UHF avalanche diode oscillator providing 400 watts peak power and 75 percent efficiency

2014

, and Schottky TRAPATT (TRApped Plasma Avalanche Triggered Transit) diodes were simulated. The drift-diffusion model was chosen for the simulation of the processes. We show that the minority carrier storage depends on the TRAPATT diode structure. The most intensive minority carrier storage takes place in the n + np + diode, where holes accumulate in the n + region and electrons in the p + region. The extraction of electrons from the p + region is more rapid due to higher electron mobility compared to holes. Thus, the initial current for the next oscillation period is the hole current. In the p + pn + diode the accumulation of holes in the n + region is inferior to that in the n + np + diode due to a higher electric field in the pn + interface. The initial current in p + pn + diodes is lower and the voltage oscillation is almost periodic. The most efficient structure in respect to low minority carrier storage is a pm-type Schottky diode. In this structure the initial conditions in all voltage oscillation periods are the same and there is a quite periodic oscillation in a very wide region of the diode total current density. We show that periodic oscillation can be achieved even in the n + np + diode with optical generation of the carriers during the plasma formation and extraction period.

“…11). The voltage oscillation on the pm Schottky TRAPATT diode is periodic at J = 6 kA/cm 2 and quite periodic even at the extremely high total current density J = 12 kA/cm 2 (Fig. 12).…”

Section: Computer Simulation Resultsmentioning

confidence: 97%

“…The best achieved result on efficiency (75 percent) was reported in [2]. The peak power output of 1.2 kW at 1.9 GHz with 24% efficiency from five series-connected diodes was obtained in [3].…”

Section: Introductionmentioning

confidence: 99%

Simulation of silicon n+np+, p+pn+ and Schottky TRAPATT diodes

2014

“…TRAPATT diodes were invented in [1] as high-power microwave devices working with high efficiency. The best achieved result on efficiency (75 percent) was reported in [2]. The peak power output of 1.2 kW at 1.9 GHz with 24% efficiency from five series-connected diodes was obtained in [3].…”

Section: Introductionmentioning

confidence: 99%

Simulation of silicon n+np+, p+pn+ and Schottky TRAPATT diodes

2014

The plasma formation and extraction processes in silicon n + np + , p + pn + , and Schottky TRAPATT (TRApped Plasma Avalanche Triggered Transit) diodes were simulated. The drift-diffusion model was chosen for the simulation of the processes. We show that the minority carrier storage depends on the TRAPATT diode structure. The most intensive minority carrier storage takes place in the n + np + diode, where holes accumulate in the n + region and electrons in the p + region. The extraction of electrons from the p + region is more rapid due to higher electron mobility compared to holes. Thus, the initial current for the next oscillation period is the hole current. In the p + pn + diode the accumulation of holes in the n + region is inferior to that in the n + np + diode due to a higher electric field in the pn + interface. The initial current in p + pn + diodes is lower and the voltage oscillation is almost periodic. The most efficient structure in respect to low minority carrier storage is a pm-type Schottky diode. In this structure the initial conditions in all voltage oscillation periods are the same and there is a quite periodic oscillation in a very wide region of the diode total current density. We show that periodic oscillation can be achieved even in the n + np + diode with optical generation of the carriers during the plasma formation and extraction period.

“…TRAPATT diodes were invented in [1] as high-power microwave devices working with high efficiency. The best achieved result on efficiency (75 percent) was reported in [2]. Peak power output of 1.2 kW at 1.9 GHz with 24% efficiency from five series-connected diodes has been obtained in [3].…”

Section: Introductionmentioning

confidence: 99%

Simulation of Si and GaAs submicron TRAPATT diodes

2014

Plasma formation and extraction processes in submicron silicon N + NP + , GaAs N + NP + , and GaAs NM Schottky TRAPATT (TRApped Plasma Avalanche Triggered Transit) diodes were simulated. The simulation of GaAs TRAPATT diodes was done for the first time. The quasi-hydrodynamic model was chosen for the simulation of the processes. The Synopsys TCAD Sentaurus Software Package was used. The carrier mobility dependence on phonon scattering, impurity scattering, carrier-carrier scattering, intervalley scattering (for GaAs), and mobility saturation in a high electric field was taken into account. Several generation-recombination mechanisms were included: impact ionization, Shockley-Read-Hall recombination (SRH) with doping-dependent lifetimes, trap-assisted tunnelling, band-to-band tunnelling, Auger recombination, and radiative recombination (for GaAs). We show that the so-called critical current density for plasma formation in the submicron diodes increases with the active layer thickness decrease and almost does not depend on the doping density in the active layer. The critical current density for silicon diodes is about two times lower than for the GaAs diodes. The intensive minority carrier storage in the N + and P + regions has a high influence on the voltage oscillation amplitude and frequency after the first plasma formation and extraction period. Oscillation damping takes place in the N + NP + GaAs diode with the active layer thickness of less than 0.3 µm.