Two-photon absorption of Tl1−xIn1−xSnxSe2 (x=0, 0.1, 0.2, 0.25) single crystalline alloys and their nanocrystallites

Davydyuk, G. E.; Piasecki, M.; Parasyuk, O.V.; Myronchuk, G.L.; Fedorchuk, A.O.; Danylchuk, S.P.; Піскач, Л. В.; Mozolyuk, M.Yu.; Alzayed, Nasser S.; Kityk, I.V.

doi:10.1016/j.optmat.2013.07.012

Cited by 17 publications

(9 citation statements)

References 19 publications

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“…It is worth mentioning that the present data agree well with the precise XPS core-level measurements of binding energies of atoms constituting the Tl 1Àx In 1Àx Sn x Se 2 single crystal surfaces, both pristine and Ar + ion-bombarded. 9 As it has been established in ref. energies of the XPS Tl 4f core-level spectra, while binding energies of the XPS Sn 3d core-level spectra decrease somewhat as a result of such a treatment.…”

Section: Electronic Structurementioning

confidence: 83%

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Photoelectrical properties and the electronic structure of Tl1−xIn1−xSnxSe2 (x = 0, 0.1, 0.2, 0.25) single crystalline alloys

Davydyuk

Khyzhun

Reshak

et al. 2013

Phys. Chem. Chem. Phys.

166

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Photoelectrical properties of Tl1-xIn1-xSnxSe2 single crystalline alloys (x = 0, 0.1, 0.2, 0.25) grown using the Bridgman-Stockbarger method were studied. The temperature dependence of electrical and photoconductivity for the Tl1-xIn1-xSnxSe2 single crystals was explored. It has been established that photosensitivity of the Tl1-xIn1-xSnxSe2 single crystals increases with x. The spectral distribution of photocurrent in the wavelength spectral range 400-1000 nm has been investigated at various temperatures. Photoconductivity increases in all the studied crystals with temperature. Therefore, thermal activation of photoconductivity is caused by re-charging of the photoactive centers as the samples are heated. Based on our investigations, a model of center re-charging is proposed that explains the observed phenomena. X-ray photoelectron valence-band spectra for pristine and Ar(+)-ion irradiated surfaces of the Tl1-xIn1-xSnxSe2 single crystals have been measured. These results reveal that the Tl1-xIn1-xSnxSe2 single-crystal surface is sensitive to the Ar(+) ion irradiation that induced structural modification in the top surface layers. Comparison on a common energy scale of the X-ray emission Se Kβ2 bands representing energy distribution of the Se 4p-like states and the X-ray photoelectron valence-band spectra was done.

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Section: Electronic Structurementioning

confidence: 83%

“…8 We have studied in ref. 9 optical properties of samples in the entire concentration range of the Tl 1Àx In 1Àx Sn x Se 2 solid solutions (x = 0-0.25), including two-photon absorption at 9.4 mm wavelength and at various temperatures.…”

Section: Introductionmentioning

confidence: 99%

Photoelectrical properties and the electronic structure of Tl1−xIn1−xSnxSe2 (x = 0, 0.1, 0.2, 0.25) single crystalline alloys

Davydyuk

Khyzhun

Reshak

et al. 2013

Phys. Chem. Chem. Phys.

166

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“…These processes are dominant in changing the bandgap [15]. Due to the static substitution of indium atoms (In +3 ) by D IV atoms (D IV -Si +4 , Ge +4 , Sn +4 ) donor centers are formed.…”

Section: Experimental Results and Their Discussionmentioning

confidence: 99%

Photonic properties of devices based on multicomponent crystalline compounds with content (Si, Ge, Sn)

Danylchuk

Zamurueva

Sakhnyuk

et al. 2021

Phys. Chem. Solid St.

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The paper presents the results of optical and photoelectric measurements and their analysis for Tl1-xIn1-xDIVxSe2 (DIV – Si, Ge, Sn) crystalline compounds in the wavelength range 0.41.4 μm at a temperature T = 300 K. The work aims to investigate the influence of mole fraction DIVSe2 on the mechanisms of interband transitions and the basic photon parameters of crystals of ТlInSe2–DIVSe2 solid solutions. It was found that the change in the physical properties of the mole fraction of the components x associated with the rearrangement of the band structure significantly expands the functionality of the Tl1-xIn1-x(Si, Ge, Sn)xSe2 (x0.25) crystalline compounds as promising materials for optoelectronic devices.

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“…In particular, the crystals may be effectively used in the photonic gratings [12]. It is necessary to add that during multi-time IR induced treatment the observed photoinduced changes were completely reversible which confirm their high reproduction potential [13][14][15][16].…”

Section: Methodsmentioning

confidence: 99%

Two-photon absorption of Tl_1-xIn_1-xSn_xSe₂nanocrystallites

et al. 2016

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Abstract. Novel materials for the infrared two-photon absorption -Tl 1-x In 1-x Sn x Se 2 single crystals (x=0.1,0.2) were grown. Two-photon absorption (TPA) was studied at CO 2 laser wave-length 9.4μm with pulse duration 1μs. The studies were performed at different temperatures and for the nanocrystallite sizes varying within the 7-200 nm. The studies have shown that the TPA may be enhanced during the decrease of the nanocrystallite sizes below 50-60 nm. There exists also some critical x value at which the TPA value begin substantially to increase. The studied nanocrystallites are relatively stable to the infrared laser treatment and are not hygroscopic which allow to use them in different IR optoelectronic devices.

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Two-photon absorption of Tl1−xIn1−xSnxSe2 (x=0, 0.1, 0.2, 0.25) single crystalline alloys and their nanocrystallites

Cited by 17 publications

References 19 publications

Photoelectrical properties and the electronic structure of Tl1−xIn1−xSnxSe2 (x = 0, 0.1, 0.2, 0.25) single crystalline alloys

Photoelectrical properties and the electronic structure of Tl1−xIn1−xSnxSe2 (x = 0, 0.1, 0.2, 0.25) single crystalline alloys

Photonic properties of devices based on multicomponent crystalline compounds with content (Si, Ge, Sn)

Two-photon absorption of Tl_1-xIn_1-xSn_xSe₂nanocrystallites

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Two-photon absorption of Tl1−xIn1−xSnxSe2 (x=0, 0.1, 0.2, 0.25) single crystalline alloys and their nanocrystallites

Cited by 17 publications

References 19 publications

Photoelectrical properties and the electronic structure of Tl1−xIn1−xSnxSe2 (x = 0, 0.1, 0.2, 0.25) single crystalline alloys

Photoelectrical properties and the electronic structure of Tl1−xIn1−xSnxSe2 (x = 0, 0.1, 0.2, 0.25) single crystalline alloys

Photonic properties of devices based on multicomponent crystalline compounds with content (Si, Ge, Sn)

Two-photon absorption of Tl1-xIn1-xSnxSe2nanocrystallites

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Product

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Two-photon absorption of Tl_1-xIn_1-xSn_xSe₂nanocrystallites