TXRF Analysis of Low Z Elements and TXRF-NEXAFS Speciation of Organic Contaminants on Silicon Wafer Surfaces Excited by Monochromatized Undulator Radiation

Beckhoff, Burkhard; Fliegauf, R.; Ulm, G.; Weser, J.; Pepponi, G.; Streli, C.; Wobrauschek, P.; Ehmann, T.; Fabry, L.; Pahlke, S.; Kanngießer, Birgit; Malzer, Wolfgang

doi:10.4028/www.scientific.net/ssp.92.165

Cited by 9 publications

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“…Furthermore, calibrated detectors have been used, enabling reference-free quantitation of contamination. The present paper addresses the following topics: a detailed description of the dedicated TXRF instrumentation built by PTB, detection sensitivities − achieved so far by PTB and various cooperation partners at the electron storage ring BESSY II, the systematic optimization of detection limits of selected elements such as Al, the speciation of contamination, and recent developments in reference-free quantitation in TXRF analysis including its error budget as well as perspectives of this quantitation mode in table-top instruments.…”

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“…Reference-free quantitation in TXRF analysis requires specially designed instrumentation involving high standards in wafer positioning as well as very well-known X-ray excitation and detection characteristics. For the purpose of semiconductor surface analysis, PTB built XRF and TXRF instrumentation − that can handle 15−75 mm as well as 200- and 300-mm silicon wafers. The TXRF and XRF instrumentation, which is suitable for handling 15−75-mm Si or SiC wafers, is described elsewhere. ,− This instrumentation is located in the focal plane of the PTB's plane grating monochromator (PGM) beamline , for undulator radiation within the PTB laboratory at BESSY II and, additionally, can be positioned below a local minienvironment to avoid unintentional cross-contamination of the wafer samples.…”

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“…The commissioning of PTB's industrial purpose TXRF arrangement involved 200-mm silicon wafers that were intentionally contaminated with 100-μL droplets containing metal and light element contamination in the picogram range, which were prepared by the Central Analytical Laboratories of Wacker Siltronic. In a study, the element Na was excited with monochromatic radiation of 1206-eV photon energy at an incident angle of 1° to optimize its detection limit. Part a of Figure shows a rapid lateral scan across a droplet containing 500 pg of Na.…”

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Reference-Free Total Reflection X-ray Fluorescence Analysis of Semiconductor Surfaces with Synchrotron Radiation

et al. 2007

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Total reflection X-ray fluorescence (TXRF) analysis is a well-established method to monitor lowest level contamination on semiconductor surfaces. Even light elements on a wafer surface can be excited effectively when using high-flux synchrotron radiation in the soft X-ray range. To meet current industrial requirements in nondestructive semiconductor analysis, the Physikalisch-Technische Bundesanstalt (PTB) operates dedicated instrumentation for analyzing light element contamination on wafer pieces as well as on 200- and 300-mm silicon wafer surfaces. This instrumentation is also suited for grazing incidence X-ray fluorescence analysis and conventional energy-dispersive X-ray fluorescence analysis of buried and surface nanolayered structures, respectively. The most prominent features are a high-vacuum load-lock combined with an equipment front end module and a UHV irradiation chamber with an electrostatic chuck mounted on an eight-axis manipulator. Here, the entire surface of a 200- or a 300-mm wafer can be scanned by monochromatized radiation provided by the plane grating monochromator beamline for undulator radiation in the PTB laboratory at the electron storage ring BESSY II. This beamline provides high spectral purity and high photon flux in the range of 0.078-1.86 keV. In addition, absolutely calibrated photodiodes and Si(Li) detectors are used to monitor the exciting radiant power respectively the fluorescence radiation. Furthermore, the footprint of the excitation radiation at the wafer surface is well-known due to beam profile recordings by a CCD during special operation conditions at BESSY II that allow for drastically reduced electron beam currents. Thus, all the requirements of completely reference-free quantitation of TXRF analysis are fulfilled and are to be presented in the present work. The perspectives to arrange for reference-free quantitation using X-ray tube-based, table-top TXRF analysis are also addressed.

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Reference-Free Total Reflection X-ray Fluorescence Analysis of Semiconductor Surfaces with Synchrotron Radiation

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“…The whole wafer surface of a 200 and a 300 mm wafer can be scanned. 40 Recent activites report on detection limits below 100 fg for Al and below 40 fg for Na. Also reference free quantification was performed successfully.…”

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Synchrotron radiation induced TXRF

Streli

Wobrauschek

Meirer

et al. 2008

J. Anal. At. Spectrom.

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The use of synchrotron radiation (SR) as an excitation source for total reflection X-ray fluorescence analysis (TXRF) offers several advantages over X-ray tube excitation. Detection limits in the fg range can be achieved with efficient excitation for low Z as well as high Z elements due to the features of synchrotron radiation and in particular the high brilliance in a wide spectral range and the linear polarization in the orbital plane. SR-TXRF is especially interesting for samples where only small sample masses are available. Lowest detection limits are typically achieved using multilayer monochromators since they exhibit a bandwidth of about 0.01 DE/E. Monochromators with smaller bandwidth like perfect crystals, reduce the intensity, but allow X-ray absorption spectroscopy (XAS) measurements in fluorescence mode for speciation and chemical characterisation at trace levels. SR-TXRF is performed at various synchrotron radiation facilities. An historical overview is presented and recent setups and applications as well as some critical aspects are reviewed.

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“…For analytical investigations relevant for the semiconductor industry, the PTB can handle 200 mm and 300 mm silicon wafers as well as smaller semiconductor wafers in its TXRF, GIXRF and XRF instrumentation (1,2). To prevent undesired cross-contamination of the wafers, the instrumentations are protected by mobile cleanrooms (cfr.…”

Section: Semiconductor Characterization By Reference-free X-ray Spect...mentioning

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Wafer Contamination Analysis, Speciation and Reference-free Nanolayer Characterization using Synchrotron Radiation based X-ray Spectrometry

et al. 2007

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TXRF Analysis of Low Z Elements and TXRF-NEXAFS Speciation of Organic Contaminants on Silicon Wafer Surfaces Excited by Monochromatized Undulator Radiation

Cited by 9 publications

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Reference-Free Total Reflection X-ray Fluorescence Analysis of Semiconductor Surfaces with Synchrotron Radiation

Reference-Free Total Reflection X-ray Fluorescence Analysis of Semiconductor Surfaces with Synchrotron Radiation

Synchrotron radiation induced TXRF

Wafer Contamination Analysis, Speciation and Reference-free Nanolayer Characterization using Synchrotron Radiation based X-ray Spectrometry

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