Two-Light-Source Extrinsic Photoconductivity of GaAs:V

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Two-Light-Source Extrinsic Photoconductivity of GaAs:V

Abstract: Photoconductivity of n‐type GaAs:V is measured at T = 78 K using additional illumination for achieving definite population conditions. The photoconductivity spectra are decomposed into contributions which can be assigned to optical transitions due to different kinds of vanadium centres.

Cited by 2 publications

References 8 publications

Photoconductivity in bulk and epitaxial GaAs: V

Photoconductivity in bulk and epitaxial GaAs: V

Optical absorption coefficient of semiconductors in the extrinsic region obtained by photoconductivity measurements: application to SI GaAs

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