Ultra-broadband THz/IR upconversion and photovoltaic response in semiconductor ratchet-based upconverter

Bai, Pei Kang; Chu, Weidong; Zhang, Yueheng; Shen, Wei; Fu, Zhanglong; Shao, Dixiang; Zhou, Kang; Tan, Zhongxin; Li, Hua; Cao, Juncheng; Li, Lianhe; Linfield, Edmund H.; Xie, Yan; Zhao, Ziran

doi:10.1063/5.0070520

Cited by 12 publications

(7 citation statements)

References 34 publications

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“…We would also like to discuss some other approaches to the development of THz-to-IR converters. Bai et al 107 . demonstrated an ultrabroadband upconversion device, based on the integrated p-type GaAs/AlxGa1−x As ratchet photodetector and GaAs double heterojunction LED.…”

Section: Discussionmentioning

confidence: 99%

“…We would also like to discuss some other approaches to the development of THz-to-IR converters. Bai et al 107 demonstrated an ultrabroadband upconversion device, based on the integrated p-type GaAs∕Al x Ga 1−x As ratchet photodetector and GaAs double heterojunction LED. However, its photoresponse range, spanning from THz to NIR (4 to 200 THz), by far exceeded the frequencies suitable for biomedical research, e.g., 0.35 to 0.55 THz, capable to provide contrast margin of the cancerous tissue.…”

Section: Discussionmentioning

confidence: 99%

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Terahertz-to-infrared converters for imaging the human skin cancer: challenges and feasibility

et al. 2023

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Purpose: Terahertz (THz) medical imaging is a promising noninvasive technique for monitoring the skin's conditions, early detection of the human skin cancer, and recovery from burns and wounds. It can be applied for visualization of the healing process directly through clinical dressings and restorative ointments, minimizing the frequency of dressing changes. The THz imaging technique is cost effective, as compared to the magnetic resonance method. Our aim was to develop an approach capable of providing better image resolution than the commercially available THz imaging cameras.Approach: The terahertz-to-infrared (THz-to-IR) converters can visualize the human skin cancer by converting the latter's specific contrast patterns recognizable in THz radiation range into IR patterns, detectable by a standard IR imaging camera. At the core of suggested THz-to-IR converters are flat matrices transparent both in the THz range to be visualized and in the operating range of the IR camera, these matrices contain embedded metal nanoparticles (NPs), which, when irradiated with THz rays, convert the energy of THz photons into heat and become nanosources of IR radiation detectable by an IR camera. Results:The ways of creating the simplest converter, as well as a more complex converter with wider capabilities, are considered. The first converter is a gelatin matrix with gold 8.5-nm diameter NPs, and the second is a polystyrene matrix with 2-nm diameter NPs from copper-nickel MONEL ® alloy 404.Conclusions: An approach with a THz-to-IR converter equipped with an IR camera is promising in that it could provide a better image of oncological pathology than the commercially available THz imaging cameras do.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Terahertz-to-infrared converters for imaging the human skin cancer: challenges and feasibility

et al. 2023

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“…The high quality of homoepitaxial GaAs is required for e.g. spintronic devices, , ultra-height quality two-dimensional electron gas, an ultrabroadband upconversion device, or next-generation high-energy particle tracking detectors …”

Section: Introductionmentioning

confidence: 99%

“…The high quality of homoepitaxial GaAs is required for e.g. spintronic devices, 8,9 ultra-height quality two-dimensional electron gas, 10 an ultrabroadband upconversion device, 11 or next-generation high-energy particle tracking detectors. 12 In this work, we present procedure of initial growth parameters determination for obtaining homoepitaxial GaAs layers after MBE maintenance, which may standardize the process and minimize time to achieve the required outcome.…”

Section: Introductionmentioning

confidence: 99%

Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor

Jarosz,

Stachowicz,

Krzeminski

et al. 2023

ACS Omega

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The molecular beam epitaxy (MBE) technique is renowned as the most suitable for the growth of high-quality crystalline materials and nanostructures such as GaAs. However, once established, optimal growth parameters required for repeatability of top-quality structures may be easily lost as MBE is highly sensitive to any changes in the system. Especially, routine servicing procedures, which include any activity which requires unsealing of the growth chamber, are devastating for developed growth parameters and force the necessity of recalibration. In this work, we present the process of growth parameter pre-optimization for obtaining homoepitaxial GaAs layers after servicing and restarting the MBE system. Namely, we present how each step of reestablishing optimal growth condition influences various characteristics of obtained GaAs layers. Those include in situ, structural, and spectral measurement techniques. An additional aspect was to compare the optimal conditions for the growth of homoepitaxial GaAs layers from two growth campaigns in which the main difference is the addition of an ion pump and increasing the temperature gradient on the Ga cell.

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“…detectors attract more and more attention because they can obtain more information and are a crucial part of THz multicolor imaging and up-converter [4,5]. High-performance broadband THz detectors covering 1-10 THz are especially of great interest and is critically required for most application.…”

Section: Introductionmentioning

confidence: 99%

E-shaped patch antenna for GaAs-based broadband THz detectors

Lian¹,

Wang²,

Bai³

et al. 2022

J. Phys. D: Appl. Phys.

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High-performance broadband Terahertz (THz) photodetectors are of great interest driven by lots of applications. To improve the performance of the THz photodetector in a wide spectral coverage, the E-shaped patch antenna with three slots is proposed and studied in theory. GaAs-based homojunction interfacial work function internal photoemission (HIWIP) broadband THz detector is used as an example to demonstrate the effect in broadband detection. Due to the combined effect of the antenna and the microcavity, E-shaped patch antenna microcavity HIWIP increase the optical coupling efficiency in a broadband range from 2.1-20 THz by an average of four times. Considering the requirement to reduce the dark current, the etched E-shaped patch antenna microcavity HIWIP only retaining the active region beneath the antenna is further investigated. In contrast to the reference HIWIP, the coupling efficiency is improved by an average of 15 times in 2.3-20 THz. The high coupling efficiency of both structures leads to the significant improvement of the responsivity, NEP, and detectivity in a wide spectral coverage theoretically, which makes it possible to realize higher operating temperatures. Such a design scheme of E-shaped patch antenna structure provides a guideline for broadband THz detectors and can be used for other THz detectors.

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Ultra-broadband THz/IR upconversion and photovoltaic response in semiconductor ratchet-based upconverter

Cited by 12 publications

References 34 publications

Terahertz-to-infrared converters for imaging the human skin cancer: challenges and feasibility

Terahertz-to-infrared converters for imaging the human skin cancer: challenges and feasibility

Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor

E-shaped patch antenna for GaAs-based broadband THz detectors

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