Ultra-compact silicon photonic devices reconfigured by an optically induced semiconductor-to-metal transition

Ryckman, Judson D.; Hallman, Kent A.; Marvel, Robert E.; Haglund, Richard F.; Weiss, Sharon M.

doi:10.1364/oe.21.010753

Cited by 109 publications

(68 citation statements)

References 46 publications

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“…1 VO 2 shows unique transformation of structural, electronic, and optical properties above room temperature, at T c ' 340 K. [1][2][3][4][5][6][7][8] Upon heating, VO 2 undergoes a first-order insulator-to-metal phase transition (PT) with reversible change of monoclinic symmetry to tetragonal one. A number of studies were focused on sizedependent transition in isolated nanoparticles and film grains due to importance of fundamental processes involved in the PT dynamics and prospective technological use of VO 2 -based materials.…”

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confidence: 99%

Light scattering by epitaxial VO2 films near the metal-insulator transition point

Lysenko

Fernández

Rúa

et al. 2015

Journal of Applied Physics

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Articles you may be interested inImproved metal-insulator-transition characteristics of ultrathin VO2 epitaxial films by optimized surface preparation of rutile TiO2 substrates Appl. Phys. Lett.Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films Increased metal-insulator transition temperatures in epitaxial thin films of V 2 O 3 prepared in reduced oxygen environments Appl. Phys. Lett. 98, 152105 (2011); 10.1063/1.3574910 Metal-insulator transition in epitaxial V 1 − x W x O 2 ( 0 ≤ x ≤ 0.33 ) thin films Appl. Phys. Lett. 96, 022102 (2010);Experimental observation of metal-insulator transition in epitaxial films of vanadium dioxide is reported. Hemispherical angle-resolved light scattering technique is applied for statistical analysis of the phase transition processes on mesoscale. It is shown that the thermal hysteresis strongly depends on spatial frequency of surface irregularities. The transformation of scattering indicatrix depends on sample morphology and is principally different for the thin films with higher internal elastic strain and for the thicker films where this strain is suppressed by introduction of misfit dislocations. The evolution of scattering indicatrix, fractal dimension, surface power spectral density, and surface autocorrelation function demonstrates distinctive behavior which elucidates the influence of structural defects and strain on thermal hysteresis, twinning of microcrystallites, and domain formation during the phase transition. V C 2015 AIP Publishing LLC.

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confidence: 99%

Light scattering by epitaxial VO2 films near the metal-insulator transition point

Lysenko

Fernández

Rúa

et al. 2015

Journal of Applied Physics

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“…The decreased modal index leads to a blueshift of the resonant wavelength of the ring, as demonstrated in previous all optical measurements. [18,19] Figures 3a and 3c indeed show blueshifted resonances when VO 2 switches from the monoclinic to rutile state. A larger blueshift is observed with the larger VO 2 patch and we believe the entire VO 2 patch is being switched in both cases, as discussed in the next paragraph.…”

Section: Analysis and Discussionmentioning

confidence: 82%

Hybrid silicon-vanadium dioxide electro-optic modulators

et al. 2016

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Small-footprint, low-power devices that can modulate optical signals at THz speeds would transform next-generation onchip photonics. We describe a hybrid silicon-vanadium dioxide (Si-VO 2 ) electro-optic ring resonator modulator as a candidate platform for achieving this performance benchmark. Vanadium dioxide (VO 2 ) is a strongly correlated material exhibiting a semiconductor-to-metal transition (SMT) accompanied by large changes in electrical and optical properties. While VO 2 can be switched optically on a sub-picosecond time scale, the ultimate electrical switching speed remains to be determined. In a 5 µm radius Si-VO 2 ring resonator, we achieve 1.5 dB modulation in response to a 10 ns square voltage pulse of 2.5 V. In the steady state regime, we report a modulation depth of 10 dB. The larger modulation depth at longer timescales is attributed to a Joule heating contribution. Experimental results, corroborated by FDTD simulations, reveal the relationship between the portion of a VO 2 patch undergoing the SMT and the resulting effects on the Si-VO 2 device performance. This work indicates that with further reduction of VO 2 patch sizes and increase in resonator Q factor, there is promise for the Si-VO 2 ring resonator electro-optic modulator as a competitive option for on-chip photonics technology.

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“…All‐optical switching, with its large bandwidth and ultrafast response times, can enable the next generation of switchable devices for communication systems. Previous demonstrations of all‐optical switching have involved complex metasurfaces, ENZ films, high‐Q resonant cavities, and other processes mostly employing a single wavelength probe. Here, we demonstrate simultaneous broadband responses in the NIR and the MIR frequencies by employing interband pumping.…”

Section: Resultsmentioning

confidence: 99%

Broadband, High‐Speed, and Large‐Amplitude Dynamic Optical Switching with Yttrium‐Doped Cadmium Oxide

Saha

Diroll

Shank

et al. 2019

Adv Funct Materials

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Transparent conducting oxides, such as doped indium oxide, zinc oxide, and cadmium oxide (CdO), have recently attracted attention as tailorable materials for applications in nanophotonic and plasmonic devices such as low‐loss modulators and all‐optical switches due to their tunable optical properties, fast optical response, and low losses. In this work, optically induced extraordinarily large reflection changes (up to 135%) are demonstrated in bulk CdO films in the mid‐infrared wavelength range close to the epsilon near zero (ENZ) point. To develop a better understanding of how doping level affects the static and dynamic optical properties of CdO, the evolution of the optical properties with yttrium (Y) doping is investigated. An increase in the metallicity and a blueshift of the ENZ point with increasing Y‐concentrations is observed. Broadband all‐optical switching from near‐infrared to mid‐infrared wavelengths is demonstrated. The major photoexcited carrier relaxation mechanisms in CdO are identified and it is shown that the relaxation times can be significantly reduced by increasing the dopant concentration in the film. This work could pave the way to practical dynamic and passive optical and plasmonic devices with doped CdO spanning wavelengths from the ultraviolet to the mid‐infrared region.

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Ultra-compact silicon photonic devices reconfigured by an optically induced semiconductor-to-metal transition

Cited by 109 publications

References 46 publications

Light scattering by epitaxial VO2 films near the metal-insulator transition point

Light scattering by epitaxial VO2 films near the metal-insulator transition point

Hybrid silicon-vanadium dioxide electro-optic modulators

Broadband, High‐Speed, and Large‐Amplitude Dynamic Optical Switching with Yttrium‐Doped Cadmium Oxide

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