2013
DOI: 10.1088/0022-3727/46/9/095103
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Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

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Cited by 27 publications
(16 citation statements)
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“…One of the most important and more influencing factors of wavelength prolongation is the introduction of GaAsSb SRL. As known from previous research [1][2][3], the high amount of antimony in GaAsSb SRL causes the PL wavelength redshift. There are two reasons for such behavior.…”
Section: Resultsmentioning
confidence: 62%
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“…One of the most important and more influencing factors of wavelength prolongation is the introduction of GaAsSb SRL. As known from previous research [1][2][3], the high amount of antimony in GaAsSb SRL causes the PL wavelength redshift. There are two reasons for such behavior.…”
Section: Resultsmentioning
confidence: 62%
“…HRTEM observations revealed the lensshaped morphology of the overgrown InAs QDs exhibiting a size of about 5 nm in height and 15 nm in width at the base. Their size does not significantly differ from the usual size of InAs QDs in samples prepared in our laboratory by MOVPE under similar growth conditions [3,5]. The cross-section HRTEM image of Fig.…”
Section: Resultsmentioning
confidence: 72%
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“…The graded concentration of Sb in the reactor and in the GaAsSb layer achieved by this method was confirmed by RAS during the growth and by the HRTEM measurement of prepared structures [8]. The average Sb concentration in SRLs of samples I is lower than in samples D, however, both types of samples have the type II band alignment between QDs and SRL, which was proved by the PL measurement [9]. During the 15 s growth interruption, in case of samples D1, D5 and I1, I5, the H 2 /tBAs flow was changed from 0.5 to 2.05 ml/min and from 5 to 2.72 respectively.…”
Section: Structure Growth Monitored By Rasmentioning
confidence: 52%