2005
DOI: 10.1007/s10470-005-4953-z
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UHF RF Front-End Circuits in 0.35-μm Silicon on Insulator (SOI) CMOS

Abstract: In this work, design and measurement results of UHF RF frontend circuits to be used in low-IF and subsampling receiver architectures are presented. We report on three low noise amplifiers (LNA) (i) single-ended (ii) differential (iii) high-gain differential and a double-balanced mixer all implemented in 0.35-µm SOI (Silicon on Insulator) CMOS technology of Honeywell. These circuits are considered as candidate low-power building blocks to be used in the two fully-integrated receiver chips targeted for deep spac… Show more

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Cited by 2 publications
(1 citation statement)
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“…Low power consumption and full integration are the most critical targets for implantable transceivers. Recently, some low-power CMOS transceivers, working at 433 MHz and 435 MHz bands, have been reported [6][7][8]. These designs achieve low-power operation, leaving the matching networks or voltage-controlled oscillator (VCO) tank inductor offchip.…”
Section: Introductionmentioning
confidence: 99%
“…Low power consumption and full integration are the most critical targets for implantable transceivers. Recently, some low-power CMOS transceivers, working at 433 MHz and 435 MHz bands, have been reported [6][7][8]. These designs achieve low-power operation, leaving the matching networks or voltage-controlled oscillator (VCO) tank inductor offchip.…”
Section: Introductionmentioning
confidence: 99%