Two-port tunable interdigital capacitors fabricated on low-loss MBE-grown Ba0.29Sr0.71TiO3

Meyers, Cedric J. G.; Freeze, Chris; Stemmer, Susanne; Lan, Xiao; Chau, Loc; York, R.A.

doi:10.1109/mwsym.2016.7540112

Cited by 2 publications

(2 citation statements)

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“…The main drawback of this architecture is the use of overlapped layers, which makes the ferroelectric layer performances dependent on the lower electrode quality, and brings complexity to the fabrication process [20] and which are prone to resonant electrostrictive effects [21]. The second topology is planar, less complex, and consists of an inter-digitated capacitor (IDC) metallic structure [22][23][24] build directly on top of the ferroelectric layer. However, due to the limited resolution when using classical microfabrication technology based on optical photolithography, for a similar bias voltage the induced electric field in the BST layer in the case of the IDC device cannot be as high as for the MIM-based topology.…”

Section: Introductionmentioning

confidence: 99%

Characterization and Performance Analysis of BST-Based Ferroelectric Varactors in the Millimeter-Wave Domain

et al. 2021

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We present the realization and analysis of the microwave performances of interdigited varactors integrating thin ferroelectric layers of barium and strontium titanate (BaxSr1−xTiO3). Devices based on ferroelectric films of different compositions (x = 0.8 and x = 0.5) have been characterized in the millimeter-wave domain, from 200 MHz to 110 GHz. By applying different bias voltages, the tunability of the capacitance can reach up to 40% for the Ba0.8Sr0.2TiO3 composition, under relatively low applied electric fields of about 167 kV/cm. These promising characteristics allow the integration of the varactor devices in tunable antennas for a large frequency domain, from the microwaves to the millimeter waves range.

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Section: Introductionmentioning

confidence: 99%

Characterization and Performance Analysis of BST-Based Ferroelectric Varactors in the Millimeter-Wave Domain

et al. 2021

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“…capacitors [1][2][3] and chemical sensors [4][5][6][7][8][9] that rely on change in material properties due to external stimuli. For devices that utilize the piezoelectric effect, such as surface acoustic wave devices [10][11][12] and piezoelectric transducers [13,14], the dielectric properties must be understood in order to describe the electric field and coupling to the piezoelectric effect.…”

Section: Introductionmentioning

confidence: 99%

A unified approach for the calculation of in-plane dielectric constant of films with interdigitated electrodes

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Halvorsen

et al. 2020

Smart Mater. Struct.

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Interdigitated electrodes (IDEs) on dielectric films is an important electrode design in electrical components such as transducers and sensors. Further development and use of IDEs for characterization of the in-plane properties of dielectric films requires models for the capacitance, particularly when used in a multilayer stack. Previous models for the capacitance have permitted erroneous boundary conditions between layers with associated limitations to accuracy. In this work we present a new model based on fulfilling the boundary conditions between layers with different dielectric constant. We further demonstrate how the model can be used to calculate the in-plane dielectric constant and polarization of BaTiO3 films. The model is shown to outperform previous models using both the experimental data from BaTiO3 films on SrTiO3 substrates and finite element method simulations of the corresponding case. One important advantage compared to previous work is that the new model provides good results regardless of film thickness.

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Two-port tunable interdigital capacitors fabricated on low-loss MBE-grown Ba0.29Sr0.71TiO3

Cited by 2 publications

References 9 publications

Characterization and Performance Analysis of BST-Based Ferroelectric Varactors in the Millimeter-Wave Domain

Characterization and Performance Analysis of BST-Based Ferroelectric Varactors in the Millimeter-Wave Domain

A unified approach for the calculation of in-plane dielectric constant of films with interdigitated electrodes

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