Type-I quantum well cascade diode lasers emitting near 3 <i>μ</i>m

Shterengas, L.; Liang, Rui; Kipshidze, G.; Hosoda, Takashi; Suchalkin, S.; Belenky, Gregory

doi:10.1063/1.4821992

Cited by 28 publications

(20 citation statements)

References 10 publications

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“…In conclusion, laser emission below 2.8 lm based on interband cascade lasers was demonstrated with a record value of the characteristic temperature T 0 of 67 K. Based on pulsed mode operation around room temperature in the wavelength range around 3 lm, the three earlier mentioned approaches can be compared in terms of threshold current densities: Cascaded type-I QW devices were published with around 100 A/cm 2 for quinary diode lasers 8,9 and with around 300 A/cm 2 for a superlattice design. 10 Based on QCL technology, threshold current densities of around 2.0 kA/cm 2 and 3.5 kA/cm 2 were achieved on the InP and InAs material system, respectively.…”

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Single-mode interband cascade lasers emitting below 2.8 μm

Scheuermann

Weih

Edlinger

et al. 2015

Applied Physics Letters

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In this work, single-mode distributed feedback (DFB) interband cascade laser (ICL) devices with record short wavelength emission below 2.8 μm are presented. Pulsed measurements based on broad area laser devices with a cavity of 2 mm length and 150 μm width showed threshold current densities of 383 A/cm2 at T = 20 °C and a characteristic temperature T0 of 67 K. Fabricated DFB devices were operated in continuous wave mode at room temperature, with threshold currents of 57 mA and demonstrated side mode suppression ratios of larger than 25 dB. The devices showed current tuning ranges of 7 nm and total (including drive current and temperature) tuning ranges of 12 nm, with respective tuning rates of 21 nm/W, 0.13 nm/mA and 0.29 nm/K. Using the full spectral gain bandwidth of the underlying ICL material, single-mode DFB emission was observed within a wavelength range of 150 nm utilizing different DFB grating periods.

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confidence: 99%

Single-mode interband cascade lasers emitting below 2.8 μm

Scheuermann

Weih

Edlinger

et al. 2015

Applied Physics Letters

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“…We have shown [6] that, at least within antimonide material system, the cascade pumping scheme is compatible with type-I QW interband gain sections providing efficient carrier recycling between stages leading to internal efficiencies in excess of 100% . Corresponding high power room temperature operated 2.4 -3.3 µm two-stage cascade diode lasers were fabricated [7].…”

Section: Technology Transfermentioning

confidence: 97%

“…Experiment confirmed that interband tunnel junction followed by electron injector located near anti-node of the laser mode did not lead to excessive internal optical loss. In devices reported previously [6] the separation between active QW and electron injector was above 200 nm (see structure R in Figure 1). Large spacing eliminated any interaction between gain section and injector but led to reduced QW optical confinement factor.…”

Section: Technology Transfermentioning

confidence: 99%

“…The graded layer was followed by tunnel junction and electron injector comprised of nominally undoped 10-nm-thick GaSb, 2.5-nm-thick AlSb and Tedoped 6-period InAs/AlSb chirped superlattice (SL).The grown structures were processed into 100-µm-wide and ~6-µm-wide dielectric confined ridge lasers. Structure R (Figure 1) depicts the design of the first reported type-I QW GaSb-based diode laser [6], and used in this work as a baseline reference sample. It was designed so that the fundamental optical mode overlapped the two double-QW narrow waveguide laser active regions separated by a tunnel junction and electron injector with 1.2-nm-thick AlSb layers.…”

Section: Technology Transfermentioning

confidence: 99%

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Novel Design of Type I High Power Mid-IR Diode Lasers for Spectral Region 3 - 4.2 Microns

Shterengas¹,

Belenky²,

Westerfeld³

2014

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Novel designs of the mid-infrared GaSb-based diode lasers were studied including those based on triple layer quantum well active regions, metamorphic virtual substrate and cascade pumping scheme. Cascade pumping of type-I quantum well gain section opened the whole new avenue of the mid-infrared diode laser development with the prospect of multifold improvement of the device characteristics. Cascade pumping was achieved utilizing efficient interband tunneling through "leaky" window in band alignment at GaSb/InAs heterointerface. The 100% efficient carrier recycling between stages was confirmed by twofold increase light-current characteristics slope of The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Report TitleNovel designs of the mid-infrared GaSb-based diode lasers were studied including those based on triple layer quantum well active regions, metamorphic virtual substrate and cascade pumping scheme. Cascade pumping of type-I quantum well gain section opened the whole new avenue of the mid-infrared diode laser development with the prospect of multifold improvement of the device characteristics. Cascade pumping was achieved utilizing efficient interband tunneling through "leaky" window in band alignment at GaSb/InAs heterointerface. The 100% efficient carrier recycling between stages was confirmed by twofold increase light-current characteristics slope of two-stage 2.4 -3.3 µm cascade lasers as compared to reference single-stage devices. The cascade pumping scheme reduced threshold current density of high power type-I quantum well GaSb-based ? ~ 3 µm diode lasers down to ~100 A/cm2 at room temperature. Devices with densely stacked two and three gain stages and 100-µm-wide aperture demonstrated peak power conversion efficiency of 16% and continuous wave output power of 960 mW. Corresponding narrow ridge lasers demonstrated above 100 mW of output power. Devices TOTAL: 8Number of Papers published in peer-reviewed journals: Names of Post Doctorates Names of Faculty Supported Names of Under Graduate students supported Names of Personnel receiving masters degrees Names of personnel receiving PHDsNumber of graduating undergraduates who achieved a 3.5 GPA to 4.0 (4.0 max scale): Number of graduating undergraduates funded by a DoD funded Center of Excellence grant for Education, Research and Engineering:The number of undergraduates funded by your agreement who graduated during this period and intend to work for the Department of Defense The number of undergraduates funded by your agreement who graduated during this period and will receive scholarships or fellowships for further studies in science, mathematics, engineering or technology fields: Student Metrics This section only applies to graduating undergraduates supported by this agreement in this reporting periodThe number of...

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“…11,12 The gain properties of such structures are often characterized by stationary methods such as the Hakki-Paoli technique or the variable-stripe-length method. [13][14][15][16] Information on the gain dynamics associated with the carrier dynamics inside the laser medium can be obtained via ultrafast pump-probe experiments. [17][18][19] Here, we use optical pump-white light probe spectroscopy to study the gain dynamics of a type-II "W"-VECSEL chip containing 10 Â (GaIn)As/Ga(AsSb) "W"-multiple quantum wells.…”

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confidence: 99%

Gain spectroscopy of a type-II VECSEL chip

Lammers

Stein

Berger

et al. 2016

Applied Physics Letters

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Using optical pump-white light probe spectroscopy the gain dynamics is investigated for a VECSEL chip which is based on a type-II heterostructure. The active region the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by experimental spectra. The results show a gain buildup on the type-II chip which is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from reduced electron-hole scattering.Comment: 4 pages, 4 figure

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Type-I quantum well cascade diode lasers emitting near 3 μm

Cited by 28 publications

References 10 publications

Single-mode interband cascade lasers emitting below 2.8 μm

Single-mode interband cascade lasers emitting below 2.8 μm

Novel Design of Type I High Power Mid-IR Diode Lasers for Spectral Region 3 - 4.2 Microns

Gain spectroscopy of a type-II VECSEL chip

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