 1) × 10 3 pairs/s and pump power of 0.17 mW, a heralded 𝑔 (2) (0) on the order of 10 −3 , and a visibility of two-photon interference fringe exceeding 99%, unequivocally prove that the entangled photon source based on the SiC integrated platform could be a key resource for chip-scale quantum information processing. In addition, these results are comparable to those obtained from more mature nonlinear integrated photonic platforms such as silicon [2,30], silicon nitride (Si 3 N 4 ) [31ś33], aluminium gallium arsenide (AlGaAs) [34], indium gallium phosphide (InGaP) [35], or even lithium niobate [5,36,37]. In Table 1, we provide a selective comparison of SFWM-based entangled photon pair generation in various third-order nonlinear integrated photonic platforms.…”

Section: Discussionsupporting

confidence: 69%

Entangled photon pair generation in an integrated SiC platform

Ma,

Wang,

et al. 2024

Preprint

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Entanglement plays a vital role in quantum information processing. Owing to its unique material properties, silicon carbide recently emerged as a promising candidate for the scalable implementation of advanced quantum information processing capabilities. To date, however, only entanglement of nuclear spins has been reported in silicon carbide, while an entangled photon source, whether it is based on bulk or chip-scale technologies, remains elusive. Here, we report the demonstration of an entangled photon source in an integrated silicon carbide platform for the first time. Specifically, strongly correlated photon pairs are efficiently generated at the telecom C-band wavelength through implementing spontaneous four-wave mixing in a compact microring resonator in the 4H-silicon-carbide-on-insulator platform. The maximum coincidence-to-accidental ratio exceeds 600 at a pump power of 0.17 mW, corresponding to a pair generation rate of 9×103 pairs/s. Energy-time entanglement is created and verified for such signal-idler photon pairs, with the two-photon interference fringes exhibiting a visibility larger than 99%. The heralded single-photon properties are also measured, with the heralded g(2)(0)on the order of 10-3, demonstrating the SiC platform as a prospective fully integrated, CMOS-compatible single-photon source for quantum applications.

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“…The proposed scheme capitalizes on the strong near-field enhancement associated with confined plasmons in ultrathin films to boost the light-matter interaction and excite multiple guided modes. We anticipate that the entangled plasmon pairs (and photon pairs after subsequent out-coupling) generated with this procedure under attainable experimental conditions are advantageous compared to existing photonic devices ( 40 ) (e.g., we estimate ~100 MHz entangled pair generation rates in our calculations below). In addition, the generation process guarantees a high degree of synchronization between the two generated plasmons.…”

Section: Introductionmentioning

confidence: 99%

Generation of entangled waveguided photon pairs by free electrons

Rasmussen,

Echarri,

Cox

et al. 2024

Sci. Adv.

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Entangled photons are a key resource in quantum technologies. While intense laser light propagating in nonlinear crystals is conventionally used to generate entangled photons, such schemes have low efficiency due to the weak nonlinear response of known materials and losses associated with in/out photon coupling. Here, we show how to generate entangled polariton pairs directly within optical waveguides using free electrons. The measured energy loss of undeflected electrons heralds the production of counter-propagating polariton pairs entangled in energy and emission direction. For illustration, we study the excitation of plasmon polaritons in metal strip waveguides that strongly enhance light-matter interactions, rendering two-plasmon generation dominant over single-plasmon excitation. We demonstrate that electron energy losses detected within optimal frequency ranges can reliably signal the generation of plasmon pairs entangled in energy and momentum. Our proposed scheme is directly applicable to other types of optical waveguides for in situ generation of entangled photon pairs.

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Ultra-efficient generation of time-energy entangled photon pairs in a InGaP Photonic Crystal Cavity

Cited by 4 publications

References 37 publications

Entangled photon pair generation in an integrated SiC platform

Entangled photon pair generation in an integrated SiC platform

Entangled photon pair generation in an integrated SiC platform

Generation of entangled waveguided photon pairs by free electrons

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