Two-million-pixel SOI diode uncooled IRFPA with 15&amp;amp;mu;m pixel pitch

Fujisawa, Daisuke; Maegawa, Tomohiro; Ohta, Yoshikuni; Kosasayama, Yasuhiro; Ohnakado, T.; Hata, Hiroyuki; Ueno, Masashi; Ohji, Hiroshi; Sato, Ryota; Katayama, Haruyoshi; Imai, Tadashi; Ueno, Munetaka

doi:10.1117/12.919520

Cited by 35 publications

(28 citation statements)

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“…Control of the detection wavelength according to the 2-D PLA can be applied to other types of thermal IR sensors, such as bolometers and silicon-on-insulator diodes. 25,26 The results presented here should be a significant contribution to the development of novel multicolor imaging for IR sensors. …”

Section: Discussionmentioning

confidence: 99%

Wavelength selective wideband uncooled infrared sensor using a two-dimensional plasmonic absorber

et al. 2013

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Abstract. A wavelength selective wideband uncooled infrared (IR) sensor that detects middle-wavelength and long-wavelength IR (MWIR and LWIR) regions has been developed using a two-dimensional plasmonic absorber (2-D PLA). The 2-D PLA has a Au-based 2-D periodic dimple-array structure, where photons can be manipulated using a spoof surface plasmon. Numerical investigations demonstrate that the absorption wavelength can be designed according to the surface period of dimples over a wide wavelength range (MWIR and LWIR regions). A microelectromechanical system-based uncooled IR sensor with a 2-D PLA was fabricated using complementary metal oxide semiconductor and micromachining techniques. Measurement of the spectral responsivity shows that the selective enhancement of responsivity is achieved over both MWIR and LWIR regions, where the wavelength of the responsivity peak coincides with the dimple period of the 2-D PLA. The results provide direct evidence that a wideband wavelength selective IR sensor can be realized simply by design of the 2-D PLA surface structure without the need for vertical control in terms of gap or thickness. A pixel array where each pixel has a different detection wavelength could be developed for multicolor IR imaging.

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Section: Discussionmentioning

confidence: 99%

Wavelength selective wideband uncooled infrared sensor using a two-dimensional plasmonic absorber

et al. 2013

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“…A SOI-diode VGA FPA with NETD of 21 mK (f/1, 30 Hz) and an uncooled infrared micro-camera with the same parameters have also been recently demonstrated. 4,5 These remarkable achievements have given a pulse to search for simple CMOS-compatible technological solutions based on diode bolometers which would be suited to mass production of low cost IR FPAs with NETD figures appropriate to various civil-medical and industrial-and tactical applications. [6][7][8] A possible attractive solution consists in utilization of metal/ poly-Si Schottky junctions for formation of sets of connected temperature sensors on bolometer membranes; 8 the Schottky-barrier bolometers were likely first proposed theoretically for high-sensitive cooled detectors in Ref.…”

Section: Introductionmentioning

confidence: 99%

Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

Yuryev

Чиж

Chapnin

et al. 2015

Journal of Applied Physics

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Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si 3 N 4 /SiO 2 /Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2 %/°C in the temperature interval from 25 to 50 °C.

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“…All-metal-based MPMAs can be applied for any type of uncooled IR sensors, such as thermopiles, bolometers, and silicon-on-insulator diodes. 31,32 The results obtained here will contribute to the development of high-performance single-mode wavelength-selective uncooled IR sensors for multicolor imaging in the wideband MWIR and LWIR regions.…”

Section: Discussionmentioning

confidence: 99%

Theoretical investigation of all-metal-based mushroom plasmonic metamaterial absorbers at infrared wavelengths

2015

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Abstract. High-performance wavelength-selective infrared (IR) sensors require small pixel structures, a lowthermal mass, and operation in the middle-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) regions for multicolor IR imaging. All-metal-based mushroom plasmonic metamaterial absorbers (MPMAs) were investigated theoretically and were designed to enhance the performance of wavelength-selective uncooled IR sensors. All components of the MPMAs are based on thin layers of metals such as Au without oxide insulators for increased absorption. The absorption properties of the MPMAs were investigated by rigorous coupled-wave analysis. Strong wavelength-selective absorption is realized over a wide range of MWIR and LWIR wavelengths by the plasmonic resonance of the micropatch and the narrow-gap resonance, without disturbance from the intrinsic absorption of oxide insulators. The absorption wavelength is defined mainly by the micropatch size and is longer than its period. The metal post width has less impact on the absorption properties and can maintain single-mode operation. Through-holes can be formed on the plate area to reduce the thermal mass. A small pixel size with reduced thermal mass and wideband single-mode operation can be realized using all-metal-based MPMAs.

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Two-million-pixel SOI diode uncooled IRFPA with 15&mu;m pixel pitch

Cited by 35 publications

References 0 publications

Wavelength selective wideband uncooled infrared sensor using a two-dimensional plasmonic absorber

Wavelength selective wideband uncooled infrared sensor using a two-dimensional plasmonic absorber

Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

Theoretical investigation of all-metal-based mushroom plasmonic metamaterial absorbers at infrared wavelengths

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