The
ability to select and enrich semiconducting single-walled carbon nanotubes
(SWNT) with high purity has led to a fast rise of solution-processed
nanotube network field-effect transistors (FETs) with high carrier
mobilities and on/off current ratios. However, it remains an open
question whether it is best to use a network of only one nanotube
species (monochiral) or whether a mix of purely semiconducting nanotubes
but with different bandgaps is sufficient for high performance FETs.
For a range of different polymer-sorted semiconducting SWNT networks,
we demonstrate that a very small amount of narrow bandgap nanotubes
within a dense network of large bandgap nanotubes can dominate the
transport and thus severely limit on-currents and effective carrier
mobility. Using gate-voltage-dependent electroluminescence, we spatially
and spectrally reveal preferential charge transport that does not
depend on nominal network density but on the energy level distribution
within the network and carrier density. On the basis of these results,
we outline rational guidelines for the use of mixed SWNT networks
to obtain high performance FETs while reducing the cost for purification.