Type-I intermittency in semiconductor breakdown: An experimental confirmation

Abstract

Spontaneous oscillations developing during low-temperature impact ionization breakdown in extrinsic germanium are looked at with respect to characteristic features of the type-I intermittent route to chaos. We have examined the scaling behavior of the mean laminar phase length upon varying the transverse magnetic field applied. Taking into account the distribution of the phase lengths, the return map of the oscillation maxima, and the prevailing reinjection probability, we present experimental evidence that type-I intermittency takes place in a spatially extended macroscopic system with self-generated dynam-1cs.

On the form invariance of phase length distributions of type-I intermittency observed in a low-temperature semiconductor experiment

“…[4], that the scaling law (1) posscsses a universal character. The scaling lias been verified in a variety of different experimental systems [5], [6]. Recently, scientific interest was attracted again by type-1 intermittency when it was shown that in the case of the logistic map the scaling law (1) can be generalized to arbitrary higherorder moments n of the laminar phase length [7] In addition t o these moments, a scaliiig law for the second central moment, the mean variance, was obtained.…”

“…Beyond the first bisectrix, the laminar Channel with the "bottleneck" (indicated by the arrow) peculiar for type-1 intermittency can clearly be detected. For a comprehensive discussion of the features of type-1 intermittency in Our experimental system, we refer to [6]. In the following, we focus on the statistical description of the transition.…”

“…We (') It originates from a minimum Channel width being larger than zero, for positive values of the bifurcation parameter. For further discussion see [il] and [6].…”

Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown

“…Numerous investigations of magnetic field influence on low-temperature impurity breakdown in pGe and n-GaAs (see, for example, papers [4][5][6]) were concentrated on problems of beginning spontaneous current oscillations under these conditions and their transition to chaos. It is talked, as a rule, about low magnetic fields and slightly doped materials in the form of resistors.…”