UHV REM study of the anti-band structure on the vicinal Si(111) surface under heating by a direct electric current

Латышев, А. В.; Krasilnikov, A.B.; Aseev, A. L.

doi:10.1016/0039-6028(94)91429-x

Cited by 50 publications

(28 citation statements)

References 14 publications

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“…As a consequence, the location of antibands under these conditions is no longer expected to change upon reversal of the electric current direction, which is in agreement with the experimental observations. 11,17 The expression for the gradient is later used to derive the condition for the onset of the antiband instability.…”

Section: Theory Of Step Shape Instability and Antiband Formationmentioning

confidence: 99%

“…1,2,10 Soon after the discovery of step bunching, it was found that prolonged dc annealing of Si(111) allows the surface morphology to further develop, giving rise to new morphologies such as antibands, which can be described as step bunches with slopes of the opposite sign as compared to the primary bunches. 11 Antibands are primarily formed via the shape evolution of atomic steps crossing the wide terraces between step bunches. At a certain stage of their development, these crossing steps acquire an S-shape, which does not manifest self-similarity when the terrace grows wider; i.e., beyond a certain terrace width, these S-shaped steps lose their stability and further develop towards a less symmetric shape.…”

Section: Introductionmentioning

confidence: 99%

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Antiband instability on vicinal Si(111) under the condition of diffusion-limited sublimation

et al. 2012

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In this paper, we investigate the antiband instability on vicinal Si(111) surfaces with different angles of misorientation. It is known that prolonged direct current-annealing of Si(111) results in the formation of antibands; i.e., the step bunches with the opposite slope to the primary bunches. We provide a theoretical description of antiband formation via the evolution of the atomic steps' shape. We also derive a criterion for the onset of the antiband instability under the conditions of sublimation controlled by slow adatom surface diffusion. We examine this criterion experimentally by studying the initial stage of the antiband formation at a constant temperature of 1270 • C while systematically varying the applied electromigration field. The experiment strongly supports the validity of the derived theoretical criterion and indicates the importance of accounting for the factor of critical field in the theoretical modeling of step bunching or antiband instabilities. Deduced from the comparison of theory and experiment, the Si surface atoms' effective charge cannot exceed double the elementary charge, set by the lower limit of kinetic characteristic length d s = 0.3 nm. Using d s = 1.7 − 4.5 nm draws values of the effective charge in line with the values reported in earlier studies.

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Section: Theory Of Step Shape Instability and Antiband Formationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Antiband instability on vicinal Si(111) under the condition of diffusion-limited sublimation

et al. 2012

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“…The gradual evolution of the atomic steps crossing the terraces and the creation of sublimation spirals were identified as being responsible for the formation of these antibands in previous experimental studies. 9 Figure 1(b) demonstrates neighboring terraces containing these features, with the former being the subject of investigation in this paper. In addition, there have been theoretical studies on the step-bending effects produced by electric currents driven parallel to the atomic steps.…”

Section: Introductionmentioning

confidence: 98%

“…9 Specifically, the electromigration of adatoms causes steps crossing the terraces to twist until they acquire a reversed alignment and form bands with opposite inclination, as compared to the primary step bunches, close to the terrace edges (antibands) [ Fig. 1(a)].…”

Section: Introductionmentioning

confidence: 99%

Critical field behavior and antiband instability under controlled surface electromigration on Si(111)

et al. 2011

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In this study we investigate step bunching and antiband surface instabilities on Si(111). We experimentally study the effects of a controlled electromigration field on the onset of antibands. We analyze the initial stage of antiband formation on step bunched surfaces under conditions of constant temperature of 1270 • C, while systematically varying the applied electromigration field. The relationship between the electromigration field and minimum terrace width required to initiate the antiband formation has been established. Also, we systematically measured values of the critical electromigration field, which is required to initiate the step-bunching process on Si(111) at 1130 • C (regime II) and 1270 • C (regime III). The dependence of the critical field on the mean atomic terrace width has been investigated and discussed.

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“…First, clean Si surfaces are usually obtained by resistive heating, which can modify the surface atomic structure because of electromigration phenomena. [10][11][12][13][14][15][16][17][18][19] Surface phase transitions and temperature dependence of the mass transport across the stepped surface determine rather complicated dependence of the step distribution on temperature and electric current direction ͓e.g., see a diagram for vicinal Si͑111͒ surfaces with small miscut angles in Ref. 31͔.…”

Section: Introductionmentioning

confidence: 99%

Regular stepped structures on clean Si(hhm)7×7 surfaces

Чайка

Fokin

Bozhko

et al. 2009

Journal of Applied Physics

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Regular single and triple step arrays with different periodicities have been fabricated in ultrahigh vacuum on clean Si͑557͒ surfaces at various thermal treatment procedures. The atomic structure of the triple step staircases has been studied with high resolution scanning tunneling microscopy ͑STM͒. The results of atomically resolved STM experiments demonstrate a number of possible triple step configurations on Si͑hhm͒ surfaces. The triple step models consistent with atomically resolved STM data obtained on regular Si͑223͒ and Si͑556͒ triple step staircases are presented. Possible driving forces for self-assembling regular step arrays on large scale areas are discussed.

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UHV REM study of the anti-band structure on the vicinal Si(111) surface under heating by a direct electric current

Cited by 50 publications

References 14 publications

Antiband instability on vicinal Si(111) under the condition of diffusion-limited sublimation

Antiband instability on vicinal Si(111) under the condition of diffusion-limited sublimation

Critical field behavior and antiband instability under controlled surface electromigration on Si(111)

Regular stepped structures on clean Si(hhm)7×7 surfaces

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