Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth

Dong, Yuan; Wang, Wei; Xu, Shengqiang; Lei, Dian; Gong, Xiao; Guo, Xin; Wang, Hong; Lee, Shuh-Ying; Loke, Wan-Khai; Yoon, S. F.; Yeo, Yee-Chia

doi:10.1364/oe.25.015818

Cited by 84 publications

(46 citation statements)

References 43 publications

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“…Assisted by a whispering-gallery cavity, a Geon-Si photodetector has achieved a responsivity of up to 0.45 A/W at 1630 nm [148]. Toward even longer wavelengths, GeSn alloys grown on silicon have attracted a lot of attention [149,150]. Recent works toward mid-IR imaging have extended the cut-off wavelength to 3.65 μm [149].…”

Section: Compatibility With Ultrawide-band Systemsmentioning

confidence: 99%

“…Recent works toward mid-IR imaging have extended the cut-off wavelength to 3.65 μm [149]. GHz-level GeSn-on-Si photodetectors were reported with a responsivity of 0.04 A/W at 1900 nm and a dark current density of 31 mA/cm 2 [150]. Another interesting approach makes use of midgap states in silicon through implantation-induced defects, by which 20 Gb/s at 1960 nm with a responsivity of 0.3 A/W has been achieved [151].…”

Section: Compatibility With Ultrawide-band Systemsmentioning

confidence: 99%

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Scaling capacity of fiber-optic transmission systems via silicon photonics

2020

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The tremendous growth of data traffic has spurred a rapid evolution of optical communications for a higher data transmission capacity. Next-generation fiber-optic communication systems will require dramatically increased complexity that cannot be obtained using discrete components. In this context, silicon photonics is quickly maturing. Capable of manipulating electrons and photons on the same platform, this disruptive technology promises to cram more complexity on a single chip, leading to orders-of-magnitude reduction of integrated photonic systems in size, energy, and cost. This paper provides a system perspective and reviews recent progress in silicon photonics probing all dimensions of light to scale the capacity of fiber-optic networks toward terabits-per-second per optical interface and petabits-per-second per transmission link. Firstly, we overview fundamentals and the evolving trends of silicon photonic fabrication process. Then, we focus on recent progress in silicon coherent optical transceivers. Further scaling the system capacity requires multiplexing techniques in all the dimensions of light: wavelength, polarization, and space, for which we have seen impressive demonstrations of on-chip functionalities such as polarization diversity circuits and wavelength- and space-division multiplexers. Despite these advances, large-scale silicon photonic integrated circuits incorporating a variety of active and passive functionalities still face considerable challenges, many of which will eventually be addressed as the technology continues evolving with the entire ecosystem at a fast pace.

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Section: Compatibility With Ultrawide-band Systemsmentioning

confidence: 99%

Section: Compatibility With Ultrawide-band Systemsmentioning

confidence: 99%

Scaling capacity of fiber-optic transmission systems via silicon photonics

2020

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“…Silicon (Si) photonics has been an interesting research topic in recent years due to the potential capability of monolithic integration with complementary-metal-oxide-semiconductor microelectronic circuits [ 1 , 2 , 3 ]. Photonic integrated devices are classified into different device types according to their different implementation functions, such as laser, modulator, and passive coupler [ 4 , 5 , 6 ].…”

Section: Introductionmentioning

confidence: 99%

Silicon Waveguide Integrated with Germanium Photodetector for a Photonic-Integrated FBG Interrogator

Zhang

et al. 2020

Nanomaterials

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We report a vertically coupled germanium (Ge) waveguide detector integrated on silicon-on-insulator waveguides and an optimized device structure through the analysis of the optical field distribution and absorption efficiency of the device. The photodetector we designed is manufactured by IMEC, and the tests show that the device has good performance. This study theoretically and experimentally explains the structure of Ge PIN and the effect of the photodetector (PD) waveguide parameters on the performance of the device. Simulation and optimization of waveguide detectors with different structures are carried out. The device’s structure, quantum efficiency, spectral response, response current, changes with incident light strength, and dark current of PIN-type Ge waveguide detector are calculated. The test results show that approximately 90% of the light is absorbed by a Ge waveguide with 20 μm Ge length and 500 nm Ge thickness. The quantum efficiency of the PD can reach 90.63%. Under the reverse bias of 1 V, 2 V and 3 V, the detector’s average responsiveness in C-band reached 1.02 A/W, 1.09 A/W and 1.16 A/W and the response time is 200 ns. The dark current is only 3.7 nA at the reverse bias voltage of −1 V. The proposed silicon-based Ge PIN PD is beneficial to the integration of the detector array for photonic integrated arrayed waveguide grating (AWG)-based fiber Bragg grating (FBG) interrogators.

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“…Though transmission experiments have been only demonstrated for limited distance, solid evidences have been observed for the great potential for optical interconnects [7], [8]. The communication window shifts to this waveband due to the ultra-low loss of optical fibers, the maturity of narrow linewidth lasers, thulium doped fiber amplifier with 30 THz gain bandwidth [9]- [11], high-speed photodiode [12]- [14], and modulator [15], [16]. The hollow core photonic bandgap fiber (HCPBF) is predicted to have a low latency [17] and an attenuation of only 0.1 dB/km at 2-μm wavelengths [18], which allow for a promising solution for datacenter scenario [19], [20].…”

Section: Introductionmentioning

confidence: 99%

Thermo-Optic Tunable Silicon Arrayed Waveguide Grating at 2-μm Wavelength Band

Liu

et al. 2020

IEEE Photonics J.

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The transparent window in optical fiber at 2-μm waveband enables a huge potential for fiber optical communications. Intensive efforts have been devoted to pursuit of photonic devices in this new band. The arrayed waveguide grating (AWG) is one of the key components for various functionalities like wavelength multiplexer, optical filter, spectrometer and so forth. However, the integrated and wavelength tunable AWG has not been realized in the 2-μm wavelength range yet. Here, we demonstrate an 8-channel thermo-optic tunable AWG at 2 μm via silicon photonic multi-project wafer shuttle run. The device is fully compatible with standard foundry fabrication process without customization. The TiN heater is designed for uniform waveguide heating and wavelength detuning. Experiments show that the fabricated AWG has a dense channel spacing of 1.6 nm and a minimum insertion loss of 6.1 dB. The wavelength tuning efficiency is measured to be 6.4 nm/W.

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Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth

Cited by 84 publications

References 43 publications

Scaling capacity of fiber-optic transmission systems via silicon photonics

Scaling capacity of fiber-optic transmission systems via silicon photonics

Silicon Waveguide Integrated with Germanium Photodetector for a Photonic-Integrated FBG Interrogator

Thermo-Optic Tunable Silicon Arrayed Waveguide Grating at 2-μm Wavelength Band

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