Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1%

David, Laurent; Höhn, Oliver; Müller, Ralph; Beutel, Paul; Schygulla, Patrick; Hauser, Hubert; Predan, Felix; Siefer, Gerald; Schachtner, Michael; Schön, Jonas; Benick, Jan; Hermle, Martin; Dimroth, Frank

doi:10.1002/solr.202000210

Cited by 53 publications

(39 citation statements)

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“…The main challenge of the III–V/Si approach is the lattice constant mismatch of 4% between Si and III–V semiconductors with appropriate bandgaps such as GaAs and GaIn 0.5 P 0.5 . Direct wafer bonding of the Si bottom cell to the III–V tandem cell stack has been used successfully to overcome the mismatch and reach a conversion efficiency of 34.1% [ 4 ] for a GaInP/AlGaAs/Si design in a 2‐terminal configuration. With a 4‐terminal configuration, a value of 35.9% [ 5 ] was achieved via mechanical stacking of the individual subcells.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic Al_xGa_1−xAs_yP_1−y Step‐Graded Buffer Structures

et al. 2021

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III–V/Si multi‐junction solar cells are potential successors to the silicon single‐junction cell due to their efficiency potential of up to 40% in the radiative limit.[1] Herein, latest results of epitaxially integrated GaInP/GaAs/Si triple‐junction cells are presented. To reduce parasitic absorption losses, which have limited the current density in the Si bottom cell in the previous devices, transparent AlxGa1–xAsyP1–y step‐graded metamorphic buffers are investigated. Compared with previous GaAsyP1–y step‐graded buffers, the transmittance is enhanced significantly, while no significant impact on the threading dislocation density is observed. Implemented into a new triple‐junction solar cell, an increase in short‐circuit current density from 10.0 to 12.2 mA cm−2 is achieved, leading to a new record conversion efficiency of 25.9% under AM1.5g conditions.

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Section: Introductionmentioning

confidence: 99%

Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic Al_xGa_1−xAs_yP_1−y Step‐Graded Buffer Structures

et al. 2021

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“…The GaAs‐based cell enhances device efficiency, whereas the Si cell is a low‐cost bottom cell that is highly sensitive in the long‐wavelength region. Theoretically, the efficiency of GaAs//Si MJ solar cells can exceed 30%, leading to a considerable increase in research and development on GaAs//Si MJ solar cells 14–26 . Recently, an InGaP/GaAs//Si three‐junction device with a four‐terminal configuration and transparent insulating bonding layer achieved an efficiency of 35.9% 27 .…”

Section: Introductionmentioning

confidence: 99%

“…Theoretically, the efficiency of GaAs//Si MJ solar cells can exceed 30%, leading to a considerable increase in research and development on GaAs//Si MJ solar cells. [14][15][16][17][18][19][20][21][22][23][24][25][26] Recently, an InGaP/GaAs//Si three-junction device with a fourterminal configuration and transparent insulating bonding layer achieved an efficiency of 35.9%. 27 With a two-terminal configuration, a three-junction InGaP/InGaAsP//Si device achieved an efficiency of 34.5%, which was realized using surface activation for wafer bonding.…”

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confidence: 99%

III‐V//Cu_xIn_1−yGa_ySe₂ multijunction solar cells with 27.2% efficiency fabricated using modified smart stack technology with Pd nanoparticle array and adhesive material

Makita

Kamikawa

Mizuno

et al. 2021

Progress in Photovoltaics

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Multijunction (MJ) solar cells achieve high efficiencies by effectively utilizing the solar spectrum. Previously, we have developed III-V MJ solar cells using smart stack technology, a mechanical stacking technology that uses a Pd nanoparticle array. In this study, we fabricated an InGaP/AlGaAs//Cu x In 1Ày Ga y Se 2 three-junction solar cell by applying modified smart stack technology with a Pd nanoparticle array and adhesive material. Using adhesive material (silicone adhesive), the bonding stability was improved conspicuously. The total efficiency achieved was 27.2% under AM 1.5 G solar spectrum illumination, which is a better performance compared to our previous result (24.2%) for a two-terminal solar cell. The performance was achieved by optimizing the structure of the upper GaAs-based cell and by using a Cu x In 1Ày Ga y Se 2 solar cell with a specialized performance for an MJ configuration. In addition, we assessed the reliability of the InGaP/AlGaAs//Cu x In 1Ày Ga y Se 2 three-junction solar cell through a heat cycle test (from À40 C to +85 C; 50 cycles) and were able to confirm that our solar cells show high resistivity under severe conditions. The results demonstrate the potential of III-V//Cu x In 1Ày Ga y Se 2 MJ solar cells as next-generation photovoltaic cells for applications such as vehicle-integrated photovoltaics; they also demonstrate the effectiveness of modified smart stack technology in fabricating MJ cells. K E Y W O R D S bonding technology, Cu x In 1Ày Ga y Se 2 solar cells, III-V solar cells, mechanical stack, multijunction solar cells 1 | INTRODUCTION According to a reported scenario on the growth of the photovoltaics (PV) market, the world's cumulative PV-installed capacity will increase to 20 terawatts by 2040. 1 To realize this target, reducing the cost of PV power generation is an important goal of global energy policies. 2 In addition, applications to innovative markets, such as small mobilities (automobiles 3-5 and flight vehicles), need to be implemented. Against this background, the development of new, efficient, and low-cost solar cells has become an urgent priority. One promising solution is the multijunction (MJ) solar cell, which has already achieved high efficiencies (>30%) in combination with III-V solar cells. MJ photovoltaic cells based

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“…The multijunction solar cells have the highest photoelectric conversion efficiency [ 1,2 ] through the optimal utilization of the broad solar spectrum with vertically stacked tandem subcells. [ 3,4 ] Inverted metamorphic multijunction (IMM) technology [ 5–8 ] prevents the degradation of the top cell by finally growing lattice mismatches to obtain three‐junction or even more junction solar cells. According to the detailed balance limit, [ 9 ] the practical efficiencies of multijunction solar cells are expected to be close to the theoretical maxima, [ 10,11 ] but the development of more than three subcells is difficult due to the larger lattice mismatch.…”

Section: Introductionmentioning

confidence: 99%

Subcells Analysis of Thin‐Film Four‐Junction Solar Cells Using Optoelectronic Reciprocity Relation

Long

Sun

et al. 2021

Solar RRL

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A thin‐film AlGaInP/AlGaAs/InGaAs/InGaAs inverted metamorphic multijunction solar cell with a bandgap of 1.96/1.53/1.16/0.83 eV is fabricated. The photoelectric conversion efficiency reaches 34.89% with an open‐circuit voltage of 3.54 V under AM1.5 G spectrum. The analysis of individual subcells is the key to evaluating the performance of multijunction solar cells. The current density versus voltage characteristics of four subcells are calculated using optoelectronic reciprocity relation between the external quantum efficiency and the different injection current densities electroluminescence. The analysis of the performance characteristics of four subcells concludes that the key to limiting the overall efficiency improvement is the deep‐level recombination of the AlGaInP top subcell and the bulk recombination of 0.83 eV InGaAs bottom subcell. Targeted optimization of the top subcell and the bottom subcell is expected to significantly improve efficiency.

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Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1%

Cited by 53 publications

References 15 publications

Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic Al_xGa_1−xAs_yP_1−y Step‐Graded Buffer Structures

Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic Al_xGa_1−xAs_yP_1−y Step‐Graded Buffer Structures

III‐V//Cu_xIn_1−yGa_ySe₂ multijunction solar cells with 27.2% efficiency fabricated using modified smart stack technology with Pd nanoparticle array and adhesive material

Subcells Analysis of Thin‐Film Four‐Junction Solar Cells Using Optoelectronic Reciprocity Relation

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Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1%

Cited by 53 publications

References 15 publications

Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic AlxGa1−xAsyP1−y Step‐Graded Buffer Structures

Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic AlxGa1−xAsyP1−y Step‐Graded Buffer Structures

III‐V//CuxIn1−yGaySe2 multijunction solar cells with 27.2% efficiency fabricated using modified smart stack technology with Pd nanoparticle array and adhesive material

Subcells Analysis of Thin‐Film Four‐Junction Solar Cells Using Optoelectronic Reciprocity Relation

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Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic Al_xGa_1−xAs_yP_1−y Step‐Graded Buffer Structures

Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic Al_xGa_1−xAs_yP_1−y Step‐Graded Buffer Structures

III‐V//Cu_xIn_1−yGa_ySe₂ multijunction solar cells with 27.2% efficiency fabricated using modified smart stack technology with Pd nanoparticle array and adhesive material