Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide

Li, Huamin; Lee, Dae-Yeong; Qu, Deshun; Liu, Xiaochi; Ryu, Jungjin; Seabaugh, Alan; Yoo, Won Jong

doi:10.1038/ncomms7564

Cited by 300 publications

(289 citation statements)

References 46 publications

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“…The responsivity decreases nonlinearly with the increasing light intensity, which is correlated to the decrease of unoccupied states in the conduction band of MoS 2 as light intensity increases38. The excellent responsivity of ∼308 mA W −1 at zero bias is much larger than that of other 2D homojunctions by chemical doping (Supplementary Table 1)459103940. It can be attributed to the wide space charge regions of the homojunction diode of ∼150 meV barrier height.…”

Section: Resultsmentioning

confidence: 95%

Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode

et al. 2017

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We establish a powerful poly(4-styrenesulfonate) (PSS)-treated strategy for sulfur vacancy healing in monolayer MoS2 to precisely and steadily tune its electronic state. The self-healing mechanism, in which the sulfur vacancies are healed spontaneously by the sulfur adatom clusters on the MoS2 surface through a PSS-induced hydrogenation process, is proposed and demonstrated systematically. The electron concentration of the self-healed MoS2 dramatically decreased by 643 times, leading to a work function enhancement of ∼150 meV. This strategy is employed to fabricate a high performance lateral monolayer MoS2 homojunction which presents a perfect rectifying behaviour, excellent photoresponsivity of ∼308 mA W−1 and outstanding air-stability after two months. Unlike previous chemical doping, the lattice defect-induced local fields are eliminated during the process of the sulfur vacancy self-healing to largely improve the homojunction performance. Our findings demonstrate a promising and facile strategy in 2D material electronic state modulation for the development of next-generation electronics and optoelectronics.

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Section: Resultsmentioning

confidence: 95%

Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode

et al. 2017

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“…Because of the geometry of the atomically thin MoS 2 , a tunneling current is easily formed in the as-fabricated p-n heterojunction at a negative voltage bias. 31 Remarkably, the reverse tunneling current in the presented image is so large that it is comparable with the forward current. The correlated electric transport curve can be classified into four regions: (1) reverse tunneling region, (2) saturation current region, (3) ideal linear diode region, and (4) series-resistancedominated region.…”

Section: Fabrication Of the P-n Heterojunction Diodementioning

confidence: 65%

“…In the case of region '1', at a low reverse bias, the electric-field-induced band bending is not severe and the direct tunneling (DT) modulates the carrier transport. 31,32 The relationship between the DT current and reverse bias is almost linear. In contrast, the junction barrier is further thinned by electric-field-induced band bending at a high reverse bias and Fowler-Nordheim tunneling (FNT) dominates the transport.…”

Section: Fabrication Of the P-n Heterojunction Diodementioning

confidence: 99%

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Enhanced photoresponsivity of the MoS2-GaN heterojunction diode via the piezo-phototronic effect

et al. 2017

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Combining layered MoS 2 flakes with conventional 3D semiconductors is a feasible route to fabricate high-quality heterojunction devices by harnessing the advantages of both materials. Here, we present a pressure-modulated heterojunction photodiode that is composed of an n-type multilayer MoS 2 and a p-type GaN film via the piezo-phototronic effect. Under the illumination of 365 nm incident light, a strong photoresponse is observed with response and recovery times of~66 and 74 ms, respectively. Under a pressure of 258 MPa, the photoresponsivity of this photodiode can be tuned by the piezo-phototronic effect arising from the GaN film to~3.5 times. Because of the lowered junction barrier with an applied external pressure (strain), more photogenerated carriers can successfully pass through the junction area without recombination, which results in an enhancement effect. This work provides a possible path for the implementation of high-performance electronic and optoelectronic devices that are based on hybrid heterostructures via human interfacing.

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“…Electronic and optoelectric devices utilizing CPP transport benefit from the ultra-short conducting channels; the length of conducting channels is on the order of layer thickness of 2D materials. Examples of CPP devices include graphene-based vertical transistors 23,24 and photo-detectors 25,26 , interlayer tunneling transistors 27 and p-n vertical junctions 28 .…”

Section: -21mentioning

confidence: 99%

Comparative investigation of electronic transport across three-dimensional nanojunctions

et al. 2017

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We show the thickness dependent transition from metallic conduction to tunneling in threedimensional (3D) Ag/Si/Ag nano-junctions through layer-by-layer electronic structure and quantum transport calculations. The transmission coefficients are calculated quantum mechanically within the framework of density functional theory in conjunction with non-equilibrium Green's function techniques. Thin junctions show nearly metallic character with no energy gap opening in Si layers due to the metal-induced interface states, and the transmission is independent of the stacking order of Si layers. Energy gap reemerges for Si layers deeply buried within thick junction, and the decay rate of transmission in this insulating region depends on the stacking order. Complex band analysis indicates that the decay of transmission is not determined by a single exponential constant but also depends on the available number of evanescent states. Calculating the electric resistance from the transmission coefficient requires a 3D generalization of the Landauer formula, which is not unique. We examine two approaches, the Landauer-Büttiker formula, with and without subtraction of the Sharvin resistance, and a semi-classical Boltzmann equation with boundary conditions defined by the transmission coefficients at the junction. We identify an empirical upper limit of ∼ 0.05 per channel in the transmission coefficient, below which the Landauer-Büttiker formula without the Sharvin resistance correction remains a good approximation. In the high transmission limit, the Landauer-Büttiker formula with Sharvin correction and the semi-classical Boltzmann method reach fair agreement.

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Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide

Cited by 300 publications

References 46 publications

Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode

Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode

Enhanced photoresponsivity of the MoS2-GaN heterojunction diode via the piezo-phototronic effect

Comparative investigation of electronic transport across three-dimensional nanojunctions

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