Two-dimensional triphenylamine-based polymers for ultrastable volatile memory with ultrahigh on/off ratio

Chen, Kang; Yin, Yuhang; Song, Cheng; Liu, Zhengdong; Wang, Xiaojing; Wu, Yueyue; Zhang, Houcheng; Zhao, Jianfeng; Tang, Minghua; Liu, Juqing

doi:10.1016/j.polymer.2021.124076

Cited by 11 publications

(13 citation statements)

References 39 publications

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“…2D polymers (2DPs) are proposed to address the challenge of flexible dielectrics because of their fascinating features. [10][11][12][13] (i) The network of strong covalent bonds guarantees their ultrahigh stability. 12,14 (ii) The wide selectivity of the monomers and the tunability of the structures ensure the abundance of high insulating dielectric materials.…”

Section: Introductionmentioning

confidence: 99%

An ultrastable large-area atomically flat 2D polymer dielectric for low-voltage flexible organic field-effect transistors

Wang

Yuan

et al. 2023

J. Mater. Chem. C

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Section: Introductionmentioning

confidence: 99%

An ultrastable large-area atomically flat 2D polymer dielectric for low-voltage flexible organic field-effect transistors

Wang

Yuan

et al. 2023

J. Mater. Chem. C

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“…Polymeric TAA with 10 weight% of pendant PCBM units has resulted in WORM memory devices with good on/off ratios and lower threshold voltages [20] . A 2D charge transfer polymer utilizing TAA showed DRAM characteristics with high on/off ratios and thermal stability [21] . TAA branches with trifluoromethyl‐containing phthalimide as electron acceptor units also possessed SRAM and DRAM memory characteristics with linear and hyperbranched polyimides having high threshold voltages [22] .…”

Section: Introductionmentioning

confidence: 99%

“…[20] A 2D charge transfer polymer utilizing TAA showed DRAM characteristics with high on/off ratios and thermal stability. [21] TAA branches with trifluoromethyl-containing phthalimide as electron acceptor units also possessed SRAM and DRAM memory characteristics with linear and hyperbranched polyimides having high threshold voltages. [22] Therefore, it is clear that TAAs are widely explored in the area with different acceptor groups and showed different memory characteristics.…”

Section: Introductionmentioning

confidence: 99%

Enhancing the Resistive Switching Behavior of WORM Memory Devices Using D−π−A Based Ester‐Flanked Quinolines**

Angela

Harshini

Anjali

et al. 2022

Chemistry A European J

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Donor-Acceptor systems are highly appreciated in the field of organic memory devices due to their efficient charge transport within the systems. In this work, we have designed and synthesized a DÀ πÀ A system constituting esterflanked quinolines and functionalized triarylamines (TAA) through a single-step cross-coupling reaction to fabricate memory devices via Write-Once Read-Many times (WORM) non-volatile memory. Structure-property relationships are reconnoitered for these conjugated DÀ πÀ A systems through a series of UV, fluorescence, XRD, DFT, and memory characterizations. The UV and CV data show efficient charge transfer with intramolecular charge transfer occurring at 407-417 nm and a short band gap of 2.56-2.65 eV. An enhancement in the resistive switching behavior of the memory devices is observed for the compounds with simple TAA-quinoline and tert-butylphenyl substituted TAA and fluorophenyl substituted quinoline due to balanced charge distribution in the compounds. This enhanced switching induces an on/off ratio of 10 3 by generating a highly ordered arrangement in the thin films. The HOMO, LUMO levels, and the ESP images together estimate a charge transfer and charge trapping as the plausible mechanism for the solution-processable WORM memory devices. The longer retention time (10 3 s) and lower threshold voltages (À 1.21-À 2.12 V) of the devices makes them intriguing compounds for memory applications.

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“…More importantly, PIs with the special donor-acceptor (D-A) type molecular structures exhibiting stronger intramolecular and intermolecular charge transfer (CT) effects are more promising for the flexible memory devices. [26][27][28][29] Up to now, a large number of PIs exhibit various kinds of memory properties, including the volatile memory properties (Dynamic Random-Access Memory [31] (DRAM), Static Random Access Memory [32] (SRAM)) and the non-volatile memory properties (FLASH [33] , Write Once Read Many [34] (WORM)). However, most reported PI based memory devices are rigid and non-wearable, which limits their application in flexible electronics.…”

Section: Introductionmentioning

confidence: 99%

Multifunctional Polyimides for Resistive Switching Memory Devices Based on Flexible Transparent Polyimide--AgNWs Hybrid Electrodes

Guo-shu

Zhang

She

et al. 2022

Preprint

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With the quick development of flexible memory electronics, multifunctional organic materials have been the necessary for fabricate electronics. In this work, the highly transparent and flexible electrode was successfully prepared by coating the high-performance silver nanowires (AgNWs) onto the colorless polyimide (PI) substrate. The prepared flexible PI-AgNWs electrodes exhibited a low sheet resistance of 15 Ω/sq with the high transparency of 68 % at the wavelength of 400 nm. A novel kind of polyimide TPC6FPI was successfully synthesized and characterized with excellent thermal stabilities and high glass transition temperature (T) above 250 °C. Furthermore, a kind of flexible transparent PI-AgNWs/ TPC6FPI/Al resistive memory device was prepared and exhibited excellent SRAM switching behavior with the threshold voltage of around 2.1V and the ON/OFF current ratio of ~10, which indicated that multifunctional PI-based memory device showed the potential to the wearable devices.

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Two-dimensional triphenylamine-based polymers for ultrastable volatile memory with ultrahigh on/off ratio

Cited by 11 publications

References 39 publications

An ultrastable large-area atomically flat 2D polymer dielectric for low-voltage flexible organic field-effect transistors

An ultrastable large-area atomically flat 2D polymer dielectric for low-voltage flexible organic field-effect transistors

Enhancing the Resistive Switching Behavior of WORM Memory Devices Using D−π−A Based Ester‐Flanked Quinolines**

Multifunctional Polyimides for Resistive Switching Memory Devices Based on Flexible Transparent Polyimide--AgNWs Hybrid Electrodes

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