Ultra-broadband optical amplification at telecommunication wavelengths achieved by bismuth-activated lead iodide perovskites

Abstract

It is extremely difficult to achieve hybrid halide perovskite semiconductors with luminescence at wavelengths longer than 1.0 μm, because of the inherent limitation of their band gaps. We show herein that solution-processable, Bi-activated, high-quality MAPbI3 films can be adopted as a new gain medium operating in the whole telecommunication window of 1260–1625 nm. Additionally, the structural and optical properties of Bi doped MAPbI3 have been investigated. The results indicate that the NIR PL originates from the structural defects induced by Bi. Finally, we accomplished optical amplification in the whole telecommunication window by using Bi-doped MAPbI3 films, which represents the first work where such a performance is attained among lead halide perovskites and Bi-doped photonic films. This work opens up exciting possibilities of using perovskite semiconducting materials as gain media for optical amplifiers and lasers operating in the telecommunication window

Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band

“…Figure 1h shows the steady-state photoluminescence (PL) spectrum of the constructed perovskite layer. The peak wavelength is located at 765 nm, which is consistent with previous results 27–31 . For comparison, devices based on pristine perovskite and germanium active layers have been fabricated.…”

“…The CH 3 NH 3 PbI 3 perovskite thin film can be easily synthesized, which has excellent advantages such as a direct bandgap 24 , long charge carrier diffusion length 25 , low recombination rate and high absorption coefficient in the Vis light range 26 . Its application in the areas of optical amplification 27 , nonlinear optical areas 28 , and light-emitting diodes 29 has been studied. In the last two decades, the CH 3 NH 3 PbI 3 thin film has been mostly explored as light harvester of a solar cell 30,31 , which has an energy-conversion efficiency of over 25% 32 .…”

Low‐Dimensional Perovskites: From Synthesis to Stability in Perovskite Solar Cells

“…Recently, organic-inorganic metal halide perovskites have attracted much interest from the scientific community for various applications, including solar cells, [1][2][3][4][5][6][7][8][9][10][11][12] lasers, [13][14][15] light emitting diodes (LED), [16][17][18] water splitting, [19,20] photodetectors, [21][22][23][24][25] field-effect transistors, [26][27][28][29][30] nonvolatile memory, [31,32] capacitors, [33] battery, [34,35] optical amplifiers, [36] lasing, [37][38][39] and laser cooling. [40] They are now considered the most exceptional materials due to their high efficiency and ease in fabrication, and the materials used to form perovskite are extensively available and inexpensive.…”

Gemischte Gruppe‐14‐15‐Metallate als Modellverbindungen für dotierte Bleihalogenidperowskite

“…Noch bleibt allerdings unklar, wie die überschüssige Ladung von Bi 3+ unter verschiedenen Synthesebedingungen durch zusätzliche Defekte kompensiert wird [33–35] . Trotz dieser offenen Fragen konnte gezeigt werden, dass durch Sb‐ und Bi‐Dotierungen neue nützliche Eigenschaften in Bleihalogenidperowskiten generiert werden können, wie etwa Photolumineszenz im nahen Infrarotbereich, [36, 37] gesteigerte Photolumineszenz‐Quantenausbeuten in blau emittierenden CsPbBr 3 Nanokristallen, [38] verbesserte thermoelektrische Eigenschaften [39] und dass Codotierungen helfen können, die Defektbildung, hervorgerufen durch den Ladungsunterschied zwischen Pb 2+ und Sb 3+ oder Bi 3+ , zu vermeiden [40] . Zusammenfassend kann festgehalten werden, dass Modellverbindungen mit der gleichen Koordinationssphäre, wie sie in APbX 3 :E vermutet wird, dringend benötigt werden, um die oben genannten Effekte näher zu beleuchten und aufzuklären.…”