2020
DOI: 10.1016/j.optcom.2020.125835
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Ultra-broadband wide-angle terahertz absorber realized by a doped silicon metamaterial

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Cited by 44 publications
(9 citation statements)
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“…36,37 Apart from structures, the materials also have a high effect on the absorber bandwidth. The normal used silicon can achieve a large bandwidth from 0.7 to 5.7 THz according to the simulation, 38 while the emerging vanadium dioxide can realize the absorptance >90% from 3.25 to 7.08 THz. 39 What is more, vanadium dioxide can be employed to control the absorption in a large band.…”
Section: Introductionmentioning
confidence: 92%
“…36,37 Apart from structures, the materials also have a high effect on the absorber bandwidth. The normal used silicon can achieve a large bandwidth from 0.7 to 5.7 THz according to the simulation, 38 while the emerging vanadium dioxide can realize the absorptance >90% from 3.25 to 7.08 THz. 39 What is more, vanadium dioxide can be employed to control the absorption in a large band.…”
Section: Introductionmentioning
confidence: 92%
“…The fourth is a three-layer, multi-layer, or all-dielectric structure, for which the unit cells are made of materials with low conductivity or with tunable conductivity. [53][54][55][56][57][58] Hu et al employed Cr with a conductivity of only 2.2 × 10 5 S m −1 as the material for the metal ring resonator (Figure 6g). [55] The low conductivity makes the captured energy mainly consumed in the resonators, which greatly expands bandwidth of the single absorption band.…”
Section: Broadband Tmasmentioning
confidence: 99%
“…If resonant absorption peaks from each component are very close, an ideal broadband absorption peak can be formed [5]. Broadband absorbers are also demonstrated based on doped silicon [6] and vanadium dioxide metamaterials [7]. However, it is very difficult to actively change the working frequencies of such multiband and broadband absorbers, which hinders their practical applications.…”
Section: Introductionmentioning
confidence: 99%