Two-stage co-evaporated CuSbS2 thin films for solar cells

Wan, Lei; Ma, Cheng; Hu, Ke; Zhou, Ru; Mao, Xinyu; Pan, Shuhao; Wong, Lydia Helena; Xu, Jinzhang

doi:10.1016/j.jallcom.2016.04.193

Cited by 88 publications

(47 citation statements)

References 26 publications

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“…The Raman spectrum from CuSbS 2 single crystal exhibited peaks at 141, 247, and 335 cm −1 corresponded to reported values as shown in Figure . The strongest peak that was observed at 335 cm −1 was attributed to A g symmetry, which is Raman active mode . No distinct peaks of Cu 12 Sb 4 S 13 (316 and 355 cm −1 ) and Sb 2 S 3 (270 and 305 cm −1 ) were observed.…”

Section: Resultssupporting

confidence: 60%

“…Therefore, a combination of XRD measurements and Raman spectroscopy is useful when investigating the structure and phase purity of quaternary compounds. The Raman spectrum from CuSbS 2 single crystal exhibited peaks at 141, 247, and 335 cm −1 corresponded to reported values as shown in Figure . The strongest peak that was observed at 335 cm −1 was attributed to A g symmetry, which is Raman active mode .…”

Section: Resultssupporting

confidence: 59%

“…The hole concentration p , conductivity σ , and mobility µ h from Hall effect measurement were estimated to be 8.08 × 10 16 cm −3 , 0.85 S cm −1 , and 65.7 cm 2 V −1 s −1 at room temperature, respectively. The hole mobility is larger than that of reported CuSbS 2 polycrystalline thin film sample …”

Section: Resultscontrasting

confidence: 59%

See 2 more Smart Citations

Growth of CuSbS₂ Single Crystal as an Environmentally Friendly Thermoelectric Material

Nagaoka

Takeuchi

Yoshino

et al. 2019

Physica Status Solidi (a)

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High‐quality p‐type chalcostibite CuSbS2 single crystal is successfully synthesized by zone melting method for investigating fundamental properties. The grown crystal is orthorhombic structure and nearly stoichiometric with slightly Cu‐rich composition. The electrical properties are the hole concentration of 8.0 × 1016 cm−3, conductivity of 0.8 S cm−1, and mobility of 65 cm2 V−1 s−1 by Hall effect measurement at room temperature. Intrinsic low thermal conductivity in CuSbS2 single crystal is 0.9 W mK−1 at room temperature, which is an advantage of thermoelectric material. These results indicate that CuSbS2 has potential as an environmentally friendly high performance thermoelectric material and provide references for the results of characterization on polycrystalline samples.

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Section: Resultssupporting

confidence: 60%

Section: Resultssupporting

confidence: 59%

See 1 more Smart Citation

Growth of CuSbS₂ Single Crystal as an Environmentally Friendly Thermoelectric Material

Nagaoka

Takeuchi

Yoshino

et al. 2019

Physica Status Solidi (a)

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“…Pure chalcostibite CuSbS 2 (PDF card: 44‐1417) without any secondary phase can be obtained based on our synthesis processes as is indicated by the X‐ray diffraction patterns (Figure S1). The pure chalcostibite phase is further supported by Raman spectroscopy where two peaks exactly belong to CuSbS 2 . Besides, no changes, such as a phase transition or secondary phase separation, have been observed after the post‐annealing treatment.…”

Section: Resultsmentioning

confidence: 70%

High open‐circuit voltage CuSbS₂ solar cells achieved through the formation of epitaxial growth of CdS/CuSbS₂ hetero‐interface by post‐annealing treatment

Zhang

Huang

Yan

et al. 2018

Progress in Photovoltaics

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The earth‐abundant and environmentally‐friendly CuSbS2 solar cells have been struggling with low device performance, especially poor open circuit voltage (Voc). In this work, post‐annealing treatment of the CuSbS2/CdS heterojunction performed on CuSbS2‐based solar cells was firstly reported. With this treatment, we demonstrated CuSbS2 solar cells with a record Voc of 622 mV. The improvement of device performance was found peaked at 250°C post‐annealing which mainly benefits from the significantly boosted open‐circuit voltage and short‐circuit current. The study of microstructure by high‐resolution transmission electron microscopy revealed that such improvement could be attributed to the formation of epitaxial CuSbS2/CdS hetero‐interface upon heat treatment, which reduces the interface defect density that may lead to reduced Voc deficit. Besides, results of photoluminescence and time‐resolved photoluminescence measurements also indicated improved electrical properties of completed devices with higher photoluminescence intensity and longer minority carrier lifetime.

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“…Several methods have been reported for the fabrication of CuSbS 2 thin films such as thermal co‐evaporation, RF magnetron co‐sputtering, electrochemical deposition, solution‐based approach, chemical bath deposition (CBD), thermal treatment of chemically deposited binary stack of Sb 2 S 3 ‐CuS, thermal diffusion of physically evaporated Cu into chemical bath deposited Sb 2 S 3 under high vacuum, etc. Recently, Banu et al deposited CAS films by spin coating a hybrid molecular ink followed by sulfurization and studied the effect of S‐flux on optoelectronic and defect properties of CAS films .…”

Section: Introductionmentioning

confidence: 99%

Structural evolution of chemically deposited binary stacks of Sb ₂ S ₃ ‐CuS to phase‐pure CuSbS ₂ thin films and evaluation of device parameters of CuSbS ₂ /CdS heterojunction

et al. 2020

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Copper-based chalcogenide ternary compounds are promising materials to be used as absorber layer in solar cells. In this work, we have reported the preparation of copper antimony sulfide (CAS) thin films by annealing chemically deposited multi-stack of Sb 2 S 3 -CuS and the effect of thickness ratio between two binary sulfides on the formation of different crystalline phases of Cu-Sb-S system. A series of multilayer structure was prepared with different thickness of CuS in order to study the effect of copper concentration on the structural, morphological, optical, and electrical properties of the resulting Cu x Sb 1-x S y films. The CAS films were characterized by several techniques such as X-ray diffraction, Raman scattering, UV-visible spectroscopy, atomic force microscopy, scanning electron microscopy, energy-dispersive X-ray spectroscopy, andHall effect measurements to evaluate their physical properties. The formation of either pure chalcostibite (CuSbS 2 ) or mixed ternary phases containing chalcostibite, famatinite (Cu 3 SbS 4 ), and tetrahedrite (Cu 12 Sb 4 S 13 ) were detected depending on the thickness ratio of Sb 2 S 3 and CuS. Chalcostibite films revealed desired optical and electrical values. Finally, solar cell was fabricated using the heterostructure FTO/CdS/CuSbS 2 /Ag and characterized by currentvoltage, capacitance-voltage, and impedance-spectroscopy measurements achieving a promising~0.8% efficiency with V OC = 0.484 V, J SC = 5.97 mA/cm 2 , and FF =27.34%. Impedance measurements revealed a low series resistance in the optimal solar cell, as a result, an increment in open circuit voltage. Novelty StatementThe novelty of this work is the fabrication of CuSbS 2 thin films by tuning the thickness ratio of binary sulfides in Sb 2 S 3 -CuS stack followed by proper thermal annealing. Furthermore, impedance spectroscopic studies of CuSbS 2 solar cell are still lacking; the present study may provide important physical insight to understand the device performance and possibilities toward any further improvement.

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Two-stage co-evaporated CuSbS2 thin films for solar cells

Cited by 88 publications

References 26 publications

Growth of CuSbS₂ Single Crystal as an Environmentally Friendly Thermoelectric Material

Growth of CuSbS₂ Single Crystal as an Environmentally Friendly Thermoelectric Material

High open‐circuit voltage CuSbS₂ solar cells achieved through the formation of epitaxial growth of CdS/CuSbS₂ hetero‐interface by post‐annealing treatment

Structural evolution of chemically deposited binary stacks of Sb ₂ S ₃ ‐CuS to phase‐pure CuSbS ₂ thin films and evaluation of device parameters of CuSbS ₂ /CdS heterojunction

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Two-stage co-evaporated CuSbS2 thin films for solar cells

Cited by 88 publications

References 26 publications

Growth of CuSbS2 Single Crystal as an Environmentally Friendly Thermoelectric Material

Growth of CuSbS2 Single Crystal as an Environmentally Friendly Thermoelectric Material

High open‐circuit voltage CuSbS2 solar cells achieved through the formation of epitaxial growth of CdS/CuSbS2 hetero‐interface by post‐annealing treatment

Structural evolution of chemically deposited binary stacks of Sb 2 S 3 ‐CuS to phase‐pure CuSbS 2 thin films and evaluation of device parameters of CuSbS 2 /CdS heterojunction

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Product

Resources

About

Growth of CuSbS₂ Single Crystal as an Environmentally Friendly Thermoelectric Material

Growth of CuSbS₂ Single Crystal as an Environmentally Friendly Thermoelectric Material

High open‐circuit voltage CuSbS₂ solar cells achieved through the formation of epitaxial growth of CdS/CuSbS₂ hetero‐interface by post‐annealing treatment

Structural evolution of chemically deposited binary stacks of Sb ₂ S ₃ ‐CuS to phase‐pure CuSbS ₂ thin films and evaluation of device parameters of CuSbS ₂ /CdS heterojunction