Abstract:Two dimensional models of thermal oxidation of silicon, including those implemented using the SProcess application in the TCAD SenTaurus environment, are analyzed. A number of practically important test structures, which demonstrate the peculiarities of the modeling, are used for the numerical experiments. In the course of the analysis and numerical modeling, the most accurate model is found that closely describes various "thin" phenomena occurring in the course of thermal oxidation of nonplanar silicon surfac… Show more
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