Abstract:Abundant intrinsic defects and defect clusters in Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells lead to severe nonradiative recombination and limited photoelectric performance. Therefore, developing effective method to suppress the detrimental defects is the key to achieve high-efficiency solar cell. Herein, a convenient two-step cooling strategy in selenization process is reported to suppress the Cu Zn and Sn Zn defects and defect clusters synergistically. The results show that rapid cooling during section from sele… Show more
“…The photoluminescence (PL) spectrum measured at 137 K shows a main peak centered at 1.090 eV (black line in the inset of Figure b), which is only 5 meV lower than the band gap obtained from EQE. Wu et al reported a decrease of the difference between the PL emission and the optical band gap from 20 to 2 meV by developing a two-step cooling strategy during selenization to suppress the defect states . The energy difference between the PL emission and the optical band gap in our finding is quite small, suggesting that there is a low band tail state density in the inkjet-printed CZTSSe absorber.…”
mentioning
confidence: 41%
“…Wu et al reported a decrease of the difference between the PL emission and the optical band gap from 20 to 2 meV by developing a two-step cooling strategy during selenization to suppress the defect states. 30 The energy difference between the PL emission and the optical band gap in our finding is quite small, suggesting that there is a low band tail state density in the inkjet-printed CZTSSe absorber. In summary, we demonstrate that compact and crack-free CZTSSe thin films with high crystallinity and a low band tail state density can be achieved by inkjet printing of the preoptimized precursor ink under ambient condition.…”
Although
the efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) thin
film solar cell has exceeded 13%, the deposition
of
CZTSSe absorbers is based on spin coating in a glovebox, which is
uncompetitive for low-cost and high-throughput production. Hence,
we report a deposition of high-quality CZTSSe thin film absorber via
a scalable inkjet printing method in ambient air. The structure, morphology,
and electronic and photovoltaic properties of the printed CZTSSe absorber
were analyzed. CZTSSe devices with total area efficiency of 9.2% are
achieved, which ranks the highest efficiency of CZTSSe solar cells
prepared by inkjet printing method. This work demonstrated that inkjet
printing could be a promising way for the fabrication of cost-effective
CZTSSe solar cells.
“…The photoluminescence (PL) spectrum measured at 137 K shows a main peak centered at 1.090 eV (black line in the inset of Figure b), which is only 5 meV lower than the band gap obtained from EQE. Wu et al reported a decrease of the difference between the PL emission and the optical band gap from 20 to 2 meV by developing a two-step cooling strategy during selenization to suppress the defect states . The energy difference between the PL emission and the optical band gap in our finding is quite small, suggesting that there is a low band tail state density in the inkjet-printed CZTSSe absorber.…”
mentioning
confidence: 41%
“…Wu et al reported a decrease of the difference between the PL emission and the optical band gap from 20 to 2 meV by developing a two-step cooling strategy during selenization to suppress the defect states. 30 The energy difference between the PL emission and the optical band gap in our finding is quite small, suggesting that there is a low band tail state density in the inkjet-printed CZTSSe absorber. In summary, we demonstrate that compact and crack-free CZTSSe thin films with high crystallinity and a low band tail state density can be achieved by inkjet printing of the preoptimized precursor ink under ambient condition.…”
Although
the efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) thin
film solar cell has exceeded 13%, the deposition
of
CZTSSe absorbers is based on spin coating in a glovebox, which is
uncompetitive for low-cost and high-throughput production. Hence,
we report a deposition of high-quality CZTSSe thin film absorber via
a scalable inkjet printing method in ambient air. The structure, morphology,
and electronic and photovoltaic properties of the printed CZTSSe absorber
were analyzed. CZTSSe devices with total area efficiency of 9.2% are
achieved, which ranks the highest efficiency of CZTSSe solar cells
prepared by inkjet printing method. This work demonstrated that inkjet
printing could be a promising way for the fabrication of cost-effective
CZTSSe solar cells.
“…140 In 2022, an efficiency of 12.87% was achieved using a two-step cooling strategy, which can suppress the Cu Zn and Sn Zn defects and defect clusters synergistically. 141…”
“…140 In 2022, an efficiency of 12.87% was achieved using a two-step cooling strategy, which can suppress the Cu Zn and Sn Zn defects and defect clusters synergistically. 141 Unlike amine-thiol, DMSO and other solvents, the fabrication of CZTSSe solars by EGME solvent is not only insensitive to oxygen and water in the air but also does not show decomposition or uneven morphology. Moreover, the precursor solution configuration process, including the spin coating process and annealing process by this solvent system, can be operated in the air.…”
Section: Extrinsic Doping Of Egme-based Routesmentioning
Solar cells based on emerging kesterite Cu2ZnSn(S,Se)4 (CZTSSe) materials have reached certified power conversion efficiency (PCE) as high as 13.6%, showing great potential in the next generation of photovoltaic technologies...
“…In the current research stage, greater focus has been paid to the CZTSSe absorber layer itself. Researchers have continuously explored to improve the CZTSSe crystal quality through bulk phase regulation, , element doping, , selenization/sulfurization modification, , solvent engineering, , and so on. Over 14% efficiency has been achieved for kesterite solar cells by regulating the phase evolution kinetics of Ag-alloyed CZTSSe in a positive pressure .…”
The nature of interfaces between each functional layer
of Cu2ZnSnS
x
Se4–x
(CZTSSe) solar cells is the key issue impacting
cell performance, typically its influence on carrier recombination
and charge transportation. The routine magnetron sputtering method
for the ZnO/ITO layers can destroy ordered lattices due to the continuous
bombardment of the CZTSSe/CdS heterojunction region. In this work,
a sol–gel solution-processed ZnO layer (ZnO-SG) is incorporated
to construct a nondestructive heterojunction interface, and 18-crown-6-ether
(18C6) is used to further modify this ZnO-SG window layer for better
performance. Our investigation reveals that noncovalent interaction
between 18C6 and ethanolamine from the ZnO-SG not only reduces defects
from the ZnO layer itself but also modulates the energy band position
for better band alignment to facilitate carrier transportation. Finally,
based on our 18C6-modified ZnO-SG, a total-area 14.06% efficiency
and 13.77% certified efficiency have been achieved.
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