Über Einige Elektrische Eigenschaften Der Halbleitenden Tellurverbindungen In2Te3, CdTe Und Ag2Te

Some Properties of In[sub 2]Te[sub 3] and Ga[sub 2]Te[sub 3]

“…Indium sesquitelluride In~Te3 is a semiconductor (1) with either a defect zinc blende or a defect antifluorite structure in which one-third or two-thirds, respectively, of the sites of the indium sublattice are vacant (2). When In~Te, is prepared normally from a stoichiometric melt of indium and tellurium, the lattice vacancies are arranged at random on the indium sublattice.…”

“…However in disordered material there should be a considerable alloy scattering effect due to the randomness of the vacancies in the lattice. It has been shown that the electrical conductivities of these compounds are very low (1). The spacing of these centers is only of the order of the lattice spacing, and hence it is not clear that the conventional plane wave development of band theory to electrical conductivity is applicable in this case, or whether perhaps a hopping process would describe the effect better.…”

“…The electrical conductivity of In2Te~ as a function of temperature has been investigated previously by Appel (1,8,9). The results fit a standard exponential variation of the form o-= A exp --2-~-, where E~ takes a different value over different ranges of temperature, and E~, an activation energy, has been interpreted as the energy gap No for the material.…”