Ultra-broadband photodetection based on two-dimensional layered Ta2NiSe5 with strong anisotropy and high responsivity

Zhang, Yan; Yu, Wenzhi; Li, Jie; Chen, Jie; Dong, Zhuo; Xie, Liang; Li, Chang; Shi, Xueling; Guo, Wanlong; Lin, Shang; Mokkapati, Sudha; Zhang, Kai

doi:10.1016/j.matdes.2021.109894

Cited by 42 publications

(39 citation statements)

References 34 publications

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“…The photodetectors fabricated on the exfoliated R-ZIS flakes exhibit a broadband photoresponse from near UV to visible light. Unlike photodetectors based on other 2D ternary materials (e.g., Ta 2 NiSe 5 , 32 Bi 2 O 2 Se 33 and ZrGeTe 4 34 ) that usually suffer from large dark currents, meaning increased power consumption and reduced optoelectronic performance, the R-ZIS devices show an extremely low dark current (7 pA at 5 V bias) at room temperature. The superior performance represented by a series of parameters, that is, specific detectivity (1.8 × 10 14 Jones), responsivity (230 A W −1 ), response time (τ rise = 222 μs, τ decay = 158 μs) and external quantum efficiency (6.12 × 10 4 %) for a 405 nm laser, surpasses most documented 2D counterparts.…”

Section: ■ Introductionmentioning

confidence: 99%

Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn₂S₄ for Optical Neural Networks

Zhen

Zhou

Weng

et al. 2022

ACS Appl. Mater. Interfaces

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The demand for high-performance semiconductors in electronics and optoelectronics has prompted the expansion of low-dimensional materials research to ternary compounds. However, photodetectors based on 2D ternary materials usually suffer from large dark currents and slow response, which means increased power consumption and reduced performance.Here we report a systematic study of the optoelectronic properties of well-characterized rhombohedral ZnIn2S4 (R-ZIS) nanosheets which exhibit an extremely low dark current (7 pA at 5 2 V bias). The superior performance represented by a series of parameters surpasses most 2D counterparts. The ultrahigh specific detectivity (1.8 × 10 14 Jones), comparably short response time (τrise = 222 µs, τdecay = 158 µs) and compatibility with high-frequency operation (1000 Hz) are particularly prominent. Moreover, a gate-tunable characteristic is observed, which is attributed to photogating and improves the photoresponse by two orders of magnitude. Gating technique can effectively modulate the photocurrent-generation mechanism from photoconductive effect to dominant photogating. The combination of ultrahigh sensitivity, ultrafast response and high gate tunability makes the R-ZIS phototransistor an ideal device for low-energy-consumption and highfrequency optoelectronic applications, which is further demonstrated by its excellent performance in optical neural networks and promising potential in optical deep learning and computing.

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Section: ■ Introductionmentioning

confidence: 99%

Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn₂S₄ for Optical Neural Networks

Zhen

Zhou

Weng

et al. 2022

ACS Appl. Mater. Interfaces

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“…[14][15][16] This offers an excellent opportunity to examine potential NIR applications. [17][18][19] However, atomically thin 2D materials exhibit very inefficient photon-trapping, which hinders high-performance optoelectronic device applications, especially ultrasensitive and low-energy consumption devices. Efforts to overcome these limitations include surface passivation, phase-pattern engineering, and hybrid photodetectors.…”

mentioning

confidence: 99%

Perovskite Quantum Dot‐Ta₂NiSe₅ Mixed‐Dimensional Van Der Waals Heterostructures for High‐Performance Near‐Infrared Photodetection

Qiao

Feng

Song

et al. 2021

Adv Funct Materials

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2D materials and their van der Waals heterostructures are of great fundamental interest and have potential applications in emerging electronics devices. However, atomically thin photodetector applications have suffered from performance limitations because of low optical absorption. Here, a near-infrared photodetector based on methylammonium lead halide perovskite quantum dots (MQDs), combined with Ta 2 NiSe 5 van der Waals heterostructures, is fabricated to take advantage of their energy band alignment. An ultrasensitive photoresponse with a detectivity of 6.0 × 10 12 Jones for 800 nm illumination is demonstrated. Furthermore, the field-effect mobility and responsivity are enhanced by factors of 2 and 7.4, respectively, by interfacing Ta 2 NiSe 5 and the MQDs. These results indicate that the optoelectrical properties of 2D ternary Ta 2 NiSe 5 can be significantly optimized via hybridization with MQDs and can accelerate the evolution of MQD-van der Waals heterostructure-based devices.

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“…Recently, ternary layered semiconductors have been successfully introduced into the in‐plane anisotropic layered materials family, which has attracted significant attention due to their extended freedom deriving from the diverse elemental compounds. [ 12–19 ] The variable stoichiometry in semiconductors can significantly affect the band structures, phonon vibration, lattice symmetry, and carrier transport properties. Such fundamental physical properties are highly dependent on composition, which has prompted many researchers to modulate and optimize material properties through tunning chemical compositions.…”

Section: Introductionmentioning

confidence: 99%

Cation‐Alloying‐Induced Blue‐Shifted and Wide‐Spectrum Polarization‐Sensitive Photodetection in Quasi‐1D SbBiS₃

et al. 2022

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The in-plane anisotropic properties of quasi-1D layered materials induced by intrinsically low symmetry structure and external geometry morphology have attracted tremendous attention owing to their extensive applications, such as polarizationsensitive photodetectors and direct polarimetric image sensors. [1][2][3][4][5] Until now, only a few quasi-1D layered materials with intrinsic low-symmetry crystal structure were reported, such as antimony trisulfide (Sb 2 S 3 ), [6] antimony triselenide (Sb 2 Se 3 ), [7] bismuth sulfide (Bi 2 S 3 ), [8] tellurium (Te), [9] zirconium trisulfide (ZrS 3 ), [10] and tin sulfide (Sn II Sn III S 3 ) . [11] However, most reported quasi-1D layered materials are based on elementary or binary materials, which is insufficient to fulfill the growing demand for high-performance polarization-sensitive photodetection applications. Therefore, it is urgent to explore new in-plane anisotropic quasi-1D layered materials with low-symmetry structures for fundamental research and optoelectronics applications. Recently, ternary layered semiconductors have been successfully introduced into the in-plane anisotropic layered materials family, which has attracted significant attention due to their extended freedom deriving from the diverse elemental compounds. [12][13][14][15][16][17][18][19] The variable stoichiometry in semiconductors can significantly affect the band structures, phonon vibration, lattice symmetry, and carrier transport properties. Such fundamental physical properties are highly dependent on composition, which has prompted many researchers to modulate and optimize material properties through tunning chemical compositions. [20,21] Until now, alloying is an effective and widely used method to tailor physical properties in a broad range without breaking the structural integrity. [22,23] The crystal structures of Sb 2 S 3 and Bi 2 S 3 are similar, and the difference in orthorhombic unit cells is at most 3.5%, which implies the possibility for solid solubility between the two phases. [24] In addition, Sb and Bi atoms both belong to group VA, and have similar atomic orbitals. Most of the reported ternary Sb-Bi-S compound are focused on photoelectrocatalysis, [25] photoconductivity, [26] and sodium-ion battery. [27,28] As far as we know, ternary antimony bismuth sulfide (SbBiS 3 ) is a layered in-plane anisotropic semiconductor, with Sb or Bi atoms bonded to S atoms and forming chain-like puckered orthorhombic structures, which is expected to be a candidate for polarizationsensitive photodetector. However, the experimental and theoretical research on the intrinsic optical and optoelectronic properties of SbBiS 3 is still absent, especially in polarizationsensitive photodetection.In this work, quasi-1D SbBiS 3 nanowires were successfully exfoliated from high-quality bulk SbBiS 3 ribbon-like crystals. The quasi-1D morphology, orthorhombic structure and layered stacking were confirmed by transmission electron microscope (TEM) and electron diffraction. The basic characterizations

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Ultra-broadband photodetection based on two-dimensional layered Ta2NiSe5 with strong anisotropy and high responsivity

Cited by 42 publications

References 34 publications

Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn₂S₄ for Optical Neural Networks

Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn₂S₄ for Optical Neural Networks

Perovskite Quantum Dot‐Ta₂NiSe₅ Mixed‐Dimensional Van Der Waals Heterostructures for High‐Performance Near‐Infrared Photodetection

Cation‐Alloying‐Induced Blue‐Shifted and Wide‐Spectrum Polarization‐Sensitive Photodetection in Quasi‐1D SbBiS₃

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Ultra-broadband photodetection based on two-dimensional layered Ta2NiSe5 with strong anisotropy and high responsivity

Cited by 42 publications

References 34 publications

Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn2S4 for Optical Neural Networks

Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn2S4 for Optical Neural Networks

Perovskite Quantum Dot‐Ta2NiSe5 Mixed‐Dimensional Van Der Waals Heterostructures for High‐Performance Near‐Infrared Photodetection

Cation‐Alloying‐Induced Blue‐Shifted and Wide‐Spectrum Polarization‐Sensitive Photodetection in Quasi‐1D SbBiS3

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Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn₂S₄ for Optical Neural Networks

Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn₂S₄ for Optical Neural Networks

Perovskite Quantum Dot‐Ta₂NiSe₅ Mixed‐Dimensional Van Der Waals Heterostructures for High‐Performance Near‐Infrared Photodetection

Cation‐Alloying‐Induced Blue‐Shifted and Wide‐Spectrum Polarization‐Sensitive Photodetection in Quasi‐1D SbBiS₃