Three-Dimensional Microfabrication Using Two-Photon Polymerization 2020
DOI: 10.1016/b978-0-12-817827-0.00059-x
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Two-photon polymerization as a component of Desktop-Integrated Manufacturing Platforms

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Cited by 3 publications
(5 citation statements)
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“…Electron beam lithography is a direct lithographic process that utilizes the power of focused beams of electrons to transfer an array of nano/micropatterns over the surface of substrate without the need of any mask. The process of electron beam lithography can either be additive (i.e., material depositing) or subtractive (i.e., removal of material) in nature [ 77 ]. This type of lithography process is also used for preparing stamps used in nanoimprint lithography.…”
Section: Fabrication Techniquesmentioning
confidence: 99%
“…Electron beam lithography is a direct lithographic process that utilizes the power of focused beams of electrons to transfer an array of nano/micropatterns over the surface of substrate without the need of any mask. The process of electron beam lithography can either be additive (i.e., material depositing) or subtractive (i.e., removal of material) in nature [ 77 ]. This type of lithography process is also used for preparing stamps used in nanoimprint lithography.…”
Section: Fabrication Techniquesmentioning
confidence: 99%
“…Also considered a "parallel" process, interference lithography represents a fast, straightforward and accurate approach for quasiperiodic structures with resolution below 10 nm, making it attractive for fabricating photonic crystals and metamaterials. 175 Another photon-based, maskless technique is stereolithography (SLA). In SLA, a computer-generated 3D design is "directly written" into a photoresist by focusing a laser beam of appropriate wavelength while following a sequence of stacked 2D layers which are thus photoprinted successively on top of each other by moving a "z" stage.…”
Section: Photostructuring Mipsmentioning
confidence: 99%
“…The resulting pattern may extend in 2D or 3D depending on the thickness of the reactive layer and it is generally further developed by thermal or chemical treatment in order to remove the unreacted photoresist. Also considered a “parallel” process, interference lithography represents a fast, straightforward and accurate approach for quasiperiodic structures with resolution below 10 nm, making it attractive for fabricating photonic crystals and metamaterials . Another photon-based, maskless technique is stereolithography (SLA).…”
Section: Photostructuring Mipsmentioning
confidence: 99%
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“…Wavelength reduced to 193 nm or 248 nm [ 32 ] 65–130 nm [ 32 ] Improved resolution in comparison to traditional UV lithography [ 32 ] Shorter wavelengths are more easily reflected [ 33 ] Interference effects [ 32 ] Maximum total thickness variation is 0.5 µm [ 34 ] Low depth of focus [ 34 ] Extreme UV lithography Use UV light and mask to pattern a photoresist. Wavelength reduced to 13.5 nm [ 35 ] < 10 nm [ 36 ] Improved resolution in comparison to traditional UV lithography [ 36 ] Shorter wavelengths are more easily reflected [ 33 ] Low photon transmission efficiency [ 37 ] Defects in the photomask warp pattern [ 38 ] Secondary electrons cause blur [ 39 ] Increased stochastic pattern variations [ 40 ] X-ray lithography Use x-rays and mask to pattern a photoresist [ 41 ] 15 nm [ 42 ] Improved resolution in comparison to traditional UV lithography [ 42 ] Large substrate-mask distances do not cause diffraction/proximity effects until the feature width approaches 100 nm [ 43 ] Shorter wavelengths are more easily reflected [ 33 ] Masks are thin, fragile, and expensive [ 44 ] Secondary electrons cause blur [ 45 ] Electron beam lithography Use electrons to pattern a resist [ 46 ] > 10 nm [ 47 ] Precise control [ 48 ] Can pattern complex geometries [ 48 ] Beam can damage the substrate [ …”
Section: Introductionmentioning
confidence: 99%