Type-II GaAsSb/InP DHBTs with Record f&lt;inf&gt;T&lt;/inf&gt; = 670 GHz and Simultaneous f&lt;inf&gt;T&lt;/inf&gt;, f&lt;inf&gt;MAX&lt;/inf&gt; &amp;#x226B; 400 GHz

Snodgrass, William; Wu, Bing-Ruey; Cheng, K. Y.; Feng, Milton

doi:10.1109/iedm.2007.4419031

Cited by 19 publications

(11 citation statements)

References 5 publications

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“…However, the electron mobility for the GaAsSb base is lower than that for the InGaAs base, which limits the high-frequency characteristics of InP/GaAsSb DHBTs [1]. In order to improve the high-frequency performance, DHBTs with a compositionor doping-graded base, such as GaAsSb [3], AlGaAsSb [4] or InGaAsSb [5]- [8], have been investigated. Particularly, DHBTs with a composition-and doping-graded InGaAsSb base provide an average electron velocity through the base and collector layers of 4 × 10 7 cm/s and a peak f T of more than 500 GHz [5].…”

Section: Introductionmentioning

confidence: 99%

Improvement of High-Frequency Characteristics of InGaAsSb-Base Double Heterojunction Bipolar Transistors by Inserting a Highly Doped GaAsSb Base Contact Layer

Kashio

Hoshi

Kurishima

et al. 2015

IEEE Electron Device Lett.

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This letter presents InP/GaAsSb/InGaAsSb/InP double heterojunction bipolar transistors (DHBTs) with a highly doped base contact layer. In order to reduce the base contact resistivity, a 3-nm-thick highly doped GaAsSb contact layer is inserted between the InP emitter and 17-nm-thick composition-and doping-graded InGaAsSb base. Fabricated DHBTs with a 0.25-µm emitter show a current gain of 32 and a high open-base breakdown voltage BV CEO of 5.2 V. The DHBTs also exhibit f T / f max = 513/637 GHz at a collector current density of 9.5 mA/µm 2 and V CE = 1 V. The f max is higher by 124 GHz than that for InP/InGaAsSb DHBTs without the GaAsSb contact layer. These results indicate that the use of the GaAsSb/InGaAsSb base structure is very effective in improving f max . Index Terms-GaAsSb, double heterojunction bipolar transistors (DHBTs), InP/InGaAsSb, highly doped base contact.

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Section: Introductionmentioning

confidence: 99%

Improvement of High-Frequency Characteristics of InGaAsSb-Base Double Heterojunction Bipolar Transistors by Inserting a Highly Doped GaAsSb Base Contact Layer

Kashio

Hoshi

Kurishima

et al. 2015

IEEE Electron Device Lett.

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“…Workers at the University of Illinois [24] in the USA have designed, fabricated and tested double heterojunction bipolar transistors (DHBT) with a cut-off frequency (i.e. unity current S GATE L D Figure 5.12 Basic structure of a field effect transistor gain) f T of 765 GHz at room temperature (855 GHz at 218 K).…”

Section: The Heterojunction Bipolar Transistor (Hbt)mentioning

confidence: 99%

Terahertz Sources

Miles¹,

Naftaly²

2009

Microwave Photonics

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The terahertz (THz) region of the electromagnetic spectrum is commonly defined as that lying at frequencies between 0.1 and10 THz. The frequently-heard expression 'the THz gap' refers to the fact that at these frequencies generation and detection of radiation becomes very difficult using either electronic or optical means. Nevertheless, with the growth of interest in THz research and applications and a great expansion of activities in this area, a large number and variety of sources have been developed and have become widely available. These include THz lasers, laser-activated emitters and electronic devices. Broadly speaking, in applications requiring a continuous-wave narrow-line signal at frequencies below 1 THz, electronic sources predominate. Examples include local oscillators for astronomical instruments and security scanners. On the other hand, lasers and laser-activated emitters are mainly used for broadband THz spectroscopy covering a bandwidth of several THz. This division of functions is likely to persist since electronic THz sources are, by their nature, singlefrequency devices, whereas laser-based sources are either inherently broadband or widely tuneable. Nevertheless, both types of THz emitting devices have found numerous applications, and will be described here. Terahertz Generation from Laser SourcesThe recent rapid expansion of the field of terahertz research and applications owes much of its existence to the development of suitable laser sources and methods of THz generation. These developments fall into two categories: direct emission from far-infrared lasers and optical down-conversion of near-infrared lasers. Owing to the flexibility of the systems and the broad tuning range, down-conversion greatly predominates as the technique of choice, and accounts for the vast majority of work in the THz field.

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“…The highfrequency performance of uniform-base InP/InGaAsSb DHBTs is comparable to that of composition-graded-base InP/GaAsSb DHBTs [8]. In addition, the remarkable highfrequency characteristics of DHBTs featuring a compositiongraded base with GaAsSb on the emitter side and InGaAsSb on the collector have also been demonstrated [9]. However, there is no report on DHBTs with a composition-graded base consisting only of InGaAsSb.…”

Section: Introductionmentioning

confidence: 97%

“…One problem with them is the relatively low electron mobility for GaAsSb compared with that for InGaAs, which limits the peak f t [3]. To overcome the problem, several groups have demonstrated composition-or doping-graded GaAsSb-, AlGaAsSb-, and InGaAsSb-base DHBTs [4]- [9]. Among them, the use of the InGaAsSb base is very effective for improving the electron transport properties.…”

Section: Introductionmentioning

confidence: 99%

Composition- and Doping-Graded-Base InP/InGaAsSb Double Heterojunction Bipolar Transistors Exhibiting Simultaneous <inline-formula> <tex-math notation="TeX">\(f_{t}\) </tex-math></inline-formula> and <inline-formula> <tex-math notation="TeX">\(f_{\textrm {max}}\) </tex-math></inline-formula> of Over 500 GHz

Kashio

Hoshi

Kurishima

et al. 2014

IEEE Electron Device Lett.

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We demonstrate composition-and doping-gradedbase InP/InGaAsSb double heterojunction bipolar transistors (DHBTs) with a passivation ledge fabricated in a self-aligned process with i-line lithography. We obtained a high current gain of 52 and high breakdown voltage of 5 V for 0.2-µm-emitter DHBTs featuring 30-nm-thick composition-and doping-graded InGaAsSb base and 100-nm-thick InP collector. The HBTs exhibit an f t of 501 GHz and an f max of 503 GHz at a collector current density of 10.6 mA/µm 2 .

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Type-II GaAsSb/InP DHBTs with Record f<inf>T</inf> = 670 GHz and Simultaneous f<inf>T</inf>, f<inf>MAX</inf> ≫ 400 GHz

Cited by 19 publications

References 5 publications

Improvement of High-Frequency Characteristics of InGaAsSb-Base Double Heterojunction Bipolar Transistors by Inserting a Highly Doped GaAsSb Base Contact Layer

Improvement of High-Frequency Characteristics of InGaAsSb-Base Double Heterojunction Bipolar Transistors by Inserting a Highly Doped GaAsSb Base Contact Layer

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