Two methods of obtaining sol–gel Nb2O5 thin films for electrochromic devices

Avellaneda, César O.; Pawlicka, Agnieszka; Aegerter, Michel A.

doi:10.1023/a:1004339723987

Cited by 53 publications

(34 citation statements)

References 13 publications

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“…There is also truncated hatch back like structure distributed in few places over the scanned area. Similar kind of mixed morphology has not been previously reported [1,[18][19][20][21][22][23], but this fibrous reticulated structure resembles with that of Romero et al, to some extent where, t is the film thickness and T is the measured transmittance. Figure 5 shows the absorption coefficient as a function of photon energy.…”

Section: Surface Morphologysupporting

confidence: 87%

Spray deposited Nb2O5 thin film electrodes for fabrication of dye sensitized solar cells

Kovendhan

Joseph

Manimuthu

et al. 2011

Trans Indian Inst Met

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Nb 2 O 5 thin film electrodes have been deposited on indium tin oxide substrates by spray pyrolysis technique. XRD analysis reveals tetragonal phase of the film. Reticulated micro-fibrous surface morphology has been observed by scanning electron microscopy and atomic force microscopy indicates closely packed crystallites. Film thickness found using a stylus profilometer is around 26 nm. Transmittance spectra show the film to be 70-80% transparent in the visible region. Direct, indirect band gap and phonon energy are also estimated. Cyclic voltammetry measurement indicate distinct anodic peak during negative potential of the scan due to Li extraction. A reversible colour change from transparent to grey has been observed. The photo-electrochemical characteristic of the dye sensitized solar cell is studied by recording the I-V characteristics of the unsealed type cell under illumination of 40 mW/cm 2 using a solar simulator.

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Section: Surface Morphologysupporting

confidence: 87%

Spray deposited Nb2O5 thin film electrodes for fabrication of dye sensitized solar cells

Kovendhan

Joseph

Manimuthu

et al. 2011

Trans Indian Inst Met

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“…These materials show reversible optical absorption in the visible range when switched electrochemically [298][299][300][301][302][303][304][305][306][307][308]. One common characteristic of electrochromic materials is that they are wide-bandgap semiconductors with a lattice structure that allows easy field-aided proton or Li ?…”

Section: Electrochromic Displaymentioning

confidence: 99%

Recent developments in TiO2 as n- and p-type transparent semiconductors: synthesis, modification, properties, and energy-related applications

2015

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TiO 2 -based thin films and nanomaterials have been fabricated via physical and solution-based techniques by various research groups around the globe. Generally, most applications of TiO 2 involve photocatalytic activity for water and air purification, self-cleaning surfaces, antibacterial activity, and superhydrophilicity. As a widebandgap semiconductor, modified TiO 2 belongs to a class of materials called transparent semiconducting oxides (TSOs), which are simultaneously optically transparent and electrically conductive. TSOs continue to be in high demand for a variety of applications ranging from transparent electronics and sensor devices to light detecting and emitting devices in telecommunications. However, reports on TiO 2 applications as an effective TSO for transparent electronics applications have been limited. In general, TiO 2 is intrinsically an n-type semiconductor but can be doped to have p-type semiconductivity. This provides a very important opportunity to fabricate all-transparent homojunction devices for light harvesting and energy storage. P-type TSOs have recently attracted tremendous interest in the field of active devices for emerging transparent electronics for potential use in ultra-violet light-based solar cells. Therefore, a detailed overview of the synthesis, band structure modification via doping, properties, and applications of modified TiO 2 as n-and p-type TSOs is warranted. This article comprehensively reviews the latest developments. The discussion includes solution-based wet chemical techniques and vacuum-based dry physical techniques fabricating TiO 2 -TSOs. The synthesis of p-TiO 2 in particular is discussed in detail as it may provide interesting breakthroughs in emerging transparent electronics applications. Also, the structural, optical, and electrical properties of TiO 2 are discussed in the context of TSO applications, specifically the defect chemistry of TiO 2 to obtain n-and p-type semiconductivity, which could provide interesting insights into the band structure engineering of TiO 2 for conductivity reversal. Applications of both nand p-type TiO 2 have been reviewed in detail in relation to thin film transparent homo/heterojunction devices, dyesensitized solar cells, electrochromic displays, and other energy-related applications.

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“…For instance, a small oxygen deficiency leads to the transition from insulating to n-type semiconducting behavior 9 . Niobium oxide films have been prepared by different methods including magnetron sputtering 15 , electrodeposition and anodization 16 , thermal oxidation 17 , sol-gel methods [18][19][20][21][22] , chemical vapor deposition (CVD) 23 or atomic layer epitaxy 24 . One-dimensional nanostructures typically exhibit enhanced charge transport properties due to their anisotropy and thus are very interesting from the device point of view.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical Energy Storage Applications of CVD Grown Niobium Oxide Thin Films

Fiz

Appel

Gutiérrez‐Pardo

et al. 2016

ACS Appl. Mater. Interfaces

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ABSTRACT:We report here on controlled synthesis, characterization and electrochemical properties of different polymorphs of niobium pentoxides grown by CVD of new single-source precursors. Nb2O5 films deposited at different temperatures showed systematic phase evolution from low-temperature tetragonal (TT-Nb2O5, T-Nb2O5) to high temperature monoclinic modifications (HNb2O5). Optimization of the precursor flux and substrate temperature enabled phase-selective growth of Nb2O5 nanorods and films on conductive mesoporous biomorphic carbon matrices (Bio-C). Nb2O5 thin films deposited on monolithic mesoporous biomorphic carbon (Bio-C) scaffolds produced composite materials integrating the high surface area and conductivity of carbonaceous matrix with the intrinsically high capacitance of nanostructured niobium oxide. Hetero-junctions in Nb2O5/BioC composites were found to be beneficial in electrochemical capacitance. Electrochemical characterization of Nb2O5/BioC composites showed that small amounts of Nb2O5 (as low as 5%) in conjunction with Bio-C resulted in a seven-fold increase in the electrode capacitance, from 15 to 104 F g -1 , making these materials ideally suited for electrochemical energy storage applications.

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Two methods of obtaining sol–gel Nb2O5 thin films for electrochromic devices

Cited by 53 publications

References 13 publications

Spray deposited Nb2O5 thin film electrodes for fabrication of dye sensitized solar cells

Spray deposited Nb2O5 thin film electrodes for fabrication of dye sensitized solar cells

Recent developments in TiO2 as n- and p-type transparent semiconductors: synthesis, modification, properties, and energy-related applications

Electrochemical Energy Storage Applications of CVD Grown Niobium Oxide Thin Films

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