Über die Halbleitereigenschaften des Kupferoxyduls. VII Der Halleffekt unterhalb der Zimmertemperatur

Abstract

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Point defects diagrams for pure and doped copper oxide Cu2±δO in the temperature range of 873–1473K

“…The decrease of the slope at lower oxygen pressures indicates a significant contribution of electron conductivity. The obtained value of the parameter b¼ 86 indicates that the mobility of electrons is greater than that of electron holes, which is consistent with the studies of other authors [44,[53][54][55][56][57]. As can be observed, the oxide should have a minimum of the electrical conductivity near the decomposition pressure.…”

“…The values of bo1 indicate that the mobility of electron holes is greater than the mobility of electrons, which is inconsistent with the results in the studies by other authors [44,[53][54][55][56][57]. Similar deflections were obtained for other temperatures.…”

“…The possibility of the existence of oxygen vacancies was previously postulated by Bloom [32] whilst analyzing the optical and electrical properties of Cu 2 À d O. Parallel to the studies of the deviation from the stoichiometry, other studies were performed that concerned the electrical conductivity [32][33][34][35][36][37][38][39][40][41][42][43][44][45], Seebeck effect [34,44,[46][47][48][49][50] and Hall effect [51][52][53][54][55][56][57]. The above studies show that the copper oxide is a p-type semiconductor and that the dominant defects are electron holes.…”

“…The change of the slope of the dependence of s on p O 2 could also be due to the presence of interstitial oxygen ions [44,45,62]. A change in the nature of the electrical conductivity at low oxygen pressures could be related to a significant contribution of electronic conductivity, due to the mobility of electrons higher than the mobility of electron holes [44,[53][54][55][56]. From the calculations performed by Porat and Riess it transpires that the ratio of mobilities of electrons vs. electron holes is about m e /m h ¼50 [44].…”